A transistor device is provided including a first device load terminal, a second device load terminal and a device control terminal. The device includes a transistor. A first transistor load terminal is coupled to the first device load terminal, a second transistor load terminal is coupled to a second device load terminal, and a transistor control terminal is coupled to the device control terminal via a variable impedance element. An overload detection circuit switches the variable impedance element from a first state with lower impedance to a second state with higher impedance in response to detecting an overload condition.

A half-bridge control circuit comprises an input terminal, an output terminal for providing a pulsed signal to a half-bridge driver circuit configured to drive two electronic switches connected between two supply terminals, and a feedback terminal for receiving a feedback signal indicative of the instantaneous voltage value at a switching node between the two electronic switches. A selector circuit provides a digital feedback signal. A subtractor generates an error signal by subtracting the digital feedback signal from the reference signal. An integrator generates an integration signal by integrating the value of the error signal. A down-scale circuit generates a reduced resolution integration signal by discarding one or more least significant bits of the integration signal. A sampling circuit generates a sampled integration signal by sampling the reduced resolution integration signal. A pulse generator circuit generates the pulsed signal as a function of the sampled integration signal.

Apparatus and circuits including transistors with different gate stack materials and methods of fabricating the same are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a channel layer formed over the substrate; a first transistor formed over the channel layer, wherein the first transistor comprises a first source region, a first drain region, a first gate structure, and a first polarization modulation portion under the first gate structure; and a second transistor formed over the channel layer, wherein the second transistor comprises a second source region, a second drain region, a second gate structure, and a second polarization modulation portion under the second gate structure, wherein the first polarization modulation portion is made of a material different from that of the second polarization modulation portion.

An electronic system includes a reception device and a transmission device. The reception device generates reception data from transmission data input to a reception node and includes a termination circuit which is coupled to the reception node to perform an impedance matching operation. The transmission device generates a drive control signal from internal data based on a mode signal and drives the transmission data based on the drive control signal.

An electronic system includes a reception device and a transmission device. The reception device generates reception data from transmission data input to a reception node and includes a termination circuit which is coupled to the reception node to perform an impedance matching operation. The transmission device generates a drive control signal from internal data based on a mode signal and drives the transmission data based on the drive control signal.

A load drive circuit includes a power source terminal (“PST”), a power source and a load terminal connecting a load to the power source. A semiconductor switch connects the PST to the load terminal. A control circuit includes an output terminal for opening/closing the semiconductor switch. A freewheeling circuit includes a freewheeling diode and a protection switch blocks a current from the power source to the semiconductor switch when the power source is connected in a reverse manner. A first terminal connects the control circuit to a first fixed potential and a second terminal connects an anode of the freewheeling diode to a second fixed potential. A connection circuit includes a connection switch connecting the output terminal and the first terminal. The connection circuit connects the output terminal to the first terminal when a rise in a potential difference between the first terminal and the second terminal is detected.

Embodiments of the present invention provide a switching circuit. The circuit comprises: a charging sub-circuit, which has a first input end and an output end; a switching sub-circuit, which has a first end, a second end, and a control end, wherein the control end of the switching sub-circuit is connected to the output end of the charging sub-circuit; and a function sub-circuit, which is connected to the first end or the second end of the switching sub-circuit, and has a first node, wherein an operating voltage of the first node is higher than an input voltage of an input power supply, the switching sub-circuit comprises one or more NMOS switches, and the first input end of the charging sub-circuit is connected to the first node.

A high temperature (HT) gate driver for Silicon Carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) uses commercial off-the-shelf COTS discrete components, and has an integrated short-circuit or overcurrent protection circuit and under voltage lock out (UVLO) protection circuit.

A switch circuit configured to receive power from either a single power source or dual power source. The circuit includes two power input terminals and two power output terminals. For a single power source, the switch circuit may receive the single power source at either of the two power input terminals. The switch circuit provides power to a load without regard to which of the power input terminals the single power source is connected. The switch circuit shorts the power output terminals for a single power input, which provides power at both power output terminals. For a dual power source system, the switch circuit may isolate the two power output terminals so each power output terminal may operate independently without shorting. In some examples, the switch circuit may be part of a thermostat or similar HVAC system controller.

An NMOS switch driving circuit and a power supply device are provided. The NMOS switch driving circuit includes a power-supply unit, a switch unit, a power conversion unit, and a driving unit. The power-supply unit is configured to output a first voltage. The switch unit is electrically coupled between the power-supply unit and a first interface and configured to establish or disconnect an electrical coupling between the power-supply unit and the first interface. The power conversion unit includes a port coupled to the power-supply unit and another port electrically coupled to the switch unit via the driving unit. The power conversion unit is configured to convert the first voltage into a constant driving voltage and output the driving voltage to the switch unit via the driving unit to drive the switch unit to be switched on, to establish the electrical coupling between the power-supply unit and the first interface.