According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

A device for hooking up a signal-outputting mechanism with two potential sensors each of which has allocated to it two evaluation terminals, wherein the potentials of the evaluation terminals depend inversely on the resistances between the respective evaluation terminals.

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

A driving circuit for an N-channel or NPN-type high-side transistor includes: a level shift circuit configured to level-shift an input signal; and a buffer configured to drive the N-channel or NPN-type high-side transistor according to an output of the level shift circuit, wherein the level shift circuit includes: a differential conversion circuit of an open drain type configured to convert the input signal into a differential signal; a latch circuit configured to perform a state transition with a differential output of the differential conversion circuit as a trigger; and an assist circuit configured to inject an assist current into the latch circuit in synchronization with the input signal.

A driving circuit for an N-channel or NPN-type high-side transistor includes: a level shift circuit configured to level-shift an input signal; and a buffer configured to drive the N-channel or NPN-type high-side transistor according to an output of the level shift circuit, wherein the level shift circuit includes: a differential conversion circuit of an open drain type configured to convert the input signal into a differential signal; a latch circuit configured to perform a state transition with a differential output of the differential conversion circuit as a trigger; and an assist circuit configured to inject an assist current into the latch circuit in synchronization with the input signal.

In an example, a circuit comprising a first inductor coupled between a first node and a second node, a first PMOS having a source terminal coupled to the second node and a drain terminal coupled to a third node, a second PMOS having a source terminal coupled to a ground voltage potential and a drain terminal coupled to the second node, a third PMOS having a source terminal coupled to a fourth node and a drain terminal coupled to the third node, a fourth PMOS having a source terminal coupled to the ground voltage potential and a drain terminal coupled to the fourth node, a NMOS having a source terminal coupled to the third node and a drain terminal coupled to a fifth node, a second inductor coupled between the fourth node and the fifth node, and a controller.

An electric power conversion apparatus includes at least one semiconductor module, a capacitor, a pair of positive and negative busbars and an insulator. The positive busbar includes a positive busbar base protruding from the capacitor in a Y direction and at least one positive busbar terminal extending perpendicular to an X direction. The negative busbar includes a negative busbar base protruding from the capacitor in the Y direction and at least one negative busbar terminal extending perpendicular to the X direction. The positive and negative busbar bases are arranged to have their major surfaces facing each other in a Z direction. The positive and negative busbar terminals at least partially overlap each other in the X direction with the insulator interposed therebetween. The at least one semiconductor module has a pair of positive and negative power terminals connected respectively to the positive and negative busbar terminals.

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.