In one example, an apparatus comprises: multiple distinct sets of photodiodes, wherein each set of photodiodes includes one or more photodiodes, one or more charge sensing units, and a controller. The controller is configured to: transfer charge generated by the one or more photodiodes in response to a different component of incident light to the one or more charge sensing units in order to convert the charge to voltages; perform one or more quantization processes of a plurality of quantization processes corresponding to a plurality of intensity ranges, wherein the one or more quantization processes quantizes the voltages from the one or more charge sensing units to digital values representing components of a pixel of different wavelength ranges; and generate a pixel value based on the at least some of the digital values.

A pixel structure and a method of reading charges generated by a radiation sensing element upon exposure thereof to radiation is presented. The pixel structure comprises at least two capacitors configured for integrating charge from a radiation sensing element, where an overflow transistor sets a predetermined threshold level by a static voltage on its control electrode. This allows charges generated in the radiation sensing element to be integrated in either the first capacitor for a level of charge generated by the radiation sensing element, while the level remains under a predetermined threshold level, or in the at least one further capacitor for a level of charge generated by the radiation sensing element when said level surpasses said predetermined threshold level. At least one merge switch is used for merging the charges of the first capacitor with the charges of the at least one further capacitor.

An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a coupled-gates structure coupling a photodiode at one input terminal to a capacitor at a first output terminal and to a floating diffusion region at a second output terminal. The coupled-gates structure may include a first transistor that sets a potential barrier defining overflow portions of the photodiode-generated charge. Second and third transistors in the coupled-gates structure may be modulated to transfer the overflow charge to the capacitor and to the floating diffusion region at suitable times. The second and third transistors may form a conductive path between the capacitor and the floating diffusion region for a low conversion gain mode of operation.

In an embodiment, a method of reducing resistance-capacitance delay along photodiode transfer lines of an image sensor includes forking a plurality of photodiode transfer lines each into a plurality of sublines coupled together and to a first decoder-driver at a first end of each subline; and distributing selection transistors of a plurality of multiple-photodiode cells among the plurality of sublines. In embodiments, the sublines may be recombined at a second end of the sublines and driven by a second decoder-driver at the second end.

An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a coupled-gates structure coupling a photodiode at one input terminal to a capacitor at a first output terminal and to a floating diffusion region at a second output terminal. The coupled-gates structure may include a first transistor that sets a potential barrier defining overflow portions of the photodiode-generated charge. Second and third transistors in the coupled-gates structure may be modulated to transfer the overflow charge to the capacitor and to the floating diffusion region at suitable times. The second and third transistors may form a conductive path between the capacitor and the floating diffusion region for a low conversion gain mode of operation.

In one example, an apparatus comprises: a plurality of photodiodes, one or more charge sensing units, one or more analog-to-digital converters (ADCs), and a controller. The controller is configured to: enable the each photodiode to generate charge in response to a different component of the incident light; transfer the charge from the plurality of photodiodes to the one or more charge sensing units to convert to voltages; receive a selection of one or more quantization processes of a plurality of quantization processes corresponding to a plurality of intensity ranges; based on the selection, control the one or more ADCs to perform the selected one or more quantization processes to quantize the voltages from the one or more charge sensing units to digital values representing components of a pixel of different wavelength ranges; and generate a pixel value based on the digital values.

An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a coupled-gates structure coupling a photodiode at one input terminal to a capacitor at a first output terminal and to a floating diffusion region at a second output terminal. The coupled-gates structure may include a first transistor that sets a potential barrier defining overflow portions of the photodiode-generated charge. Second and third transistors in the coupled-gates structure may be modulated to transfer the overflow charge to the capacitor and to the floating diffusion region at suitable times. The second and third transistors may form a conductive path between the capacitor and the floating diffusion region for a low conversion gain mode of operation.

An image sensor semiconductor device includes a first photodiode disposed in a semiconductor substrate and configured to generate charges in response to radiation, a first transistor disposed adjacent to the first photodiode, a floating diffusion region configured to store the generated charges, a reset transistor configured to reset the floating diffusion region, and a second transistor disposed over the substrate between the first photodiode and the reset transistor. The first transistor and the second transistor are configured to generate a first electric field and a second electric field, respectively, to move the charges generated by the first photodiode to the floating diffusion region.

An image sensor semiconductor device includes a semiconductor substrate and a first photodiode disposed in the semiconductor substrate and configured to generate charges in response to radiation. The image sensor semiconductor device also includes a first transistor disposed adjacent to the first photodiode, and a second transistor disposed over the first photodiode, wherein the first transistor and the second transistor are configured to generate at least one electric field to move the charges generated by the first photodiode. The image sensor device further includes a floating diffusion region configured to store the moved charges.

An apparatus for taking moving pictures, a method for taking moving pictures, and a novel pixel sensor array are disclosed. The apparatus includes a rectangular imaging array, a plurality of column processing circuits, and a controller. The rectangular imaging array is characterized by a plurality of rows and columns of UHDR pixel sensors and a plurality of readout lines, and a plurality of row select lines. Each column processing circuit is connected to a corresponding one of the plurality of readout lines. The controller causes the rectangular imaging array to measure a plurality of images of a scene that is illuminated by a pulsating light source characterized by an illumination period and a dark period. Each of the images is generated in a frame period which includes an exposure period and a dead period, the dead period being less than the dark period.