Patent classifications
H03K17/689
Driver and sensor circuitry for power semiconductor switches using optical power supplies
A system includes a sensor circuit configured to sense a parameter of a power system having an operating voltage greater than a voltage rating of the sensor circuit, an optical communications circuit configured to receive a sensor signal from the sensor circuit and to generate an optical communications signal therefrom, and an optical power supply circuit configured to receive an optical input, to generate electrical power from the received optical input and to supply the generated electrical power to the sensor circuit and the optical communications circuit. A driver circuit may be configured to generate a first control signal applied to a control terminal of the power semiconductor switch, and the optical power supply circuit may be configured to supply the generated electrical power to the sensor circuit, the optical communications circuit and the driver circuit.
Transferring information across a high voltage gap using capacitive coupling with dti integrated in silicon technology
A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuity that operates in a first voltage domain, a second region including second circuity that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.
TRANSFERING INFORMATIONS ACROSS A HIGH VOLTAGE GAP USING CAPACTIVE COUPLING WITH DTI INTEGRATED IN SILICON TECHNOLOGY
A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuitry that operates in a first voltage domain, a second region including second circuitry that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.
POWER SWITCH
The disclosure provides a power switch that can be switched by a logic source in an ON or an OFF state. The switch comprises a component to output an optical signal responsive to the control signal and an optical sensitive device to react to the optical signal and self-conducting JFET in cascode configuration with the optical sensitive device.
Drive circuit
A drive circuit has a control signal input for receiving a first control signal at a first circuit input, an optocoupler which is connected to the control signal input and which is adapted to generate a galvanically decoupled second control signal in accordance with the first control signal, an output circuit for controlling at least one circuit output terminal of the drive circuit in accordance with a third control signal, and an electronic control circuit comprising an energy supply, an input for receiving the second control signal, and an output for outputting the third control signal in accordance with the second control signal received at the input.
Drive circuit
A drive circuit has a control signal input for receiving a first control signal at a first circuit input, an optocoupler which is connected to the control signal input and which is adapted to generate a galvanically decoupled second control signal in accordance with the first control signal, an output circuit for controlling at least one circuit output terminal of the drive circuit in accordance with a third control signal, and an electronic control circuit comprising an energy supply, an input for receiving the second control signal, and an output for outputting the third control signal in accordance with the second control signal received at the input.
TRANSMITTING DEVICE FOR TRANSMITTING DIGITAL SIGNALS BETWEEN GALVANICALLY ISOLATED CIRCUIT PARTS, AND FIELD DEVICE HAVING A TRANSMITTING DEVICE OF THIS TYPE
Disclosed is a transmitting device comprising two galvanically isolated sub-circuits. The first sub-circuit comprises: a carrier signal source for outputting a carrier signal; a digital signal source for outputting binary signal levels; and a logic component for performing an AND operation on two input signals. The second sub-circuit comprises: a signal input; a signal output; and a first RC element, the signal input, the signal output and the RC element being connected in parallel to one another with respect to a second reference potential. A first isolating capacitor is connected between the first logic output and the signal input for galvanic isolation. A second isolating capacitor is connected between the first reference potential and the second reference potential for galvanic isolation.
TRANSFERING INFORMATIONS ACROSS A HIGH VOLTAGE GAP USING CAPACTIVE COUPLING WITH DTI INTEGRATED IN SILICON TECHNOLOGY
A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuity that operates in a first voltage domain, a second region including second circuity that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.
SWITCHABLE TERMINATION WITH MULTIPLE IMPEDANCE SELECTIONS
Multiple termination impedance values are provided in a switchable termination circuit so as to accommodate multiple transmission line characteristics. In one example, a termination matching circuit includes first and second nodes, a series interconnection of a first switch and a first impedance coupled between the first and second nodes, and another series interconnection of a second switch and a second impedance coupled between the first and second nodes. First and second control circuits respectively control the first and second switches such that a selectable impedance is provided between the first and second nodes through selective activation of the first and second switch devices by the first and second control circuits. In another example, additional nodes and resistors are provided to provide further termination impedance values.
SWITCHABLE TERMINATION WITH MULTIPLE IMPEDANCE SELECTIONS
Multiple termination impedance values are provided in a switchable termination circuit so as to accommodate multiple transmission line characteristics. In one example, a termination matching circuit includes first and second nodes, a series interconnection of a first switch and a first impedance coupled between the first and second nodes, and another series interconnection of a second switch and a second impedance coupled between the first and second nodes. First and second control circuits respectively control the first and second switches such that a selectable impedance is provided between the first and second nodes through selective activation of the first and second switch devices by the first and second control circuits. In another example, additional nodes and resistors are provided to provide further termination impedance values.