A subsystem interface, a semiconductor device including the subsystem interface, and a communications method of the semiconductor device are provided, the subsystem interface comprising a transmitter including a first transmission port configured to transmit a first clock signal, a second transmission port configured to transmit a first data signal, a first reception port configured to receive a first flow control signal, and a third transmission port configured to transmit a first synchronization signal, a receiver including a second reception port configured to receive a second clock signal, a third reception port configured to receive a second data signal, a fourth transmission port configured to transmit a second flow control signal, a fourth reception port configured to receive a second synchronization signal, and a control module configured to control operations of the transmitter and the receiver, including performing a transmitter hand-shake by sending a request signal from the second transmission port and receiving an acknowledgement signal to the first reception port, or performing a receiver hand-shake by receiving the request signal to the third reception port and sending the acknowledgement signal from the fourth transmission port.

A noise detection circuit includes a first transistor configured to receive a delayed version of a clock signal; a second transistor configured to receive a delayed version of a reference clock signal; and a latch circuit, coupled to the first transistor at a first node and coupled to the second transistor at a second node, and configured to latch logic states of voltage levels at the first and second nodes, respectively, based on whether a timing difference between transition edges of the clock signal and the reference clock signal exceeds a pre-defined timing offset threshold.

A signal transmission circuit is provided. A tri-state logic circuit includes an enabling terminal, an input terminal and an output terminal, and is conducted and unconducted when the enabling terminal is at a high and a low state respectively. A pull-up circuit pulls up a voltage level of the output terminal. A first and a second multiplexers respectively output an enabling signal and an output signal to the enabling terminal and the input terminal according to a first status of a selection signal and respectively output a high state signal according to a second status of the selection signal. A selection circuit generates the selection signal having the first status when the voltage level is not larger than a first threshold value, having the second status after the voltage level is larger than the first threshold value and having the first status afterwards.

An example apparatus includes a line driver and an interface circuit. The line driver has a plurality of source-series terminated (SST) driver segments including switching circuitry to selectively switch among at least three voltage-reference levels to drive an output node, common to each of the SST driver segments, in response to received digital signals by switching at a rate that is faster than a baud rate characterizing the received digital signals. The interface circuit drives a transmission link, in response to a drive signal at the output node, with an analog signal representing an oversampling of the received digital signals.

A circuit includes three PMOS transistors (PMOS) and three NMOS transistors (NMOS). The first PMOS has a source receiving a supply voltage and a gate receiving a first signal. The second PMOS has a source coupled to a drain of the first PMOS, a gate receiving a clock signal, and a drain generating a second signal. The third PMOS has a source receiving the supply voltage, and a drain coupled to the drain of the second PMOS. The first NMOS has a drain coupled to the drain of the second PMOS, and a gate coupled to a gate of the third PMOS. The second NMOS has a gate receiving the first signal, and a drain coupled to a source of the first NMOS. The third NMOS has a gate coupled to the gate of the third PMOS transistor, and a drain coupled to the drain of the third PMOS.

A noise detection circuit includes a first transistor configured to receive a delayed version of a clock signal; a second transistor configured to receive a delayed version of a reference clock signal; and a latch circuit, coupled to the first transistor at a first node and coupled to the second transistor at a second node, and configured to latch logic states of voltage levels at the first and second nodes, respectively, based on whether a timing difference between transition edges of the clock signal and the reference clock signal exceeds a pre-defined timing offset threshold.

An apparatus for generating a substantially constant DC reference voltage. The apparatus includes a reference voltage generator configured to generate a substantially constant direct current (DC) reference voltage based on a voltage on a data signal transmission line, wherein the voltage is based on a bandgap reference voltage. In one implementation, the data signal transmission line is a differential signal transmission line and the voltage is a common mode voltage. In another implementation, the data signal transmission line is an I-data signal transmission line and a Q-data signal transmission line, and the voltage is an average or weighted-average of the common mode voltages of the I- and Q-differential signals. In another implementation, the reference voltage is based on a single-ended (e.g., positive- and/or negative)-component or vice-versa of I- and Q-data signals, respectively.

Some embodiments include apparatus and methods using an input stage and an output stage of a circuit. The input stage operates to receive an input signal and a clock signal and to provide an internal signal at an internal node based at least in part on the input signal. The input signal has levels in a first voltage range. The internal signal has levels in a second voltage range greater than the first voltage range. The output stage operates to receive the internal signal, the clock signal, and an additional signal generated based on the input signal. The output stage provides an output signal based at least in part on the input signal and the additional signal. The output signal has a third voltage range greater than the first voltage range.

An apparatus is disclosed that includes a semiconductor device to control a power converter having two or more power FETs. The semiconductor device includes a gate signal generator configured to produce two or more gate signals able to drive the two or more FETs. The gate signal generator has programmable timing configuration parameters to control operation of the two or more gate signals, wherein the timing configuration parameters are digitally programmed via a memory in the semiconductor device. The memory may be implemented with fuses, other non-volatile memory or volatile memory. The parameters may be fixed or updated during a lifetime of the apparatus. A serial-to-parallel conversion may be used to input the parameters. Optimization methods may be performed to determine parameters considered to be optimal. The apparatus may also include the power converter.

An apparatus is disclosed that includes a semiconductor device to control a power converter having two or more power FETs. The semiconductor device includes a gate signal generator configured to produce two or more gate signals able to drive the two or more FETs. The gate signal generator has programmable timing configuration parameters to control operation of the two or more gate signals, wherein the timing configuration parameters are digitally programmed via a memory in the semiconductor device. The memory may be implemented with fuses, other non-volatile memory or volatile memory. The parameters may be fixed or updated during a lifetime of the apparatus. A serial-to-parallel conversion may be used to input the parameters. Optimization methods may be performed to determine parameters considered to be optimal. The apparatus may also include the power converter.