A control circuit includes a bias circuit. The bias circuit is configured to provide a bias current for a functional circuit. The bias circuit includes a first bias circuit and a second bias circuit. The first bias circuit is configured to provide a first bias current, and the second bias circuit is configured to provide a second bias current. Herein, the first bias current is smaller than the second bias current, the first bias circuit is configured to be in a normally open state after being powered on, and the second bias circuit is configured to receive a bias enabling signal and provide the second bias current based on the bias enabling signal.

Laser drivers and methods are disclosed including a pulse input for receiving one or more logical pulse control signals, a delay circuit, a main pulse output, and a precharge pulse output for efficiently driving a laser with reduced time delay to desired optical output and reduced power consumption during between optical outputs.

A circuit for driving the voltage of a capacitive element between two voltage levels has at least one driver cell with a first pair of switches connected in series between a first terminal of a voltage source and the capacitive element, and a second pair of switches connected in series between a second terminal of the voltage source and the capacitive element. A plurality of non-dissipative elements may be connected in parallel or in series between the first pair of switches and the second pair of switches. Combinations of switches from the driver cells may be activated and deactivated in a defined sequence to provide step-wise transfer of energy to the capacitive element. The defined sequence may have a switching pattern with a voltage change portion arranged to cause a change in an output voltage of the capacitive element driver during application thereof on the capacitive element driver.

A method (of decoupling from voltage variations in a first voltage drop between first and second reference voltage rails) includes: electrically coupling one or more components to form a decoupling capacitance (decap) circuit; electrically coupling one or more components to form a filtered biasing circuit; and making an unswitched series electrical coupling of the decap circuit and the filtered biasing circuit between the first and second reference voltage rails.

A driver circuit includes a differential pair of transistors that amplify differential input signals and output the amplified differential input signals from signal output terminals, a current source that supplies a constant current to the differential pair of transistors, a switch that stops the current supply from the current source to the differential pair of transistors during a shutdown mode period, capacitors each having one end connected to the ground, a switch that connects the capacitor to the signal output terminal during the shutdown mode period and disconnects the capacitor from the signal output terminal during an amplification mode period, and a switch that connects the capacitor to the signal output terminal during the shutdown mode period and disconnects the capacitor from the signal output terminal during the amplification mode period.

A gate driver is configured to drive a normally-on device and a normally-off device coupled in series. The gate driver controls the normally-on device in response to a PWM signal, and to control a normally-off device to maintain ON in normal operations. If an under voltage condition of a negative power supply of a first driver used to drive the normally-on device, or a positive power supply of a second driver used to drive the normally-off device, or an input supply voltage is detected, the normally-off device is controlled to be OFF.

A power converting device includes upper-arm and lower-arm gate drive circuits which respectively drive upper-arm and lower-arm semiconductor switching elements and which respectively include upper-arm and lower-arm time point detection circuits for detecting time points at which voltages between main terminals of the upper-arm and lower-arm semiconductor switching elements have crossed respective reference voltages, and a controller including a calculator which calculates a change time point of an inverter output voltage and a PWM command pulse generator which generates, on the basis of information about the time point calculated by the calculator, a PWM command pulse to be given to the upper-arm gate drive circuit and the lower-arm gate drive circuit.

In general aspect, a module can include a substrate having a semiconductor circuit implemented thereon, and a negative power supply terminal electrically coupled with the semiconductor circuit via the substrate. The negative power supply terminal includes a connection tab arranged in a first plane. The module also includes a first positive power supply terminal electrically and a second positive power supply terminal that are coupled with the semiconductor circuit via the substrate. The first positive power supply terminal being laterally disposed from the negative power supply terminal, and including a connection tab arranged in the first plane. The second positive power supply terminal is laterally disposed from the negative power supply terminal and arranged in the first plane, such that the negative power supply terminal is disposed between the first positive power supply terminal and the second positive power supply terminal.

An electronic power device including transistors formed on a circuit assembly formed of a plurality of layers. The layers include gate drive layers, gate return layers, and power layers. A gate drive circuit is formed on the circuit assembly, and is connected to the gate and source of each of the transistors through the gate drive layers and the gate return layers. A voltage supply connection is provided to each of the plurality of transistors interleaved through the power layers. The circuit assembly includes a multilayer circuit board and/or a multilayer ceramic substrate. The ceramic substrate includes the power layers and transistors. The gate drive and return layers and gate drive circuit may be formed within the ceramic substrate or the circuit board. The ceramic substrate may be located in a modular housing. The circuit board may be outside the modular housing or inside the modular housing.

The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.