A conversion circuit includes a voltage supply circuit, a storage circuit, and a gate terminal. The storage circuit includes a first terminal and a source terminal. The voltage supply circuit is configured to provide a bias voltage according to a power supply voltage. The first terminal is configured to receive a low voltage. The source terminal is configured to output a source voltage according to a storage voltage and the low voltage, wherein the storage circuit is configured to storage the storage voltage according to the bias voltage and the low voltage. The gate terminal is configured to output a gate voltage, wherein during a first period, the gate terminal is coupled to the first terminal, and the gate-source voltage can form a negative voltage.

To provide a semiconductor device signal transmission circuit for drive-control, a method of controlling a semiconductor device signal transmission circuit for drive-control, a semiconductor device, a power conversion device, and an electric system for a railway vehicle capable of preventing malfunction due to noise while speeding up or reducing loss of a switching operation. The semiconductor device signal transmission circuit for drive-control that is connected between a semiconductor device constituting an arm in a power conversion device and a drive circuit configured to drive the semiconductor device, including: an inductor; and an impedance circuit including a switch and connected in parallel with the inductor.

There is provided an AC-DC converter circuit (100) for high power charging of an electrical battery. The circuit comprises an input rectifier comprising a first node and a second node. The input rectifier (110) is configured to receive an AC voltage at the first node (112) and provide a rectified voltage at the second node (114). The circuit further comprises a first transistor (120), comprising a first gate node (122), a first source node (124), and a first drain node (126). The first drain node is connected to the second node of the input rectifier. The first gate node is connected to a ground node (170). The circuit further comprises a second transistor (130), comprising a second gate node (132), a second source node (134), and a second drain node (136). The second drain node is connected to the first source node. The second transistor materially corresponds to the first transistor. The circuit further comprises a duty cycle control unit (140) connected to the second gate node for providing the second transistor with a switching waveform. The circuit further comprises an output rectifier (150) connected to the second source node or the first source node. The circuit further comprises an output electronic filter (160) connected to the second source node or an output node (151) of the output rectifier. An AC-DC converter device, a method for charging an electrical battery, and a regenerative braking system is also provided.

The disclosure relates to a switched capacitor converter with gate driving circuits for limiting currents provided by switching field effect transistors. Embodiments disclosed include a switched capacitor converter (100), SCC, comprising a plurality of gate driver circuits (101a-d, 200, 300) arranged to provide a gate voltage signal to a respective power FET (102a-d) in response to a respective input switching signal (sw1_in, sw2_in, sw3_in, sw4_in, IN), wherein each gate driver circuit (101a-d, 200, 300) comprises a first gate driver module (206) and a second gate driver module (207), the gate driver circuit (101a-d, 200, 300) configured to operate in: a first mode in which the first gate driver module (206) provides the gate voltage signal to a respective power FET (102a-d, 205) in response to an input switching signal (IN) at an input (203) of the first gate driver module (206) causing the gate voltage signal to switch between first and second voltage rails (201, 202) by operation of first and second switches (208, 209) connected between the pair of voltage rails (201, 202); and a second mode in which, in response to enabling of a current limit switching signal (climit_en), the first gate driver module disables switching of one of the first and second switches (208, 209) and the second gate driver module (207) operates to limit a current provided to the respective power FET (102a-d, 205).

A drive circuit of a voltage-controlled power semiconductor element, including first to fourth switching elements, first and second delay circuits, an overcurrent detection circuit, a slow shutdown detection circuit and a flip-flop. The first switching element turns on upon receiving an off signal. The second switching element is turned on by the first delayed signal generated by the first delay circuit. The third switching element turns on upon receiving a second delayed signal generated by the second delay circuit through the flip-flop. The fourth switching element is turned on by the slow shutdown detection signal generated by the slow shutdown detection circuit. The first to fourth switching elements extract electric charges from the gate terminal of the voltage-controlled power semiconductor element, with first to fourth extracting capabilities, respectively. The first and fourth extracting capabilities are larger than the third extracting capability and smaller than the second extracting capability.

A driving circuit includes a first reference terminal, a second reference terminal, at least one input terminal, an output terminal, a first transistor, a second transistor, a switch module, and at least one control signal terminal. The at least one input terminal receives at least one input signal. The output terminal outputs an output signal in response to the at least one input signal. The first transistor and the second transistor respectively include control terminals coupled to the at least one input terminal. The switch module includes at least one control terminal coupled to the at least one control signal terminal to receive at least one control signal. The at least one input signal has a transition period. The switch module can be turned off according to the at least one control signal.

A driving apparatus for driving a switching device is provided, the driving apparatus including: a high potential line; a high-potential-side switching control unit configured to perform switching as to whether to connect a control terminal of the switching device to the high potential line; a first resistor element located on a high-potential side and disposed in series with the high-potential-side switching control unit on a path from the control terminal of the switching device to the high potential line; a high-potential-side capacitor provided in parallel with the first resistor element on the path from the control terminal of the switching device to the high potential line; and a high-potential-side discharge control unit configured to control whether to discharge the high-potential-side capacitor.

A power supply device includes a transformer including a primary winding, a secondary winding and an auxiliary winding, first, second and third circuits, and a switch. The first circuit in which a first capacitor and a first rectifier are connected in series is connected to the primary winding in parallel. The switch of which one end is connected to one end of the primary winding. The second circuit in which the auxiliary winding and a second rectifier are connected in serial is connected between a connecting point, to which the first capacitor and the first rectifier are connected, and the other end of the switch. The third circuit including a resistor and a third rectifier is connected to a gate of the switch. In the third circuit, a resistance value in a direction where a current flows into the gate of the switch is smaller than that in a direction where the current flows out of the gate.

A circuit is configured to drive a switch mode regulator and to control the slew rate at a switching terminal of the regulator. The circuit includes first and second transistors coupled between a voltage supply terminal and a switching terminal, and includes third and fourth transistors coupled between the voltage supply terminal and the switching terminal. The circuit includes a fifth transistor coupled to the fourth transistor in a current mirror configuration and a sixth transistor coupled between the voltage supply terminal and the third transistor. The circuit includes a first resistor coupled between the voltage supply terminal and the fifth transistor, and includes a second resistor coupled between the sixth transistor and the second transistor.

An active gate voltage control circuit for a gate driver of a power semiconductor switching device comprising a power semiconductor transistor, such as a GaN HEMT, provides active gate voltage control comprising current burst mode operation and protection mode operation. The gate-source turn-on voltage V.sub.gs(on) is increased in burst mode operation, to allow for a temporary increase of saturation current. In protection mode operation, a multi-stage turn-off may be implemented, comprising reducing V.sub.gs(on) to implement fast soft turn-off, followed by full turn-off to bring V.sub.gs(on) below threshold voltage, to reduce switching transients such as V.sub.ds spikes. Circuits of example embodiments provide for burst mode operation for enhanced saturation current, to increase robustness of enhancement mode GaN power switching devices, e.g. under overcurrent and short circuit conditions, or to provide active gate voltage control which adjusts dynamically to specific operating conditions or events.