A signal processing circuit. In some embodiments, the signal processing circuit includes a first sample and hold circuit and a second sample and hold circuit. The first sample and hold circuit may include: a hold capacitor; an input switch connected between a common input node and the hold capacitor; a signal path amplifier having an input connected to the hold capacitor; and an output switch connected between an output of the signal path amplifier and a common output node. An input of a voltage feedback amplifier may be connected to the hold capacitor, and an output of the voltage feedback amplifier may be operatively coupled to an internal node of the input switch.

The control system comprises an amplifier (264; 266) designed to receive an input control signal (cmd*; cmd*), in order to amplify the input control signal (cmd*; cmd*) so as to obtain an output control signal (CMD*; CMD*) and to apply the output control signal (CMD*; CMD*) to the switch (222; 224) in order to either open or close the switch (222; 224), the amplifier (264; 266) having two, positive and negative, supply terminals intended to receive a supply voltage. It moreover comprises an inhibiting device (310; 314) for the amplifier (264; 266) designed to lower the supply voltage on receiving what is referred to as a total inhibit control (INHIB_T) so that the output control signal (CMD*; CMD*) keeps the switch (222; 224) open irrespective of the input control signal (cmd*; cmd*).

A voltage detection circuit and method for an integrated circuit, and an integrated circuit are provided. The voltage detection circuit includes: a first current source, a first branch and a second branch. A current outputted by the first current source is allocated to the first branch and the second branch. The first branch includes a first voltage control current component and a first load connected in series. The second branch includes a current signal detection component and a second load connected in series. A voltage signal to be detected is inputted to a control signal input terminal of the first voltage control current component. The current signal detection component is configured to output, in real time, a preset signal characterizing a second current flowing through the second branch, to determine change of the voltage signal to be detected based on the preset signal.

Circuits, systems, devices, and methods related to transistors with Schottky barriers are discussed herein. For example, a method of fabricating a transistor can include forming a p-well or an n-well in a substrate and forming a gate for the transistor. The method can also include doping a region within the p-well or n-well with a concentration below a threshold and forming a conductor layer on the doped region.

A power converter comprises a switch arrangement for controlling a path of current flow through an energy storage element and power commutation thereof so as to provide an output. The switch arrangement comprises at least first and second MOSFETs connected in series and a controlling circuit for determining how the first and second MOSFETs are switched. The timing of operation of the switching arrangement is used to control the output of the power converter. An adjusting circuit is used to adjust an electrical parameter of a component of the controlling circuit according to an operating condition of the power converter, thereby to control an efficiency of the power converter under different operating conditions.

A power supply system for USB Power Delivery includes a current source drive circuit to control a power FET to regulate the supply of power along a power path. The current source drive circuit includes a cascode current source and a cascode protection circuit formed by a source follower and a feedback voltage divider. The source follower can be a transistor with its gate connected to a cascode node between upper- and lower-stage transistors of the cascode current source. The divider node of the voltage divider is connected to the gate of the lower-stage transistor. The current source drive circuit can operate within the gate-source voltage specifications of 30-volt DEPMOS devices, and can provide high output impedance to the gate of power FET and a current limit circuit during current limiting operation, without requiring an extra high-voltage mask during fabrication.

In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form a half-bridge circuit and are arranged on a common foreign substrate having a common doping level. The switching circuit is configured to operate the half-bridge circuit at a voltage of at least 300 V.

In a power feeding control device, N-channel first FET and second FET are located in a current path for current flowing from a positive terminal to a negative terminal. The drain of the first FET is located downstream of the source. The drain of the second FET is located upstream of the source. The cathode of a first diode is connected to the negative terminal. A first drive circuit and a second drive circuit switch ON or OFF the first FET and the second FET by adjusting the gates of the first FET and the second FET, with respect to the cathode of the first diode.

A circuit for driving the voltage of a capacitive element between two voltage levels has at least one driver cell with a first pair of switches connected in series between a first terminal of a voltage source and the capacitive element, and a second pair of switches connected in series between a second terminal of the voltage source and the capacitive element. One or more non-dissipative elements may be connected between the common node of the first pair of switches and the common node of the second pair of switches. Combinations of switches from the driver cells may be activated and deactivated in a defined sequence to provide step-wise transfer of energy to the capacitive element. In one sequence, switches in a selected driver cell may subtract a specified voltage from an input voltage, bypass the selected driver cell, and add the specified voltage to the input voltage.

A drive device includes a driver configured to drive a high-side transistor and a low-side transistor; a first current detecting part for detecting one of an upper-side current that flows to the high-side transistor and a lower-side current that flows to the low-side transistor; a first current determining part that detects a sign of switching of a forward direction/reverse direction of the upper-side current or the lower-side current detected by the first current detecting part or the switching per se; and a slew rate adjusting part configured to control the driver such that a slew rate of the high-side transistor or the low-side transistor is adjusted according to a determination result of the first current determining part.