An apparatus comprising an insulated gate bipolar transistor; and a super-junction metal-oxide semiconductor field effect transistor wherein the insulated gate bipolar transistor wherein the super-junction metal-oxide semiconductor field effect transistor are structurally coupled and wherein the super-junction metal-oxide semiconductor field effect transistor is configured to switch to an on state from an off state and an off state from an on state.

A driving circuit includes first and second driving units connected in parallel to each other, wherein both the first and second driving units start to supply a gate current to a gate of a switching device in a turn-on operation of the switching device, when a gate voltage of the switching device increases and has reached a threshold voltage of the switching device, the first driving unit continues to supply the gate current, and the second driving unit stops supply of the gate current before the gate voltage has reached the threshold voltage.

In a gate driver, a comparator input is adapted to be coupled through a resistor and a diode to a first transistor. A latch input is coupled to a comparator output. A second transistor has a first control terminal and a first output terminal. The first output terminal is adapted to be coupled to a control terminal of the first transistor. A third transistor is smaller than the second transistor. The third transistor has a second control terminal and a second output terminal. The second output terminal is adapted to be coupled to the control terminal of the first transistor. Control logic has a logic input and first and second logic outputs. The logic input is coupled to a latch output. The first logic output is coupled to the first control terminal. The second logic output is coupled to the second control terminal.

A semiconductor module includes: a control circuit for controlling first and second transistors operating complementarily; and an internal controller receiving a data signal including a set value of an operating characteristic from an external controller to store the data signal in a memory and then transferring the set value of the operating characteristic to the control circuit. The data signal is sent to the internal controller in the order of the set value of the operating characteristic and a specific trigger value. The internal controller transfers the set value of the operating characteristic to the control circuit in timed relation to writing of the specific trigger value into the memory. The control circuit includes first and second drivers. The control circuit changes settings of the first and second drivers to thereby change the operating characteristic of the semiconductor module.

The embodiments of the present disclosure provide a heating system and a power switch device. A switch module of the heating system includes a first switch unit and a second switch unit; a control module controls that the first switch unit is switched on and the second switch unit is switched off, so that a battery pack, the first switch unit and an energy storage module form a discharge circuit, the control module controls that the first switch unit is switched off and the second switch unit is switched on, so that the energy storage module, the second switch unit and the battery pack form a charge circuit; a buffer module includes a first buffer unit and a second buffer unit.

Adaptive gate drivers and related methods and systems are disclosed. An example gate driver system includes a comparator, a latch having first and second inputs and outputs, the first input coupled to the comparator, a timer having an input and an output, the input coupled to the first output of the latch, the output coupled to the second input of the latch, control logic having an input and first and second outputs, the input coupled to the second output of the latch, first and second transistors having a gate, a first buffer having an input and an output, the input coupled to the first output of the control logic, the output coupled to the gate of the first transistor, and a second buffer having an input and an output, the input coupled to the second output of the control logic, the output coupled to the gate of the second transistor.

A 3-level T-type neutral point clamped (NPC) inverter/rectifier is disclosed in which neutral point clamping is dynamically enabled/disabled responsive to load, e.g. enabled at low load for operation in a first mode as a 3-level inverter/rectifier and disabled at high/peak load for operation in a second mode as a 2-level inverter/rectifier. When the neutral clamping leg is enabled only under low load and low current, middle switches S2 and S3 can be smaller, lower cost devices with a lower current rating. Si, SiC, GaN and hybrid implementations provide options to optimize efficiency for specific load ratios and applications. For reduced switching losses and enhanced performance of inverters based on Si-IGBT power switches, a hybrid implementation of the dual-mode T-type NPC inverter is proposed, wherein switches S1 and S4 comprise Si-IGBTs and switches S2 and S3 of the neutral clamping leg comprise GaN HEMTs. Applications include electric vehicle traction inverters.

An insulated gate device drive apparatus for driving an insulated gate device by using a charging current outputted from a totem-pole output circuit constituted by a high-side output transistor and a low-side output transistor. The insulated gate device drive apparatus includes a charging current correction circuit configured to perform correction to increase the charging current that is decreased by an increased voltage drop of high-side wiring resistance between a power supply and the high-side output transistor.

One illustrative device includes, among other things, an active device comprising a first terminal, a first bias resistor connected to the first terminal, and a first resistor comprising a first phase transition material connected in parallel with the first bias transistor, wherein the first phase transition material exhibits a first low conductivity phase for temperatures less than a first phase transition temperature and a first high conductivity phase for temperatures greater than the first phase transition temperature.

Each of a P-side IGBT and an N-side IGBT connected in series to implement an arm includes a first gate and a second gate. In each of a drive circuit unit configured to control a voltage of the first gate with respect to a collector of the P-side IGBT, a drive circuit unit configured to control a voltage of the second gate with respect to an emitter of the P-side IGBT, and a drive circuit unit configured to control a voltage of the second gate with respect to a collector of the N-side IGBT, a signal processing circuit and an output circuit are electrically isolated from each other by an isolation structure.