A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

A holding apparatus including a holding substrate having a first main face on one side in a thickness direction thereof, and a heat generation section which is disposed in the holding substrate and generates heat when energized. The heat generation section includes a plurality of first heating elements arrayed in a planar direction orthogonal to the thickness direction of the holding substrate, and a second heating element disposed on a side toward the first main face in the thickness direction with respect to the plurality of first heating elements. Any one of the plurality of first heating elements is electrically connected to the second heating element in series through a first via extending in the thickness direction within the holding substrate.

The heater component (1) has a substrate part (2), and a thin coating heater (4) which is equipped outside this substrate part (2) and generates heat by power supply. The thin coating heater (4) is formed of a thermal sprayed coating. The thin coating heater (4) has a heater body (10) and a heater extension part (11). The heater body (10) is arranged on a first end face (2a) of the substrate part (2). The heater extension part (11) is extended from the heater body (10) to a second end face (2b) of the substrate part (2) through a side surface (2c) of the substrate part (2). A tip part (11s) of the heater extension part (11) is a heater power supplying part (12) for supplying electric power to the heater body (10).

Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.

The inventive concept provides a support unit for supporting a substrate. The support unit for supporting the substrate includes a first plate; heating elements provided at the first plate for controlling a temperature of respective region of the substrate; a power supply module configured to generate at least two powers having a different frequency; a power line transmitting a power generated by the power supply module to the heating elements; and filters installed at the power line to selectively filter a power supplied to the heating elements.

A ceramic heater includes a ceramic plate in which inner circumferential side and outer circumferential side resistance heating elements are built in; and a cylindrical shaft joined to a rear surface of the ceramic plate. The long hole extends from a start point of the ceramic plate to a terminal position of the outer circumferential portion of the ceramic plate. The entrance portion of the long hole is a long groove. The long groove is provided to extend from the start point to an extended area. Terminals are provided at positions other than the long groove and in a shaft inside area.

A solid state heater and methods of manufacturing the heater is disclosed. The heater comprises a unitary component that includes portions that are graphite and other portions that are silicon carbide. Current is conducted through the graphite portion of the unitary structure between two or more terminals. The silicon carbide does not conduct electricity, but is effective at conducting the heat throughout the unitary component. In certain embodiments, chemical vapor conversion (CVC) is used to create the solid state heater. If desired, a coating may be applied to the unitary component to protect it from a harsh environment.

Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.

An optical heating device includes: a chamber that accommodates a workpiece; a supporter that supports the workpiece in the chamber; a plurality of solid-state light sources emitting heating light toward a main surface of the workpiece; a plurality of reference light sources that emit reference light toward the main surface of the workpiece when power of the same power value is supplied to each of the reference light sources; a plurality of photodetectors that corresponds to the respective reference light sources, and that output signals in response to the intensity of the reference light that has been received; and a controller that executes a reference mode and a heating mode, the reference light sources and the corresponding photodetectors are arranged to face each other through the workpiece, and the photodetectors are configured to receive the reference light emitted from the reference light sources and transmitted through the workpiece.

A plasma processing apparatus includes a stage having a placing surface on which a workpiece is accommodated; a heater provided in the stage and configured to adjust a temperature of the placing surface of the stage; and a controller. The controller is configured to control a supply power to the heater; measure the supply power in a transient state where the supply power to the heater increases and in a second steady state where the supply power to the heater is stable in an extinguished state of plasma; calculate a heat input amount and a heat resistance by performing a fitting on a calculation model that calculates the supply power in the transient state using the heat input amount from the plasma and the heat resistance between the workpiece and the heater as parameters; and calculate a temperature of the workpiece in the first steady state.