Embodiments of the present invention provide a switching circuit. The circuit comprises: a charging sub-circuit, which has a first input end and an output end; a switching sub-circuit, which has a first end, a second end, and a control end, wherein the control end of the switching sub-circuit is connected to the output end of the charging sub-circuit; and a function sub-circuit, which is connected to the first end or the second end of the switching sub-circuit, and has a first node, wherein an operating voltage of the first node is higher than an input voltage of an input power supply, the switching sub-circuit comprises one or more NMOS switches, and the first input end of the charging sub-circuit is connected to the first node.

According to one aspect, a transistor gate drive comprises a first input configured to be coupled to a DC voltage source, a second input configured to receive a control signal, a third input configured to couple to a ground connection, a transformer, a first switch configured to couple the first input to a first end of a primary winding of the transformer in response to receipt of the control signal, and to decouple the first input from the first end of the primary winding in response to the receipt of the control signal, a second switch configured to couple a second end of the primary winding to the third input in response to receipt of the control signal, and to decouple the second end of the primary winding from the third input in response to the receipt of the control signal.

A one-direction conduction device includes a first transistor and a driving circuit. The first transistor has a control terminal coupled to a first node, and input and output terminals respectively coupled to input and output electrode terminals of the one-direction conduction device. In the driving circuit, a switch circuit is coupled to the input electrode terminal and a second node. A second transistor has a base and a collector both coupled to a third node, and an emitter coupled to the second node. A first resistor is coupled to the third node and ground. A third transistor has a base coupled to the third node, an emitter coupled to the output electrode terminal, and a collector coupled to the first node. The second resistor is coupled between the first node and the ground. The switch circuit breaks off a reverse leakage current path of the one-direction conduction device.

A switching circuit includes: a normally-off junction field-effect GaN transistor including source, drain, and gate terminals; a drive device of one output type electrically connected to the gate terminal; a first rectifier, between the source terminal and the gate terminal, including an anode on a source terminal side and a cathode on a gate terminal side; a capacitor between a cathode side of the first rectifier and the drive device; a first resistor between the capacitor and the drive device; a second resistor, one side of the second resistor being connected to the drive device, another side of the second resistor being connected between the cathode side of the first rectifier and the capacitor; and a second rectifier including an anode on a capacitor side and a cathode on a drive device side. No resistor is provided between the cathode side of the second rectifier and the drive device.

A driver circuit drives a high voltage I/O interface using stacked low voltage devices in the pull-up and pull-down portions of the driver. The transistor closest to the PAD in the pull-up portion receives a dynamically adjusted gate bias voltage adjusted based on the value of the data supplied to the output circuit and the transistor in the pull-down portion closest to the PAD receives the same dynamically adjusted gate bias voltage. The transistors closest to the power supply nodes receive gate voltages that are level shifted from the core voltage levels of the data supplied to the output circuit. The transistors in the middle of the pull-up and pull-down transistor stacks receive respective static gate voltages. The bias voltages are selected such that the gate-drain, source-drain, and gate-source voltages of the transistors in the output circuit do not exceed the voltage tolerance levels of the low voltage devices.

An industrial control I/O module for interfacing with industrial control equipment, such as sensors and actuators, can be configured to dynamically provide differing resistances in each channel as may be required for reliably achieving particular modes of operation in the channel. Providing differing resistances in such channels flexibly allows different modes in the channel to provide universal I/O capability. Modes of operation could include, for example, digital output, digital input, analog output, analog input and the like, in the same channel, but at different times. In one aspect, a processor or voltage divider can be used to control an amplifier, with feedback, driving a transistor in a channel to dynamically adjust resistance in the channel by selectively biasing the transistor to achieve a resistance in the channel suitable for the selected mode.

The present application relates to an isolated drive circuit, of the type commonly employed as high side drivers, for providing a drive signal to a semiconductor switch. The isolated drive circuit comprises a transformer with primary and secondary windings. The circuit further comprises a primary side circuit having a plurality of switches arranged in a bridge configuration with the primary winding positioned across the output of the bridge and a secondary side circuit connected to the secondary winding of the transformer and having a drive circuit output for providing a drive signal to the semiconductor switch. The advantage of this approach is that the entire circuit can be constructed as a module for use as a single component on a circuit board without requiring additional external components.

A semiconductor device with a reduced tail current is provided. The semiconductor device includes a first junction field effect transistor. The first junction field effect transistor includes a drift layer of a first conductivity type, a first source region of the first conductivity type, a first gate region of a second conductivity type, a first drain region of the first conductivity type, a semiconductor region of the second conductivity type, and a control electrode. The first source region is provided in the semiconductor region. The control electrode is electrically connected to the semiconductor region.

This disclosure describes a charge pump circuit comprising a plurality of switches configured to control phases of the charge pump circuit for charging a first capacitor, a second capacitor and a third capacitor. The phases may include: a first phase that charges the first capacitor to a first voltage based on an input voltage; a second phase that charges the second capacitor to a second voltage based on the first voltage and the input voltage; a third phase that charges the first capacitor to a third voltage based on the input voltage; and a fourth phase that charges the third capacitor to a fourth voltage based the second voltage, the third voltage, and the input voltage. In some examples, one or more of the capacitors are charged with duty cycles that are less than 50 percent.

Proposed is a drive circuit including: a driving NMOS transistor having a source set to a reference potential and a driving PMOS transistor having a source set to a first potential, the driving NMOS transistor and the driving PMOS transistor having a mutually common drain connected to a load; a first bipolar transistor configured to control on/off of the driving PMOS transistor; a first switching element that causes conduction or non-conduction between a gate and the source of the driving NMOS transistor; and a second switching element that causes conduction or non-conduction between a gate and the source of the driving PMOS transistor.