Some embodiments relate to an imaging system including an active pixel and an analog-to-digital conversion (ADC) circuit including comparator. The comparator may be operatively coupled to the active pixel and configured to receive an output of the active pixel. The back-end ADC and memory circuit may be operatively coupled to the active pixel. The back-end ADC and memory circuit may include a write control circuit, an ADC memory operatively coupled to a read/write data bus and to the write control circuit, and a state latch operatively coupled to the write control circuit.

Some embodiments relate to an imaging system including an active pixel and an analog-to-digital conversion (ADC) circuit including comparator. The comparator may be operatively coupled to the active pixel and configured to receive an output of the active pixel. The back-end ADC and memory circuit may be operatively coupled to the active pixel. The back-end ADC and memory circuit may include a write control circuit, an ADC memory operatively coupled to a read/write data bus and to the write control circuit, and a state latch operatively coupled to the write control circuit.

A solid-state imaging element and an electronic device are provided. A pixel at least includes a photoelectric conversion unit that performs photoelectric conversion, an FD unit to which charge generated in the photoelectric conversion unit is transferred, and an amplification transistor that has a gate electrode to which the FD unit is connected. A reference signal is input to a MOS transistor. The reference signal is referred to when AD conversion is performed on a pixel signal according to an amount of light received by the pixel. Then, a shared structure is employed in which a predetermined number of pixels share an AD converter that includes a differential pair including the MOS transistor and the amplification transistor. Each of the pixels is provided with a selection transistor that is used to select a pixel for which AD conversion is performed on the pixel signal.

A computational pixel imaging device that includes an array of pixel integrated circuits for event-based detection and imaging. Each pixel may include a digital counter that accumulates a digital number, which indicates whether a change is detected by the pixel. The counter may count in one direction for a portion of an exposure and count in an opposite direction for another portion of the exposure. The imaging device may be configured to collect and transmit key frames at a lower rate, and collect and transmit delta or event frames at a higher rate. The key frames may include a full image of a scene, captured by the pixel array. The delta frames may include sparse data, captured by pixels that have detected meaningful changes in received light intensity. High speed, low transmission bandwidth motion image video can be reconstructed using the key frames and the delta frames.

An imaging pixel formed by a photodetector connected to a reading circuit comprising: an integration capacitance, a transistor for resetting the integration capacitance, a coupling transistor between the photodetector and the integration capacitance, a memorisation capacitance, a second transistor for resetting the memorisation capacitance, a memorisation switch between the integration capacitance and the memorisation capacitance, to enable different configurations corresponding to different phases of assessing parameters of the pixel and in particular a ratio R=Cint/Cmem.

The dynamic range of a solid-state imaging element including a comparator is expanded.

The solid-state imaging element includes a pixel circuit and a comparison transistor. In the solid-state imaging element, the pixel circuit generates a pixel signal and outputs the pixel signal to a vertical signal line. Further, the comparison transistor has a source connected to a constant current source configured to supply a constant current to the vertical signal line. The comparison transistor has a gate to which a predetermined reference signal is input. Further, the comparison transistor has a drain from which a comparison result between the pixel signal and the reference signal is output.

Provided are a solid-state imaging device capable of improving image quality of a captured image even if the pixel size is increased, and an electronic device equipped with the solid-state imaging device. A solid-state imaging device is provided that includes: at least two column areas that perform Analog To Digital (AD) conversion of a pixel signal generated by a pixel; a plurality of vertical signal lines that transfers the pixel signal to the column areas; and a free area in which the plurality of vertical signal lines is not wired, in which two of the vertical signal lines facing each other sandwiching the free area are arranged, and lengths of the two vertical signal lines are substantially equal to each other.

Provided are a solid-state imaging device capable of improving image quality of a captured image even if the pixel size is increased, and an electronic device equipped with the solid-state imaging device. A solid-state imaging device is provided that includes: at least two column areas that perform Analog To Digital (AD) conversion of a pixel signal generated by a pixel; a plurality of vertical signal lines that transfers the pixel signal to the column areas; and a free area in which the plurality of vertical signal lines is not wired, in which two of the vertical signal lines facing each other sandwiching the free area are arranged, and lengths of the two vertical signal lines are substantially equal to each other.

An imager device includes a pixel sensor configured to receive and convert incident radiation into a pixel signal and a readout circuit configured to receive the pixel signal from the pixel sensor, generate a received signal strength indicator (RSSI) value based on the pixel signal, and generate a digital signal based on the RSSI value and the pixel signal.

An imager device includes a pixel sensor configured to receive and convert incident radiation into a pixel signal and a readout circuit configured to receive the pixel signal from the pixel sensor, generate a received signal strength indicator (RSSI) value based on the pixel signal, and generate a digital signal based on the RSSI value and the pixel signal.