A photoelectric conversion device includes a pixel unit having pixels arranged to form rows and columns, each including a transfer transistor that transfers charge in a photoelectric converter to an output unit, and a pixel control unit that controls the pixels. The pixel control unit is configured to supply a control signal in accordance with an exposure period individually defined for pixel blocks of the pixel unit to pixels of each pixel block and read out, from each pixel, a first signal obtained when the photoelectric converter is in a reset state and a second signal based on charge accumulated in the photoelectric converter during the exposure period. A period excluding both the exposure period and a readout period of the second signal corresponds to a reset period of the photoelectric converter. The transfer transistor is off in a readout period of the first and second signals.

Two separate schemes are used for detecting light intensity in low light conditions and high light conditions. In high light conditions, two threshold voltages are set and the time between the crossing of a sensor voltage at the two threshold voltages is measured to determine the light intensity in the high light conditions. In low light conditions, a comparator is used to compare the voltage level of the sensor voltage relative to a reference voltage that increase over time. The time when the reference voltage reaches the sensor voltage level is detected to determine the light intensity in the low light conditions.

In one example, an apparatus comprises: a plurality of photodiodes, one or more charge sensing units, one or more analog-to-digital converters (ADCs), and a controller. The controller is configured to: enable the each photodiode to generate charge in response to a different component of the incident light; transfer the charge from the plurality of photodiodes to the one or more charge sensing units to convert to voltages; receive a selection of one or more quantization processes of a plurality of quantization processes corresponding to a plurality of intensity ranges; based on the selection, control the one or more ADCs to perform the selected one or more quantization processes to quantize the voltages from the one or more charge sensing units to digital values representing components of a pixel of different wavelength ranges; and generate a pixel value based on the digital values.

In one example, an apparatus comprises: a photodiode configured to generate charge in response to incident light within an exposure period; and a quantizer configured to perform at least one of a first quantization operation to generate a first digital output or a second quantization to generate a second digital output, and output, based on a range of an intensity of the incident light, one of the first digital output or the second digital output to represent the intensity of the incident light. The first quantization operation comprises quantizing at least a first part of the charge during the exposure period to generate the first digital output. The second quantization operation comprises quantizing at least a second part of the charge after the exposure period to generate the second digital output.

The present disclosure relates to a solid-state image capture element, a driving method, and an electronic device which are enabled to capture a high-quality image. In the solid-state image capture element, at least two or more of the discharge driving units are arranged in series between the photoelectric conversion unit and the discharge unit. During capturing of a still image, when a reset operation of the photoelectric conversion unit is performed in starting exposure of the pixel, driving is performed such that after potentials of all the discharge driving units arranged in series are reduced and the charge remaining in the photoelectric conversion unit is discharged to the discharge unit, the potential of the discharge driving unit on the photoelectric conversion unit side is returned to an original potential first, and then the potential of another discharge driving unit is returned to an original potential. The present technology can be applied to a CMOS image sensor which performs imaging by, for example, a global shutter method.

An imaging apparatus with logarithmic characteristics includes: a photodiode that receives light; a well tap unit that fixes the potential of an N-type region of the photodiode; and a resetting unit that resets the photodiode, a P-type region of the photodiode outputting a voltage signal equivalent to a photocurrent subjected to logarithmic compression. The first potential to be supplied to the well tap unit is made lower than the second potential to be supplied to the resetting unit, so that the capacitance formed with the PN junction of the photodiode is charged when the resetting unit performs a reset operation. The present technology can be applied to unit pixels having logarithmic characteristics.

Methods and systems for light sensing are provided. In one example, an apparatus comprises and an array of pixel cells and a controller. Each pixel cell of the array of pixel cells includes a photodiode configured to generate charges upon receiving incident light and a capacitor configured to accumulate the charges generated by the photodiode. The controller is configured to: start an exposure period to accumulate the charges at the pixel cells; and based on a determination that the quantity of charges accumulated by the at least one pixel cell exceeds a pre-determined threshold: end the exposure period to cause the capacitors of the array of pixel cells to stop accumulating the charges, generate an output pixel value for each pixel cell based on the charges accumulated at the capacitor of the each pixel cell within the exposure period; and provide the output pixel values to generate an image frame.

Disclosed are an image sensor having a light-emitting diode (LED) flicker mitigation function and an image processing system including the image sensor. The image processing system includes an image sensor including a plurality of pixels, the plurality of pixels configured to respectively generate pixel signals corresponding to photocharges, and configured to perform analog-to-digital conversion (ADC) on the pixel signals to generate digital pixel signals; and an image signal processor configured to process the digital pixel signals to generate image data. The image sensor operates in a first operating mode in a situation in which a light-emitting diode (LED) light is provided, and operates in a second operating mode in a general situation in which the LED light is not provided.

Imaging apparatus (2000, 2100, 2200) includes a photosensitive medium (2004, 2204) and an array of pixel circuits (302), which are arranged in a regular grid on a semiconductor substrate (2002) and define respective pixels (2006, 2106) of the apparatus. Pixel electrodes (2012, 2112, 2212) are connected respectively to the pixel circuits in the array and coupled to read out photocharge from respective areas of the photosensitive medium to the pixel circuits. The pixel electrodes in a peripheral region of the array are spatially offset, relative to the regular grid, in respective directions away from a center of the array.

Imaging apparatus (1300, 1400, 1500) includes a semiconductor substrate (1302), which includes at least first and second sensing areas (1306, 1308, 1502, 1514) with a predefined separation between the sensing areas. First and second arrays of pixel circuits (1312) are formed respectively on the first and second sensing areas and define respective first and second matrices of pixels. First and second photosensitive films (1314, 1316, 1402) are disposed respectively over the first and second arrays of pixel circuits, and are configured to output photocharge to the pixel circuits in response to radiation incident on the apparatus in different, respective first and second spectral bands.