A semiconductor device may include a division control circuit and a latch circuit. The division control circuit may be configured to divide an external clock to generate a first preliminary divided clock and a second preliminary divided clock. The division control circuit may be configured to output the first and second preliminary divided clocks or any one of the first and second preliminary divided clocks as first and second divided clocks. The latch circuit may be configured to latch an external control signal in response to the first and second divided clocks and configured to output latched signals as first and second latch control signals.

A semiconductor device may include a division control circuit and a latch circuit. The division control circuit may be configured to divide an external clock to generate a first preliminary divided clock and a second preliminary divided clock. The division control circuit may be configured to output the first and second preliminary divided clocks or any one of the first and second preliminary divided clocks as first and second divided clocks. The latch circuit may be configured to latch an external control signal in response to the first and second divided clocks and configured to output latched signals as first and second latch control signals.

A method includes providing a first clock tree including a root clock and a plurality of levels of integrated clock gates (ICGs) under the root clock. The plurality of levels of ICGs in the first clock tree is flattened to generate a second clock tree including a plurality of ICGs in a same level under the root clock. A fake module is formed to reserve a region between the root clock and the plurality of ICGs. The fake module includes the root clock as a first input, and a first plurality of outputs coupled to clock-inputs of the plurality of ICGs. A skew balancing is performed on the second clock tree using a clock tree synthesis (CTS) tool to generate a third clock tree, wherein no buffers are inserted into the fake module, and wherein buffers are inserted by the CTS tool under the plurality of ICGs.

A method includes providing a first clock tree including a root clock and a plurality of levels of integrated clock gates (ICGs) under the root clock. The plurality of levels of ICGs in the first clock tree is flattened to generate a second clock tree including a plurality of ICGs in a same level under the root clock. A fake module is formed to reserve a region between the root clock and the plurality of ICGs. The fake module includes the root clock as a first input, and a first plurality of outputs coupled to clock-inputs of the plurality of ICGs. A skew balancing is performed on the second clock tree using a clock tree synthesis (CTS) tool to generate a third clock tree, wherein no buffers are inserted into the fake module, and wherein buffers are inserted by the CTS tool under the plurality of ICGs.

A register circuit for which an initial value can be changed without using a flip-flop including both a set terminal and a reset terminal is provided. The register circuit includes an initial value wiring line, a write signal terminal, a clock signal terminal, a first flip-flop, an output control circuit, a second flip-flop, and a selector.

A register circuit for which an initial value can be changed without using a flip-flop including both a set terminal and a reset terminal is provided. The register circuit includes an initial value wiring line, a write signal terminal, a clock signal terminal, a first flip-flop, an output control circuit, a second flip-flop, and a selector.

A 3D structure, the structure including: a first stratum overlaid by a second stratum, the second stratum is less than two microns thick, where the first stratum includes an array of memory cells including at least four rows of memory cells, each of the rows is controlled by a bit-line, where the array of memory cells includes a plurality of columns of memory cells, each of the columns is controlled by a word-line, and where the second stratum includes memory control circuits directly connected to the bit-lines and the word-lines.

A 3D structure, the structure including: a first stratum overlaid by a second stratum, the second stratum is less than two microns thick, where the first stratum includes an array of memory cells including at least four rows of memory cells, each of the rows is controlled by a bit-line, where the array of memory cells includes a plurality of columns of memory cells, each of the columns is controlled by a word-line, and where the second stratum includes memory control circuits directly connected to the bit-lines and the word-lines.

Disclosed embodiments select a proper hum frequency reference by utilizing one or more functional logic circuits within a cluster. he slowest logic circuit is determined, and an instance of that logic circuit is used in timing circuitry for the cluster. Multiple logic circuits with similar characteristics are incorporated into the timing circuit. Each cluster is interconnected to a second level timing circuit. Each cluster inputs timing information into the second level timing circuit. The second level timing circuit then determines when the next cycle, or tic, of the self-generated clock starts, and the process repeats, providing a self-generated clock signal.

Disclosed embodiments select a proper hum frequency reference by utilizing one or more functional logic circuits within a cluster. he slowest logic circuit is determined, and an instance of that logic circuit is used in timing circuitry for the cluster. Multiple logic circuits with similar characteristics are incorporated into the timing circuit. Each cluster is interconnected to a second level timing circuit. Each cluster inputs timing information into the second level timing circuit. The second level timing circuit then determines when the next cycle, or tic, of the self-generated clock starts, and the process repeats, providing a self-generated clock signal.