In a solid-state imaging element that performs AD conversion for each pixel, image quality degradation when resolution is lowered is suppressed without wastefully consuming power. The solid-state imaging element includes a plurality of pixels. Each of the plurality of pixels is provided with a comparison unit, an addition circuit, and a data storage unit. The comparison unit generates a difference signal obtained by amplifying a difference between an analog pixel signal to which a predetermined coordinate is assigned and a predetermined reference signal. The addition circuit generates an addition signal by performing analog addition of the difference signal and a difference signal regarding another coordinate adjacent to the predetermined coordinate. The data storage unit holds a digital signal indicating a time when an output signal of the comparison unit corresponding to the addition signal is inverted.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

A first circuit constituting a plurality of first circuit in a first direction, which stores a signal output from a pixel having a photoelectric conversion unit; a first control unit to which the plurality of first circuits are connected and outputs a first signal for outputting signals stored in the plurality of first circuits; a readout unit that reads out the signal output from the first circuit; a plurality of second circuits that are connected to the first control unit, a plurality of sets of the plurality of second circuits in the first direction; and a second control unit that controls a readout of the signal by the readout unit. The first control unit outputs a second signal to the plurality of second circuits together with the first signal; and the second control unit controls the readout of the signal by the readout unit, based on the second signal.

A first circuit constituting a plurality of first circuit in a first direction, which stores a signal output from a pixel having a photoelectric conversion unit; a first control unit to which the plurality of first circuits are connected and outputs a first signal for outputting signals stored in the plurality of first circuits; a readout unit that reads out the signal output from the first circuit; a plurality of second circuits that are connected to the first control unit, a plurality of sets of the plurality of second circuits in the first direction; and a second control unit that controls a readout of the signal by the readout unit. The first control unit outputs a second signal to the plurality of second circuits together with the first signal; and the second control unit controls the readout of the signal by the readout unit, based on the second signal.

An image sensor may include an array of image sensor pixels. The array of image sensor pixels may be controlled by row driver circuitry. The row driver circuitry may include row drivers that receive power supply signals from transconductance amplifier circuitry. The transconductance amplifier circuitry may include multiple amplifiers with output ports shorted to one another. Each amplifier may include input transistors, cross-coupled transistors with a low threshold voltage, and additional transistors coupled in series with the cross-coupled transistors and having a moderate or high threshold voltage.

An image sensor may include an array of image sensor pixels. The array of image sensor pixels may be controlled by row driver circuitry. The row driver circuitry may include row drivers that receive power supply signals from transconductance amplifier circuitry. The transconductance amplifier circuitry may include multiple amplifiers with output ports shorted to one another. Each amplifier may include input transistors, cross-coupled transistors with a low threshold voltage, and additional transistors coupled in series with the cross-coupled transistors and having a moderate or high threshold voltage.

An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

In a solid state imaging element in which whether or not an address event has occurred is detected, the circuit area in each pixel is reduced.

A driving circuit supplies a prescribed reference signal the level of which gradually fluctuates with lapse of time. A plurality of pixels each includes an auto-zero transistor and a reset control section. The auto-zero transistor initializes a change amount acquisition section for obtaining a brightness change amount. The reset control section switches the auto-zero transistor by using the reference signal in a case where a prescribed address event has occurred.

An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.