A digital-to-time converter circuit includes a scrambling and noise shaping circuit, a digital-to-analog converter (DAC), and a buffer circuit. The scrambling and noise shaping circuit includes an input and an output. The input is coupled to a delay input terminal. The scrambling and noise shaping circuit is configured to generate a residue value signal that scrambles and noise shapes a mismatch error. The DAC includes an input and an output. The input of the DAC is coupled to the output of the scrambling and noise shaping circuit. The DAC is configured to generate a residue timing signal based on the residue value signal that scrambles and noise shapes the mismatch error. The buffer circuit includes an input and an output. The input of the buffer circuit is coupled to the output of the DAC. The output of the buffer circuit is coupled to a signal output terminal.

In some examples, a level shifter circuit comprises: a first transistor pair cascoded at a first input node; a second transistor pair cascoded at a second input node, wherein the first and transistor pairs couple at a first node, a second node, a third node, and a fourth node; a third transistor pair coupled to the first transistor pair at the first and the third nodes, wherein the third transistor pair is configured to generate a first bipolar clock signal; a fourth transistor pair coupled to the second transistor pair at the second and the fourth nodes, wherein the fourth transistor pair is configured to generate a second bipolar clock signal; and a clock generation circuit coupled to the first node, the second node, the third node, and the fourth node.

An impedance matching circuit and an interface circuit are provided. The impedance matching circuit includes a reference-voltage generation circuit, a control-signal generation circuit, and a circuit subunit. The reference-voltage generation circuit generates a reference voltage. The control-signal generation circuit generates a plurality of control signals. The circuit subunit is coupled to the reference-voltage generation circuit and the control-signal generation circuit. The circuit subunit receives the reference voltage and the control signals. The circuit subunit includes a plurality of transistors. The plurality of transistors are turned on or off according to levels of the control signals, and the plurality of transistors provide an impedance which matches the impedance of a receiver when the interface circuit is powered. The reference voltage is provided to bulks of the transistors, so that the voltages of the bulks of the transistors are not equal to zero volts.

In some examples, a level shifter circuit comprises: a first transistor pair cascoded at a first input node; a second transistor pair cascoded at a second input node, wherein the first and transistor pairs couple at a first node, a second node, a third node, and a fourth node; a third transistor pair coupled to the first transistor pair at the first and the third nodes, wherein the third transistor pair is configured to generate a first bipolar clock signal; a fourth transistor pair coupled to the second transistor pair at the second and the fourth nodes, wherein the fourth transistor pair is configured to generate a second bipolar clock signal; and a clock generation circuit coupled to the first node, the second node, the third node, and the fourth node.

In some examples, a level shifter circuit comprises: a first transistor pair cascoded at a first input node; a second transistor pair cascoded at a second input node, wherein the first and transistor pairs couple at a first node, a second node, a third node, and a fourth node; a third transistor pair coupled to the first transistor pair at the first and the third nodes, wherein the third transistor pair is configured to generate a first bipolar clock signal; a fourth transistor pair coupled to the second transistor pair at the second and the fourth nodes, wherein the fourth transistor pair is configured to generate a second bipolar clock signal; and a clock generation circuit coupled to the first node, the second node, the third node, and the fourth node.

The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.

The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.

A circuit for minimizing a cross-conduction time interval includes a phase node, a high-side gate drive node, a low-side gate drive node, a high-side FET coupled to the high-side gate drive node, and a low-side FET coupled to the low-side gate drive node. A high-side adjustable delay delays a transition edge of a high-side gate drive signal. A low-side adjustable delay circuit delays a transition edge of a low-side gate drive signal. A high-side delay adjustment guidance circuit provides high-side delay adjustment guidance based on a detected body-diode conduction of the low-side FET detected during a first time period. A low-side delay adjustment guidance circuit provides low-side delay adjustment guidance based on a detected body-diode conduction of the low-side FET detected during a second time period.

An adaptive mode has been added in a common mode (CM) dimmer circuit to increase output current capability only when needed. Without having an adaptive mode in the CM dimmer, the output current drivers must operate with large quiescent current to handle a bulk current injection (BCI) event. Therefore, a CM dimmer without the adaptive mode will consume a significant amount of power even when there is no BCI event occurring. With the adaptive mode, the CM dimmer can be used effectively to suppress the BCI event, e.g., in a transformer-less physical layer (PHY) connection, while consuming minimal power during normal circuit operation.

An adaptive mode has been added in a common mode (CM) dimmer circuit to increase output current capability only when needed. Without having an adaptive mode in the CM dimmer, the output current drivers must operate with large quiescent current to handle a bulk current injection (BCI) event. Therefore, a CM dimmer without the adaptive mode will consume a significant amount of power even when there is no BCI event occurring. With the adaptive mode, the CM dimmer can be used effectively to suppress the BCI event, e.g., in a transformer-less physical layer (PHY) connection, while consuming minimal power during normal circuit operation.