To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10.sup.−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

In a control circuit for a switching stage of an electronic converter, a phase detector generates a drive signal in response to a phase difference between first and second clock signals. The first and second clock signals are generated by first and second current-controlled oscillators, respectively. An operational transconductance amplifier generates first and second control currents in response to a difference between a reference and a feedback of the electronic converter, with the first and second currents applied to control the first and second current-controlled oscillators. In response to a switching clock having a first state, a switching circuit applies first and second bias currents to the control inputs of the first and second current-controlled oscillators, respectively. Conversely, in response to the switching clock having a second state, the switching circuit applies the second and first bias currents to the control inputs of the first and second current-controlled oscillators, respectively.

Various implementations described herein are directed to a device having a scan chain that receives a multi-bit input, provides a multi-bit output, and provides a multi-bit multiplexer output based on the multi-bit input and the multi-bit output. The device may have an error-bit generator that receives the multi-bit multiplexer output, receives a portion of the multi-bit input, receives a portion of the multi-bit output, and provides an error-bit output based on the multi-bit multiplexer output, the portion of the multi-bit input, and the portion of the multi-bit output.

Various implementations described herein are directed to a device having a scan chain that receives a multi-bit input, provides a multi-bit output, and provides a multi-bit multiplexer output based on the multi-bit input and the multi-bit output. The device may have an error-bit generator that receives the multi-bit multiplexer output, receives a portion of the multi-bit input, receives a portion of the multi-bit output, and provides an error-bit output based on the multi-bit multiplexer output, the portion of the multi-bit input, and the portion of the multi-bit output.

Circuits and methods that use harvested electrostatic energy from transient on-chip data are described in the Application. In one aspect, a method and inverter circuit use harvested electrostatic charge held at any electric potential higher than the common ground reference potential of CMOS circuits in a chip, to partially drive a 0.fwdarw.1 logic transition at the output of the inverter at lower energy drain from the on-chip power grid than a conventional CMOS inverter would with similar performance, slew rates at inverter input and output and with similar output driving transistor geometries.

Devices for reducing power consumption and skew for transmission of signals in a clock distribution circuit are described. A global distribution circuit is configured to divide external clock signals to generate first divided multiphase clock signals and divide one of the first divided multiphase clock signals to generate a reference clock signal. A local distribution circuit is configured to generate second divided multiphase clock signals according to a portion of the first divided multiphase clock signals and the reference clock signal.

A PUF generator includes a difference generator circuit with first and second transistors having a first predetermined VT. The difference generator circuit is configured to provide a first output signal for generating a PUF signature based on respective turn on times of the first and second transistors. An amplifier includes a plurality of transistors having a second predetermined VT. The amplifier is configured to receive the first output signal and output the PUF signature.

Circuits and methods that harvest electrostatic energy from transient on-chip data are described in the Application. In one aspect, a method and inverter circuit harvests electrostatic charge held at its output node at an electric potential comparable to the power supply voltage rail to a common grid/node as the output makes a 1.fwdarw.0 logic transition. This charge harvested at a common grid/node can be used by circuits (described in applications 63/090,169, 63/139,744) to drive 0.fwdarw.1 logic transition at their output nodes at lower energy drain from the on-chip power grid than a conventional CMOS inverter would with similar performance, slew rates at inverter input and output and with similar output driving transistor geometries.

Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., “off”), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

Systems, apparatuses, and methods for implementing a low-power single-phase logic gate latch for clock-gating are disclosed. A latch circuit includes shared clocked transistors without including clock inverters. The shared clocked transistors include a P-type clocked transistor and an N-type clocked transistor, with the clock input coupled to the gate of the P-type clocked transistor and to the gate of the N-type clocked transistor. The P-type clocked transistor is coupled between first and second transistor stacks of the latch. The N-type clocked transistor is coupled to a source gate of a first stack N-type transistor gated by a data input and to a source gate of a second stack N-type transistor gated by the inverted data input. The latch has a lower clock pin capacitance than a traditional logic gate latch while also avoiding having clock inverters which reduces dynamic power consumption.