An imaging pixel may be operated in either a linear mode or a logarithmic mode. In the logarithmic mode, the voltage at a floating diffusion region may be proportional to the logarithm of the intensity of incident light. In order to enable correlated double sampling (CDS) in the logarithmic mode, a transistor may be provided that couples the photodiode to a bias voltage. When the transistor is turned off, the photodiode may be able to operate in a logarithmic mode. When the transistor is turned on, the floating diffusion region may be reset to a baseline voltage level. Images from the linear mode and the logarithmic mode may be combined to form high dynamic range images with flicker mitigation.

In dynamic vision sensor (DVS) or change detection sensors, the chip or sensor is configured to control or modulate the event rate. For example, this control can be used to keep the event rate close to a desired rate or within desired bounds. Adapting the configuration of the sensor to the scene by changing the ON-event and/or the OFF-event thresholds, allows having necessary amount of data, but not much more than necessary, such that the overall system gets as much information about its state as possible.

A current-voltage converter, comprising an operational amplifier having an input terminal and an output terminal, a first resistor portion connected to the input terminal, and a second resistor portion provided between the input and output terminals, the input terminal and the first and second resistor portions being connected to each other, the first resistor portion being connected to a current source on a side opposite to the input terminal, the second resistor portion including a diode, the first resistor portion having a first resistance value when a current of a first current amount is supplied to the first resistor portion, and having a second resistance value smaller than the first resistance value when a current of a second current amount larger than the first current amount is supplied to the first resistor portion.

An apparatus for increasing readout speed for Complimentary Metal Oxide Semiconductor (CMOS) image sensors. The apparatus is useful with CMOS image sensors in all high-tech industries and used to capture images digitally. Specifically, the apparatus provides a CMOS image sensor which employs an analog network-on-chip for increasing readout speed. The apparatus includes an array of carrier signal generators which are used to modulate the pixel exposure to allow all pixels to be read and discerned simultaneously.

In one example, an apparatus is provided. The apparatus comprises an image sensor configured to generate a first raw output to represent a first intensity of incident light based on a first relationship, and to generate a second raw output to represent a second intensity of incident light based on a second relationship. The apparatus further comprises a post processor configured to: generate a first post-processed output based on the first raw output and based on the first relationship such that the first post-processed output is linearly related to the first intensity based on a third relationship, and to generate a second post-processed output based on the second raw output and based on the second relationship such that the second post-processed output is linearly related to the second intensity based on the third relationship.

[Object] To execute online calibration without using a light source. [Solution] An image sensor includes: a pixel array portion in which a plurality of pixels are disposed and which generates a pixel signal; a reference signal generation unit configured to generate a reference signal for calibration; an analog digital (AD) conversion unit configured to execute AD conversion on the pixel signal and the reference signal to generate pixel data and reference data; and a correction processing unit configured to correct the pixel data on a basis of the reference data. The present technology can be applied to, for example, an image sensor performing online calibration.

In an image sensor, some pixels in an array contain a sampling circuit to sample the light intensity and a capacitor to store an analog value representing the intensity at that pixel. Alternatively, a group of pixel circuits will be equipped with such sampling and capacitor circuits. This allows simple redundancy-reducing computations with a relatively simple pixel architecture.

Various implementations disclosed herein include devices, systems, and methods implemented by an electronic device with an imaging sensor including a plurality of pixels (e.g., a matrix of pixels) that each are capable of detecting illumination intensity or contrast change using at least one shared photosensor. In some implementations, the imaging sensor is capable of operating in a first illumination intensity detecting mode (e.g., in a frame-based camera mode) or in a second contrast change detecting mode (e.g., in an event camera mode). In some implementations, the first illumination intensity detecting mode and the second contrast change detecting mode are mutually exclusive. In some implementations, pixels at an imaging sensor include two transfer transistors (e.g., gates) where a first transfer transistor allows intensity detection, and a second transfer transistor allows contrast change detection.

An imaging device including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer; a voltage supply circuit that applies a bias voltage between the first electrode and the second electrode; an amplifier transistor including a gate electrically connected to the second electrode, the amplifier transistor being configured to output a signal that corresponds to a potential of the gate; and a detection circuit that is configured to detect a level of the signal from the amplifier transistor. The voltage supply circuit applies the bias voltage in a first voltage range, in a case where the level detected by the detection circuit is less than a first threshold value, and applies the bias voltage in a second voltage range that is greater than the first voltage range, in a case where the level detected by the detection circuit is greater than a second threshold value.

A delta image sensor comprising a plurality of acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes at least one sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor; at least one single slope analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal, wherein the A/D circuit (12) is configured to use one of a plurality of ramps for the conversion; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output, in response to the changed level.