Systems and methods are provided for improved linearity of audio amplifiers. In one example, a system includes a first current source configured to provide a first current signal having a first current source output capacitance, and a second current source configured to provide a second current signal having a second current source output capacitance, where the first and second current source output capacitances are a different value. The system further includes a first capacitor compensation device coupled to an output of the first current source configured to provide a capacitance value to compensate for the second current source output capacitance, and a second capacitor compensation device coupled to an output of the second current source configured to provide a capacitance value to compensate for the first current source output capacitance. The system further includes a plurality of switches configured to switch the first and second current signals.

A FET driving circuit includes: two inputs for inputting a DC voltage; two outputs respectively connected to gate and source electrodes of a FET; a switch; a resonant capacitance connected between both ends of the switch; and an LC resonance circuit connected between the inputs and both ends of the switch. When the two inputs are shorted, frequency characteristics of an impedance of the LC resonance circuit include, in order from a low to a high-frequency side, first to fourth resonant frequencies. The first resonant frequency is higher than a switching frequency of the switch, the second resonant frequency is around double the switching frequency, the fourth resonant frequency is around four times the switching frequency, and the impedance has local maxima at the first resonant frequency and the third resonant frequency and local minima at the second resonant frequency and the fourth resonant frequency.

An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.

Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C.sup.3MOS) logic fabricated in conventional CMOS process technology. An entire family of logic elements including inverter/buffers, level shifters, NAND, NOR, XOR gates, latches, flip-flops and the like are implemented using C.sup.3MOS techniques. Optimum balance between power consumption and speed for each circuit application is achieve by combining high speed C.sup.3MOS logic with low power conventional CMOS logic. The combined C.sup.3MOS/CMOS logic allows greater integration of circuits such as high speed transceivers used in fiber optic communication systems.

Provided is a switching device including: a cascode switch including at least two transistors connected in series and receiving a switching control signal; and a third switch receiving the switching control signal, wherein the at least two transistors include a first transistor receiving the switching control signal through a control terminal and a second transistor having a control terminal connected to a first voltage source, and wherein the third switch is connected between the control terminal and the first terminal of the second transistor, is turned off when the first transistor is turned on, and is turned on when the first transistor is turned off.

A fast shut-off solenoid circuit network includes a solenoid circuit and a current dissipation circuit. The solenoid circuit is operable in response to an electrical current, and configured to operate in an enable mode and a disable mode. The current dissipation circuit is configured to dissipate the current discharged from the solenoid circuit in response to invoking the disable mode. The fast shut-off solenoid circuit network further includes a dissipation bypass circuit. The dissipation bypass circuit is configured to divert the current discharged by the solenoid circuit away from current dissipation circuit when operating in the enable mode.

Embodiments are described for digital forward body biasing CMOS circuits. In an embodiment, a power management unit limits the amount of time for which digital forward body biasing may be implemented. In another embodiment, once a CMOS circuit is put into a full digital forward body bias mode, the CMOS circuit is gradually brought back to a zero forward body bias mode. In another embodiment, charge is shared among biased transistor wells during transition intervals when transitioning from one bias mode to another.

A FET driving circuit includes: two inputs for inputting a DC voltage; two outputs respectively connected to gate and source electrodes of a FET; a switch; a resonant capacitance connected between both ends of the switch; and an LC resonance circuit connected between the inputs and both ends of the switch. When the two inputs are shorted, frequency characteristics of an impedance of the LC resonance circuit include, in order from a low to a high-frequency side, first to fourth resonant frequencies. The first resonant frequency is higher than a switching frequency of the switch, the second resonant frequency is around double the switching frequency, the fourth resonant frequency is around four times the switching frequency, and the impedance has local maxima at the first resonant frequency and the third resonant frequency and local minima at the second resonant frequency and the fourth resonant frequency.

A FET driving circuit includes: inputs into which a DC voltage is inputted; outputs connected to gate and source electrodes of a FET; a switch; a capacitance connected across the switch; and an LC resonance circuit connected in series with the switch across the inputs. A voltage generated across the switch during switching is outputted to drive the FET. The LC resonance circuit has a first connector connected to one input and a second connector connected to the switch, and is configured with a path including an inductance and a path including an inductance and a capacitance. An impedance between the first and second connectors has two resonant frequencies. The impedance has a local maximum at the lower resonant frequency, which is higher than a switching frequency, and a local minimum at the higher resonant frequency, which is around double the switching frequency.

An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.