Patent classifications
H03K17/689
Systems and methods for gate driver with field-adjustable UVLO
Systems and methods for gate driver with field-adjustable undervoltage lockout (UVLO) are disclosed. A gate driver system comprises a control circuit and a driver circuit. The driver circuit incorporates a field-adjustable UVLO, a control logic, and an inverter. The level of the field-adjustable UVLO is adjustable by an external circuit, which can be a resistor based voltage divider. By setting the UVLO level externally adjustable and by moving a reference ground to the external voltage divider, the gate driver system is able to implement gate control for various load without needing extra ground pin.
Systems and methods for gate driver with field-adjustable UVLO
Systems and methods for gate driver with field-adjustable undervoltage lockout (UVLO) are disclosed. A gate driver system comprises a control circuit and a driver circuit. The driver circuit incorporates a field-adjustable UVLO, a control logic, and an inverter. The level of the field-adjustable UVLO is adjustable by an external circuit, which can be a resistor based voltage divider. By setting the UVLO level externally adjustable and by moving a reference ground to the external voltage divider, the gate driver system is able to implement gate control for various load without needing extra ground pin.
Semiconductor control device, switching device, inverter, and control system
A semiconductor control device includes a switching element including a main element, and a sense element connected in parallel with the main element; and a control circuit configured to bias a sense electrode of the sense element by a negative voltage, and to detect a leakage current of another switching element connected in series with the main element. The control circuit biases the sense electrode by the negative voltage, for example, so as to turn on the sense element, without turning on the main element.
Semiconductor control device, switching device, inverter, and control system
A semiconductor control device includes a switching element including a main element, and a sense element connected in parallel with the main element; and a control circuit configured to bias a sense electrode of the sense element by a negative voltage, and to detect a leakage current of another switching element connected in series with the main element. The control circuit biases the sense electrode by the negative voltage, for example, so as to turn on the sense element, without turning on the main element.
GALVANICALLY ISOLATED SWITCH SYSTEM
A galvanically isolated switch system and method comprising a plurality of switches having at least one terminal in series electrical connection, at least one control input electrically connected to at least one of the plurality of switches, wherein the at least one control input is isolated from direct current voltages and at least one passive component connected across the plurality of switches.
GALVANICALLY ISOLATED SWITCH SYSTEM
A galvanically isolated switch system and method comprising a plurality of switches having at least one terminal in series electrical connection, at least one control input electrically connected to at least one of the plurality of switches, wherein the at least one control input is isolated from direct current voltages and at least one passive component connected across the plurality of switches.
DRIVE CIRCUIT FOR A POWER SEMICONDUCTOR CIRCUIT
A drive circuit for a power semiconductor circuit may include input contact means for inputting a control signal, the control signal representing a switching command for the power semiconductor circuit, and also at least one output contact means, to which the power semiconductor circuit is connectable and which serves for outputting a switching signal to the power semiconductor circuit. Furthermore, the drive circuit comprises current path connection means for connecting the drive circuit to a current path to be switched by the power semiconductor circuit, and means for galvanically isolating the input contact means from the output contact means and the current path connection means. Circuit means which output a switching signal that switches on the power semiconductor circuit if a control signal representing the switch-on command for the power semiconductor circuit is input at the input contact means and also voltage is present at the current path connection means.
DRIVE CIRCUIT FOR A POWER SEMICONDUCTOR CIRCUIT
A drive circuit for a power semiconductor circuit may include input contact means for inputting a control signal, the control signal representing a switching command for the power semiconductor circuit, and also at least one output contact means, to which the power semiconductor circuit is connectable and which serves for outputting a switching signal to the power semiconductor circuit. Furthermore, the drive circuit comprises current path connection means for connecting the drive circuit to a current path to be switched by the power semiconductor circuit, and means for galvanically isolating the input contact means from the output contact means and the current path connection means. Circuit means which output a switching signal that switches on the power semiconductor circuit if a control signal representing the switch-on command for the power semiconductor circuit is input at the input contact means and also voltage is present at the current path connection means.
Floating switch for signal commutation
A solid state circuit includes a main and a floating circuit including: a first driver for generating a differential driver signal derived from a driver signal; a modulator configured for modulating a modulator signal with another signal to obtain a differential control signal; the floating circuit comprising: a floating power supply comprising at least one rectifier configured for generating a floating supply voltage (VDDF) and a floating ground voltage (VSSF) from the differential driver signal; a demodulator configured for demodulating the differential control signal and for passing the demodulated signal to an output switch; the output switch comprising a first output node and a second output node and at least one transistor configured for opening or closing an electrical path under control of the demodulated signal.
Floating switch for signal commutation
A solid state circuit includes a main and a floating circuit including: a first driver for generating a differential driver signal derived from a driver signal; a modulator configured for modulating a modulator signal with another signal to obtain a differential control signal; the floating circuit comprising: a floating power supply comprising at least one rectifier configured for generating a floating supply voltage (VDDF) and a floating ground voltage (VSSF) from the differential driver signal; a demodulator configured for demodulating the differential control signal and for passing the demodulated signal to an output switch; the output switch comprising a first output node and a second output node and at least one transistor configured for opening or closing an electrical path under control of the demodulated signal.