The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.

An imaging system includes a light sensor, a pulse detection imaging (PDI) circuit, and an image processing unit. The light sensor generates one or both of an image signal and a pulse signal. The pulse PDI circuit includes a first terminal in signal communication with the light sensor to receive one or both of the image signal and the pulse signal and a second terminal in signal communication with a voltage source. The image processing unit is in signal communication with the PDI circuit to receive one or both of the image signal and the pulse signal and to simultaneously perform imagery and pulse detection based on the image signal and the pulse signal, respectively.

An image sensor for detecting time-dependent image data, comprising multiple photovoltaic converters and multiple electronic converters arranged in arrays and linked by switching elements. Each of the photovoltaic converters and one of the electronic converters form a pair that generates digital information dependent on light intensity on the photovoltaic converter. The switching elements are arranged to selectively connect at least two of the photovoltaic converters to one of the electronic converters and at least two of the electronic converters to one of the photovoltaic converters.

A dynamic vision sensor (DVS) or change detection sensor reacts to changes in light intensity and in this way monitors how a scene changes. This disclosure covers both single pixel and array architectures. The DVS may contain one pixel or 2-dimensional or 1-dimensional array of pixels. The change of intensities registered by pixels are compared, and pixel addresses where the change is positive or negative are recorded and processed. Analyzing frames based on just three values for pixels, increase, decrease or unchanged, the proposed DVS can process visual information much faster than traditional computer vision systems, which correlate multi-bit color or gray level pixel values between successive frames.

An event sensor including a pixel array and configured to produce a signal stream comprising event data in reaction to light incident on the pixel array. The event sensor includes: for each pixel of the pixel array a photovoltaic converter and an electronic converter connected to the photovoltaic converter. The photovoltaic converter and the electronic converter are configured to produce and store a digital current pixel value, which is dependent on the intensity of light incident on the photovoltaic converter; for each pixel of the pixel array a corresponding multi-bit digital storage configured to store a previous pixel value; and a readout processor connected to the electronic converter and the multi-bit digital storage and configured to generate a pixel event value of the event data based on a pixel subtraction result of subtracting the previous pixel value from the current pixel value.

In dynamic vision sensor (DVS) or change detection sensors, the chip or sensor is configured to control or modulate the event rate. For example, this control can be used to keep the event rate close to a desired rate or within desired bounds. Adapting the configuration of the sensor to the scene by changing the ON-event and/or the OFF-event thresholds, allows having necessary amount of data, but not much more than necessary, such that the overall system gets as much information about its state as possible.

The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. A digital representation may be externally written to the digital storage circuit of the at least one pixel.

A delta image sensor comprising an arrangement of pixels and acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes a sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; a digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and a digital output circuit configured to generate an event output when the level has changed. The repeat rate of the analogue to digital conversion is chosen from one or more repeat rates corresponding to modulation of the light signal.

An imaging device including a pixel that includes: a photoelectric converter that converts light into a charge; a charge accumulation region to which the charge is input; and an amplifier transistor that includes a gate electrically connected to the charge accumulation region. The amplifier transistor being configured to output a signal that corresponds to a potential of the charge accumulation region. The imaging device further including a detection circuit that is configured to detect a level of the signal from the amplifier transistor, wherein a sensitivity of the pixel is caused to be increased, in a case where the level detected by the detection circuit is greater than a first threshold value.

The present technology relates to a solid-state imaging device, a driving method, and an electronic device that are able to enhance a gray scale of a combined pixel value obtained from a pixel including a plurality of photoelectric conversion units having different light receiving sensitivities. In a pixel array unit, a pixel including a plurality of photoelectric conversion units having different light receiving sensitivities is disposed. An analog to digital (AD) conversion unit that compares an electric signal corresponding to a charge of the photoelectric conversion unit having a low light receiving sensitivity among the plurality of photoelectric conversion units included in the pixel of the pixel array unit with a nonlinear reference signal that changes nonlinearly to perform AD conversion on the electric signal. The present technology is able to be applied to, for example, a complementary metal-oxide semiconductor (CMOS) image sensor.