A transistor device includes a substrate, a source region provided on the substrate, a drain region spaced apart from the source region in a direction parallel to a top surface of the substrate, a pair of constant current generating patterns provided in the substrate to be adjacent to the source region and the drain region, respectively, a gate electrode provided on the substrate and between the source region and the drain region, and a gate insulating film interposed between the gate electrode and the substrate, wherein, the pair of constant current generating patterns generate a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Provided are an inverter including a first source and drain, an interlayer insulating film on the first source, a second source on the interlayer insulating film, a second drain on the first drain, a first channel between the first source and drain, a second channel over the first channel between the second source and drain, a gate insulating film covering outer surfaces of the first and second channel, a part of a surface of the first source in the direction to the first drain, a part of a surface of the second source in the direction to the second drain, a part of a surface of the first drain in the direction to the first source, and a part of a surface of the second drain in the direction to the second source, and a gate electrode between the first source and drain and between the second source and drain.

Provided is a transistor including: a constant current formation layer; a channel layer provided on the constant current formation layer; a pair of source/drain regions spaced apart from each other, with the channel layer therebetween on the constant current formation layer; a gate electrode provided on the channel layer; and a gate ferroelectric film provided between the gate electrode and the channel layer.

Disclosed is an inverter which includes a first P-MOS transistor connected between a node receiving a drain voltage and a first path node and operated based on an input voltage, a first N-MOS transistor connected between the first path node and an output terminal outputting an output voltage and operated based on the drain voltage, a second P-MOS transistor connected between the output terminal and a second path node and operated based on a ground voltage, a second N-MOS transistor connected between the second path node and a node receiving the ground voltage and operated based on the input voltage, a third P-MOS transistor connected between the first path node and the second path node and operated based on the input voltage, and a third N-MOS transistor connected between the first path node and the second path node and operated based on the input voltage.

A circuit for generating a modulated signal in a transmitter of an integrated circuit is disclosed. The circuit comprises a transmitter driver circuit having a first current path for receiving a first input signal of a pair of differential input signals and a second current path for receiving a second input signal of the pair of differential input signals, the transmitter driver circuit comprising a tail current path coupled to each of the first current path and the second current path; a first current source coupled between a first reference voltage and ground, wherein a first current of the first current source is proportional to the tail current of the tail current path; a first pull-up current source coupled between the first reference voltage and a first output node of the transmitter driver circuit; and a second pull-up current source coupled between the first reference voltage and a second output node of the transmitter driver circuit. A method of generating a modulated signal in a transmitter of an integrated circuit is also disclosed.

An apparatus, including: a first multiplexer including inputs configured to receive an input data signal and a scan signal, and a select input configured to receive shift control signal; a first latch including an input coupled to an output of the first multiplexer, and a complementary (e.g., inverting) clock input configured to receive a clock signal; a second latch including an input coupled to the output of the first multiplexer, and a non-complementary clock input configured to receive the clock signal; and a second multiplexer including inputs coupled to outputs of the first and second latches, respectively, a select input configured to receive the clock signal, and an output configured to generate an output data or scan signal.

Methods, apparatus, and systems are described to perform clock gating. An example apparatus to perform clock gating includes a first transistor; a second transistor including a first terminal and a second terminal, the first terminal of the second transistor coupled to a first terminal of the first transistor, the second terminal of the second transistor coupled to a second terminal of the first transistor; an inverter including an input terminal coupled to the first terminal of the first transistor and the first terminal of the second transistor; and a tristate inverter including an input terminal and an output terminal, the input terminal of the tristate inverter coupled to an output terminal of the inverter, the output terminal of the tristate inverter coupled to the input terminal of the inverter, the first terminal of the first transistor, and the first terminal of the second transistor.

An integrated circuit for a computer may include a non-binary logic gate circuit configured to perform a logic operation that includes: at least one input terminal; an output terminal; and transistor circuitry configured to: receive, via the at least one input terminal, at least one alternating current (AC) input voltage at three input voltage levels, wherein each of the three input voltage levels corresponds to a respective one of three logic values; and generate, at the output terminal, an output voltage at one or more output voltage levels based on the at least one AC input voltage and the logic operation, wherein each of the one or more output voltage levels corresponds to a respective one of the three logic values.

A transistor device includes a substrate, a source region provided on the substrate, a drain region in the substrate, spaced apart from the source region in a direction parallel to a top surface of the substrate, a gate electrode provided on the substrate and between the source region and the drain region, a gate insulating film interposed between the gate electrode and the substrate, and a constant current generating layer extending between the source region and the drain region, in the direction parallel to the top surface of the substrate, wherein the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Embodiments herein describe single event upset (SEU) tolerant flip-flop that includes master latch circuitry, slave latch circuitry, and a tristate driver having an input coupled to an output of the master latch circuitry and an output coupled to a first data input of the slave latch circuitry, where the first tristate driver is configured to inhibit charge transfer from the first data input of the slave latch circuitry to the output of the master latch circuitry.