Imaging apparatus (1300, 1400, 1500) includes a semiconductor substrate (1302), which includes at least first and second sensing areas (1306, 1308, 1502, 1514) with a predefined separation between the sensing areas. First and second arrays of pixel circuits (1312) are formed respectively on the first and second sensing areas and define respective first and second matrices of pixels. First and second photosensitive films (1314, 1316, 1402) are disposed respectively over the first and second arrays of pixel circuits, and are configured to output photocharge to the pixel circuits in response to radiation incident on the apparatus in different, respective first and second spectral bands.

A photoelectric conversion apparatus including pixels is provided. Each pixels comprises a photoelectric converter, a floating diffusion, a transfer transistor between the photoelectric converter and the floating diffusion, a reset transistor resetting the floating diffusion, and an amplification transistor outputting a signal from the pixel to a signal line. An accumulation period includes, sequentially, a first period supplying a first voltage to a gate of the reset transistor, a second period supplying a second voltage to the gate, and a third period supplying a third voltage to set the reset transistor to the OFF to the gate. The first voltage is a voltage that falls between the second voltage and the third voltage, the second period is started before the signal is output, and the second period is longer than the third period.

In an embodiment, a method of reducing resistance-capacitance delay along photodiode transfer lines of an image sensor includes forking a plurality of photodiode transfer lines each into a plurality of sublines coupled together and to a first decoder-driver at a first end of each subline; and distributing selection transistors of a plurality of multiple-photodiode cells among the plurality of sublines. In embodiments, the sublines may be recombined at a second end of the sublines and driven by a second decoder-driver at the second end.

Methods and systems for light sensing are provided. In one example, an apparatus comprises and an array of pixel cells and a controller. Each pixel cell of the array of pixel cells includes a photodiode configured to generate charges upon receiving incident light and a capacitor configured to accumulate the charges generated by the photodiode. The controller is configured to: start an exposure period to accumulate the charges at the pixel cells; and based on a determination that the quantity of charges accumulated by the at least one pixel cell exceeds a pre-determined threshold: end the exposure period to cause the capacitors of the array of pixel cells to stop accumulating the charges, generate an output pixel value for each pixel cell based on the charges accumulated at the capacitor of the each pixel cell within the exposure period; and provide the output pixel values to generate an image frame.

According to an aspect of the present invention, provided is a solid state imaging device including a plurality of pixels, and each of the pixels has a charge accumulation region of a first conductivity type that accumulates signal charges corresponding to an incident light, a drain region of the first conductivity type to which a predetermined voltage is applied, a drain gate located between the drain region and the charge accumulation region in a planar view, and a semiconductor region of the first conductivity type connected to the charge accumulation region and the drain region.

The present disclosure relates to a solid-state image capture element, a driving method, and an electronic device which are enabled to capture a high-quality image. In the solid-state image capture element, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential. The present technology can be applied to a CMOS image sensor which performs imaging by, for example, a global shutter method.

An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.

Imaging apparatus (100, 200, 1200) includes a semiconductor substrate (312) and an array (202) of pixel circuits (1202, 1204), which are arranged in a matrix on the semiconductor substrate and define respective pixels (212) of the apparatus. Pixel electrodes (1208) are respectively coupled to the pixel circuits, and a photosensitive (1206) is formed over the pixel electrodes. A common electrode (1207), which is at least partially transparent, is formed over the photosensitive film. An opaque metallization layer (1214) is formed over the photosensitive film on one or more of the pixels and coupled in ohmic contact to the common electrode. Control circuitry (208, 1212) is coupled to apply a bias to the common electrode via the opaque metallization layer while correcting a black level of the output values from the pixels using the signals received from the one or more of the pixels over which the opaque metallization layer is formed.

In one example, an apparatus comprises: a photodiode configured to generate charge in response to incident light within an exposure period; and a quantizer configured to perform at least one of a first quantization operation to generate a first digital output or a second quantization to generate a second digital output, and output, based on a range of an intensity of the incident light, one of the first digital output or the second digital output to represent the intensity of the incident light. The first quantization operation comprises quantizing at least a first part of the charge during the exposure period to generate the first digital output. The second quantization operation comprises quantizing at least a second part of the charge after the exposure period to generate the second digital output.

An image sensor is provided. In one aspect, the image sensor includes a pixel coupled to an output line. The pixel includes a photodiode configured to generate electrical charges in response to light and a supply circuit configured to supply a voltage to the photodiode to keep a voltage of the photodiode at or above a threshold level in an integration time. In another aspect, the pixel includes a supply circuit configured to selectively supply voltage to the photodiode in a first charge holding capacity and a second charge holding capacity.