Integrated circuits with programmable logic regions are provided. The programmable logic regions may be organized into smaller logic units sometimes referred to as a logic cell. A logic cell may include four 4-input lookup tables (LUTs) coupled to an adder carry chain. Each of the four 4-input LUTs may include two 3-input LUTs and a selector multiplexer. The carry chain may include at three or more full adder circuits. The outputs of the 3-input LUTs may be directly connected to inputs of the full adder circuits in the carry chain. By providing at least the same or more number of full adder circuits as the total number of 4-input LUTs in the logic cell, the arithmetic density of the logic is enhanced.

Integrated circuits with programmable logic regions are provided. The programmable logic regions may be organized into smaller logic units sometimes referred to as a logic cell. A logic cell may include four 4-input lookup tables (LUTs) coupled to an adder carry chain. Each of the four 4-input LUTs may include two 3-input LUTs and a selector multiplexer. The carry chain may include at three or more full adder circuits. The outputs of the 3-input LUTs may be directly connected to inputs of the full adder circuits in the carry chain. By providing at least the same or more number of full adder circuits as the total number of 4-input LUTs in the logic cell, the arithmetic density of the logic is enhanced.

System and method for training and performing operations (e.g., read and write operations) on a double buffered memory topology. In some embodiments, eight DIMMs are coupled to a single channel. The training and operations schemes are configured with timing and signaling to allow training and operations with the double buffered memory topology. In some embodiments, the double buffered memory topology includes one or more buffers on a system board (e.g., motherboard).

System and method for training and performing operations (e.g., read and write operations) on a double buffered memory topology. In some embodiments, eight DIMMs are coupled to a single channel. The training and operations schemes are configured with timing and signaling to allow training and operations with the double buffered memory topology. In some embodiments, the double buffered memory topology includes one or more buffers on a system board (e.g., motherboard).

A process and temperature variation operating condition that is globally applicable to an integrated circuit die is sensed in a core circuit region to generate a global process and temperature compensation signal. A voltage variation operating condition that is locally applicable to an input/output circuit within a peripheral circuit region of the integrated circuit die is sensed to generate a local voltage compensation signal. More specifically, the localized voltage operating condition is generated as a function of a measured difference in frequency between a first clock signal generated in the peripheral circuit region in response to a supply voltage subject to voltage variation and a second clock signal generated in the core circuit region in response to a fixed bandgap reference voltage. The operation of the input/output circuit is then altered in response to the global process and temperature compensation signal and in response to the local voltage compensation signal.

A process and temperature variation operating condition that is globally applicable to an integrated circuit die is sensed in a core circuit region to generate a global process and temperature compensation signal. A voltage variation operating condition that is locally applicable to an input/output circuit within a peripheral circuit region of the integrated circuit die is sensed to generate a local voltage compensation signal. More specifically, the localized voltage operating condition is generated as a function of a measured difference in frequency between a first clock signal generated in the peripheral circuit region in response to a supply voltage subject to voltage variation and a second clock signal generated in the core circuit region in response to a fixed bandgap reference voltage. The operation of the input/output circuit is then altered in response to the global process and temperature compensation signal and in response to the local voltage compensation signal.

System and method for training and performing operations (e.g., read and write operations) on a double buffered memory topology. In some embodiments, eight DIMMs are coupled to a single channel. The training and operations schemes are configured with timing and signaling to allow training and operations with the double buffered memory topology. In some embodiments, the double buffered memory topology includes one or more buffers on a system board (e.g., motherboard).

System and method for training and performing operations (e.g., read and write operations) on a double buffered memory topology. In some embodiments, eight DIMMs are coupled to a single channel. The training and operations schemes are configured with timing and signaling to allow training and operations with the double buffered memory topology. In some embodiments, the double buffered memory topology includes one or more buffers on a system board (e.g., motherboard).

A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.

Integrated circuits with programmable logic regions are provided. The programmable logic regions may be organized into smaller logic units sometimes referred to as a logic cell. A logic cell may include four 4-input lookup tables (LUTs) coupled to an adder carry chain. Each of the four 4-input LUTs may include two 3-input LUTs and a selector multiplexer. The carry chain may include at three or more full adder circuits. The outputs of the 3-input LUTs may be directly connected to inputs of the full adder circuits in the carry chain. By providing at least the same or more number of full adder circuits as the total number of 4-input LUTs in the logic cell, the arithmetic density of the logic is enhanced.