A sensor may include: a first plurality of resistors; a first BJT having: a first base terminal, a collector terminal, and an emitter terminal, where the collector terminal is coupled to the first plurality of resistors; and a first amplifier having a first non-inverting input coupled to the collector terminal and an output terminal coupled to the base terminal. The sensor may include: a second plurality of resistors; a second BJT having: a base terminal, a collector terminal, and an emitter terminal, where the base terminal is coupled to the base terminal of the first BJT, where the collector terminal is coupled to the second plurality of resistors; and a second amplifier having an inverting input coupled to the collector terminal and an output terminal coupled to the emitter terminal, wherein the inverting input terminal of the first amplifier is coupled to a non-inverting input terminal of the second amplifier.

An insulated gate device drive apparatus for driving an insulated gate device by using a charging current outputted from a totem-pole output circuit constituted by a high-side output transistor and a low-side output transistor. The insulated gate device drive apparatus includes a charging current correction circuit configured to perform correction to increase the charging current that is decreased by an increased voltage drop of high-side wiring resistance between a power supply and the high-side output transistor.

Techniques to generate two separate temperature independent reference voltages. The reference voltages can be generated using a chain of V.sub.BE cells. A cross-quad V.sub.BE-cell-based bandgap voltage reference can cancel out noise of associated current sources by forcing them to correlate. Several V.sub.BE stages can be cascaded together to generate an appreciable PTAT component that can cancel the CTAT component from V.sub.BE. In some example configurations, only BJTs are usedwithout requiring use of an amplifierto generate the bandgap voltages; in this way, extremely low noise voltage references can be generated. The PTAT and the CTAT voltages can be combined to generate a bandgap voltage of approximately V.sub.G0 or approximately 2V.sub.G0.

A circuit for controlling an anode-gate thyristor includes a first transistor that couples a thyristor gate to a first terminal to receive a potential lower than a potential of a second terminal connected to the thyristor anode. A control terminal of the first transistor is driven by a control signal which is positive with respect to the potential of the first terminal.

A semiconductor integrated circuit includes a reference circuit including: a first NMOS transistor and a second NMOS transistor having a gate connected in common; and a resistor having one end connected to a source of the first NMOS transistor and the other end connected to a source of the second NMOS transistor, wherein the first NMOS transistor and the second NMOS transistor are formed of floating NMOS transistors

In a method for controlling a direct current switch having first and second semiconductor switches capable of being switched off, the first and second semiconductor switches are arranged between first and second terminals to enable conduction of a current with a first polarity through the first semiconductor switch and conduction of the current with a second polarity that is opposite to the first polarity through the second semiconductor switch. One of the first and second semiconductor switches is switched off as a function of a current measurement value.

Each of a P-side IGBT and an N-side IGBT connected in series to implement an arm includes a first gate and a second gate. In each of a drive circuit unit configured to control a voltage of the first gate with respect to a collector of the P-side IGBT, a drive circuit unit configured to control a voltage of the second gate with respect to an emitter of the P-side IGBT, and a drive circuit unit configured to control a voltage of the second gate with respect to a collector of the N-side IGBT, a signal processing circuit and an output circuit are electrically isolated from each other by an isolation structure.

Techniques to generate two separate temperature independent reference voltages. The reference voltages can be generated using a chain of V.sub.BE cells. A cross-quad V.sub.BE-cell-based bandgap voltage reference can cancel out noise of associated current sources by forcing them to correlate. Several V.sub.BE stages can be cascaded together to generate an appreciable PTAT component that can cancel the CTAT component from V.sub.BE. In some example configurations, only BJTs are usedwithout requiring use of an amplifierto generate the bandgap voltages; in this way, extremely low noise voltage references can be generated. The PTAT and the CTAT voltages can be combined to generate a bandgap voltage of approximately V.sub.G0 or approximately 2V.sub.G0.

The embodiments of the present disclosure provide a heating system and a power switch device. A switch module of the heating system includes a first switch unit and a second switch unit; a control module controls that the first switch unit is switched on and the second switch unit is switched off, so that a battery pack, the first switch unit and an energy storage module form a discharge circuit, the control module controls that the first switch unit is switched off and the second switch unit is switched on, so that the energy storage module, the second switch unit and the battery pack form a charge circuit; a buffer module includes a first buffer unit and a second buffer unit.

A semiconductor module includes a high-side switching device and a low-side switching device that respectively form an upper arm and a lower arm, freewheeling diodes that are respectively connected to the switching devices in anti-parallel, and a high-side driver circuit and a low-side driver circuit that respectively switch the high-side switching device and the low-side switching device ON and OFF. In the upper arm, an anode electrode of the freewheeling diode and a reference voltage electrode of the high-side driver circuit are directly connected via a first wiring, and the anode electrode of the freewheeling diode is connected to a reference voltage electrode of the high-side switching device via a second wiring having an inductance.