H03M13/098

Externalizing inter-symbol interference data in a data channel

Example systems, read channel circuits, data storage devices, and methods to use inter-symbol interference message passing (ISI-MP) data in a read channel are described. The read channel circuit includes a soft output detector, such as a soft output Viterbi algorithm (SOVA) detector, configured to determine both the first most likely and second most likely sets of symbols and output inter-symbol interference data based on the adjacent symbols and corresponding ISI in each set of symbols. The inter-symbol interference data may be used by an ISI-MP circuit configured to model ISI-MP and provide feedback to an iterative decoder during local iterations.

MEMORY DEVICE INCLUDING PARITY ERROR DETECTION CIRCUIT

A memory device including a parity check circuit and a mask circuit may be provided. The parity check circuit may perform parity check on data sampled according to a data strobe signal, which does not include a post-amble. The mask circuit may generate a parity error signal based on results of the parity check, and output the parity error signal during a time period determined according to a burst length of the data.

Memory system and operating method thereof
11265022 · 2022-03-01 · ·

A memory system includes a memory controller including: a memory core configured to store data and an error correction code corresponding to the data; a syndrome generator configured to generate a first syndrome by substituting the data and the error correction code, read from the memory core, into a first check matrix, and generate a second syndrome by substituting the data and the error correction code, read from the memory core, into a second check matrix; and an error correction unit configured to correct an error of the read data and error correction code by using the first syndrome and the second syndrome, wherein constituents having values of ‘1’ in the first check matrix have values of ‘1’ also in the second check matrix.

FLASH MEMORY APPARATUS AND STORAGE MANAGEMENT METHOD FOR FLASH MEMORY
20170317693 · 2017-11-02 ·

A flash memory storage management method includes: providing a flash memory module including single-level-cell (SLC) blocks and at least one multiple-level-cell block such as MLC block, TLC block, or QLC block; classifying data to be programmed into groups of data; respectively executing SLC programming and RAID-like error code encoding to generate corresponding parity check codes, to program the groups of data and corresponding parity check codes to the SLC blocks; when completing program of the SLC blocks, performing an internal copy to program the at least one multiple-level-cell block by sequentially reading and writing the groups of data and corresponding parity check codes from the SLC blocks to the multiple-level-cell block according to a storage order of the SLC blocks.

Intelligent controller and sensor network bus, system and method including an error avoidance and correction mechanism

A machine automation system for controlling and operating an automated machine. The system includes a controller and sensor bus including a central processing core and a multi-medium transmission intranet for implementing a dynamic burst to broadcast transmission scheme where messages are burst from nodes to the central processing core and broadcast from the central processing core to all of the nodes.

Methods and apparatuses for error correction
11243838 · 2022-02-08 · ·

Embodiments of the present invention disclose methods and apparatuses for correcting errors in data stored in a solid state device. The solid state device may have a plurality of bits stored in multi-level memory cells. The method may include identifying one or more errors in a plurality of memory cells. The method may further include converting the erroneous cells to erasures. The method may further include correcting the one or more erasures.

Systems and Methods for Data Processing With Folded Parity Sector
20170324430 · 2017-11-09 ·

An apparatus for processing data includes a decoder configured to iteratively decode codewords in a data block representing a number of user data sectors, the codewords including user data, folded parity sector data and error correction code parity bits. The folded parity sector data includes a number of parity checks, each with multiple user data bits from each of the data sectors, and with an offset between each of the user data bits from the data sectors determined at least in part by a number of folds in the data sectors. The apparatus also includes a scheduler configured to control decoding of the codewords based at least in part on the folded parity sector data.

Data storage error protection
09760436 · 2017-09-12 · ·

Apparatuses and methods for data storage error protection are described. One example apparatus for data storage error protection includes an array of memory cells arranged in a first dimension and a second dimension. A controller is configured to determine a set of symbols corresponding to data stored in the memory cells. The controller is configured to add subsets of the set of symbols obliquely oriented to the first dimension and the second dimension to determine a number of parity check symbols. The controller is configured to use a same number of parity check symbols for protection of a first subset of memory cells oriented parallel to the first dimension as used for protection of a second subset of memory cells oriented parallel to the second dimension.

Managing defective bitline locations in a bit flipping decoder

Methods, systems, and apparatuses include receiving a codeword stored in a memory device. The codeword has bits from defective bit locations and non-defective bit locations. A syndrome of a current copy of the codeword is determined. Channel information for non-defective bit locations is determined using the current copy of the codeword and the received codeword from the memory device. Energy function values are determined for bits of the codeword using the syndrome of the current copy. Determining the energy function values includes using the channel information for bits in non-defective bit locations and omitting channel information for bits in defective bit locations. One or more bits of the codeword are flipped in response to the energy function values for the one or more bits satisfying a bit flipping criterion. A corrected codeword that results from the flipping of the bits is returned.

Two-Layer Code with Low Parity Cost for Memory Sub-Systems
20210407612 · 2021-12-30 ·

A memory sub-system configured to encode data using an error correcting code and an erasure code for storing data into memory cells and to decode data retrieved from the memory cells. For example, the data units of a predetermined size are separately encoded using the error correcting code (e.g., a low-density parity-check (LDPC) code) to generate parity data of a first layer. Symbols within the data units are cross encoded using the erasure code. Parity symbols of a second layer are calculated according to the erasure code. A collection of parity symbols having a total size equal to the predetermined size can be further encoded using the error correcting code to generate parity data for the parity symbols.