A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.

An IC package, comprising a substrate and two or more vertically stacked dies disposed within the substrate, wherein all the edges of the two or more dies are aligned with respect to one another, wherein at least two dies of the two or more vertically stacked dies are coupled directly to one another by at least one wire bonded to the ones of the at least two dies.

A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.

An IC package, comprising a substrate and two or more vertically stacked dies disposed within the substrate, wherein all the edges of the two or more dies are aligned with respect to one another, wherein at least two dies of the two or more vertically stacked dies are coupled directly to one another by at least one wire bonded to the ones of the at least two dies.

Disclosed are a circuit and method for implementing a switching function. In an embodiment, the circuit includes a first logic circuit, a second logic circuit, and a Correlated electron switch (CES) element. The CES element is configurable to have a non-volatile state to enable or disable an electrical connection between the first logic circuit and the second logic circuit.

A process and temperature variation operating condition that is globally applicable to an integrated circuit die is sensed in a core circuit region to generate a global process and temperature compensation signal. A voltage variation operating condition that is locally applicable to an input/output circuit within a peripheral circuit region of the integrated circuit die is sensed to generate a local voltage compensation signal. More specifically, the localized voltage operating condition is generated as a function of a measured difference in frequency between a first clock signal generated in the peripheral circuit region in response to a supply voltage subject to voltage variation and a second clock signal generated in the core circuit region in response to a fixed bandgap reference voltage. The operation of the input/output circuit is then altered in response to the global process and temperature compensation signal and in response to the local voltage compensation signal.

Systems, methods, and apparatuses relating to a configurable spatial accelerator are described. In one embodiment, a processor includes a plurality of processing elements; and an interconnect network between the plurality of processing elements to receive an input of a dataflow graph comprising a plurality of nodes, wherein the dataflow graph is to be overlaid into the interconnect network and the plurality of processing elements with each node represented as a dataflow operator in the plurality of processing elements, and the plurality of processing elements is to perform an operation when an incoming operand set arrives at the plurality of processing elements. At least one of the plurality of processing elements includes a plurality of control inputs.

Systems, methods, and apparatuses relating to a configurable spatial accelerator are described. In an embodiment, a processor includes a plurality of processing elements; and an interconnect network between the plurality of processing elements to receive an input of a dataflow graph comprising a plurality of nodes, wherein the dataflow graph is to be overlaid into the interconnect network and the plurality of processing elements with each node represented as a dataflow operator in the plurality of processing elements, and the plurality of processing elements are to perform an atomic operation when an incoming operand set arrives at the plurality of processing elements.

Systems, methods, and apparatuses relating to a configurable spatial accelerator are described. In one embodiment, a processor includes a plurality of processing elements; and an interconnect network between the plurality of processing elements to receive an input of a dataflow graph comprising a plurality of nodes, wherein the dataflow graph is to be overlaid into the interconnect network and the plurality of processing elements with each node represented as a dataflow operator in the plurality of processing elements, and the plurality of processing elements is to perform an operation when an incoming operand set arrives at the plurality of processing elements. The processor also includes a streamer element to prefetch the incoming operand set from two or more levels of a memory system.

In an example, a serial peripheral interface (SPI) flash memory controller includes a transmit first-in-first-out (FIFO) circuit and an SPI interface operable to provide an interface between the transmit FIFO and an SPI flash memory. The SPI flash memory controller further includes a random access memory (RAM) operable to store a memory interface file, an address interface of the RAM operable to receive a command from the transmit FIFO circuit, a data interface of the RAM operable to output a control word associated with the command. The SPI flash memory controller further includes state machine logic operable to set behavior of the SPI interface based on the control word output from the RAM, where the control word includes a data direction field, a data phase field, an addressing width field, an addressing phase field, and a command error field.