A method for operating an IGBT includes determining a maximum stationary reverse bias required for operation of the IGBT, determining a first removal charge, the removal of which at the gate of the IGBT causes an electric field strength that enables the IGBT to accept the maximum stationary reverse bias during stationary blocking, determining a second removal charge, the removal of which at the gate causes an electric field strength that leads to a dynamic avalanche, and, when the IGBT is switched off, removing from the gate during a charge removal duration a removal charge that is greater than the first removal charge and smaller than the second removal charge.

A switching apparatus (20) comprises first and second current paths, each current path configured to be capable of conducting an electrical current, the first current path including a first switching element (28) connected in parallel with a first passive current check element (30), the switching apparatus (20) further including a switching controller configured to selectively control the switching of the first switching element (28), wherein the switching controller is configured to selectively switch the first switching element (28) at a first intra-current path switching speed to commutate the electrical current between the first switching element (30) and the first passive current check element (32), the switching controller is configured to selectively switch the first switching element (28) at a first inter-current path switching speed to commutate the electrical current between the first and second current paths, and the first intra-current path switching speed is faster or slower than the first inter-current path switching speed.

A current generation circuit includes a metal-oxide-semiconductor (MOS) transistor having a source terminal coupled to one line of a power supply line and a ground line, a voltage generation circuit configured to generate a first voltage corresponding to a resistance value of wiring between the one line and the source terminal, and a control circuit configured to cause the MOS transistor to generate a predetermined current based on the first voltage.

A method for avoiding parasitic oscillation in a parallel semiconductor switch includes allowing only one of the plurality of power components to control a turn-on transition of the semiconductor switch and allowing only one of the plurality of power components to control a turn-off transition of the semiconductor switch, by setting unbalanced driving impedances for the plurality of power components coupled in parallel. Parasitic oscillation in a switch transition may be avoided without impedance matching, and the switch transition may provide a relatively small impact on switch characteristics.

A protective circuit for a semiconductor switch includes a clamp diode, an NPN bipolar transistor, a PNP bipolar transistor, a capacitor connected in parallel with the base-emitter path of the PNP bipolar transistor, and at least three resistors. The bipolar transistors are connected to a thyristor structure that is connected to the cathode of the clamp diode. A first resistor is connected in parallel with the base-emitter path of the NPN bipolar transistor. A first terminal of the second resistor is connected to the base of the PNP bipolar transistor. Either a third resistor is connected in parallel with the base-emitter path of the PNP bipolar transistor, or a first terminal of the third resistor is connected to the emitter of the PNP bipolar transistor and the second terminal of the third resistor is connected to the second terminal of the second resistor.

A gate drive circuit includes one output element, a constant current drive circuit, and a constant voltage drive circuit. The output element outputs a gate drive signal to a gate of a gate driven switching element. The constant current drive circuit causes the output element to output the gate drive signal with a constant current. The constant voltage drive circuit causes the output element to output the gate drive signal with a constant voltage.

A drive circuit of a power semiconductor element comprises a gate drive voltage generator to generate, based on an ON/OFF drive timing signal input to an input terminal, a gate drive voltage to be applied to a gate electrode of a switching element having the gate electrode for controlling a main current that flows between a first main electrode and a second main electrode, wherein the gate drive voltage generator includes a gate current limiting circuit in which a current limiter to limit a current and a voltage limiter to limit the magnitude of a voltage applied to both ends of the current limiter are connected in parallel.

A gate driver includes a variable strength driver circuit that provides an output signal to drive a high power device. The gate driver receives an update request from a host controller during an operating mode in which switching operations occur and updates one or more operating parameters associated with driving the high power device. The operating parameters including turn-on parameters, turn-off parameters, and soft shutdown parameters. The variable strength driver circuit uses the turn-on parameters for turn-on phases for the output signal, uses the turn-off parameters for turn-off phases for the output signal, and uses the soft shutdown parameters for soft shutdown phases for the output signal. The update request adjusts current, voltage, and/or time for one or more phases of the turn-on, turn-off and/or soft shutdown parameters.

A semiconductor switching module includes an insulated gate bipolar transistor and a unipolar switching device. The insulated gate bipolar transistor includes a first transistor cell and a supplemental cell, wherein the first transistor cell includes a first gate and a first source and wherein the supplemental cell includes a second gate and a supplemental electrode. The unipolar switching device is based on a wide bandgap material and includes a third gate and a third source. The third gate and the second gate are electrically connected with each other and are disconnected from the first gate. The first source, the supplemental cell and the third source are electrically connected with each other.

A protection circuit for a semiconductor switch has a gate that can be controlled by a gate driver. The protection circuit includes an integrator for detecting a gate charge of the gate and a comparator unit for switching off the semiconductor switch in dependence on the value of the gate charge relative to a reference charge.