Patent classifications
H05B1/0233
MULTILAYER HEATING BODY
A multilayer heating body (1) includes a ceramic substrate (3), an electrode (4), heaters (5, 7), terminals (11, 13, 15, 17), and an electricity supply path (19). Through vias which constitute the electricity supply path include at least one combination of through vias α, β, γ, and δ which meets the following conditions (1) and (2). Condition (1): when the ceramic substrate is viewed from the front surface (3a) side toward the back surface (3b) side, the through via δ is located at a position where the through via δ overlaps the through via β, or in the vicinity of the through via β. Condition (2): when the ceramic substrate is viewed from the front surface side toward the back surface side, the through via γ is located at a position between the through via α and the through via δ, or located at a position where the through via γ overlaps the through via α, or in the vicinity of the through via α.
SELF-CENTERING PEDESTAL HEATER
A pedestal is provided that includes a body, a heater embedded in the body, a support pocket formed within the body having a surface disposed in a first plane, a peripheral surface disposed in a second plane surrounding the support pocket, and a plurality of centering tabs positioned between the support pocket and the peripheral surface, each of the centering tabs having a surface disposed in a third plane that is between both of the first and second planes.
Fluid control apparatus
A fluid control apparatus includes: a metal plate; a heater configured to heat the metal plate; a first joint block and a second joint block provided on an installation surface of the metal plate, extending in a predetermined direction, and formed with a flow passage therein; a first pipe extending along the predetermined direction between the first joint block and the second joint block; a heat transfer cover provided on the installation surface of the metal plate; and a first fluid control device mounted to the first joint block and the second joint block so as to straddle over the first pipe. The heat transfer cover has a rectangular cross-sectional shape, extends along the predetermined direction, and includes a first cover member and a second cover member mounted around an outer circumference of the first pipe in contact with each other. The first cover member covers a part in a cross section of the first pipe and has a first abutment surface abutting on the installation surface of the metal plate. The second cover member covers another part in a cross section of the first pipe and has a second abutment surface abutting on the first fluid control device.
Sensor system for multi-zone electrostatic chuck
A substrate support assembly comprises a plurality of zones, a chuck comprising a ceramic body, and an additional assembly bonded to a lower surface of the chuck. The additional assembly comprises a second body and a plurality of temperature sensors disposed in or on the second body, wherein each zone of the plurality of zones includes at least one of the plurality of temperature sensors. A plurality of spatially tunable heating elements are disposed a) in or on the ceramic body or b) in or on the second body.
TRANSPARENT HEATING DEVICE WITH GRAPHENE FILM
The invention concerns a transparent heating device comprising: a graphene film fixed to a transparent substrate; a first electrode (205) connected to a first edge of the graphene film; and a second electrode (206) connected to a second edge of the graphene film, wherein there is a resistance gradient across the graphene film from the first electrode (205) to the second electrode (206).
OPTICALLY HEATED SUBSTRATE SUPPORT ASSEMBLY WITH REMOVABLE OPTICAL FIBERS
A substrate support includes a plate comprising a top surface and a bottom surface, wherein the top surface is to support a substrate. The plate further comprises an electrode, one or more resistive heating elements, a first plurality of channels, and a plurality of optical fibers in the first plurality of channels, wherein the plurality of optical fibers are removable from the substrate support.
Method of heating/cooling a substrate
A method of heating/cooling one or more substrates includes placing the one or more substrates on a rotatable hot-cold plate, wherein each substrate of the one or more substrates is placed on a corresponding sub-plate of a plurality of sub-plates of the rotatable hot-cold plate. The method further includes rotating the one or more substrates, wherein rotating the one or more substrates comprises rotating each substrate of the one or more substrates independently. The method further includes heating or cooling the one or more substrates using a heating-cooling element, wherein rotating the one or more substrates comprises rotating the one or more substrates relative to the heating-cooling element.
APPARATUS AND METHOD FOR MANUFACTURING CELL
Discussed is an apparatus for manufacturing a cell, the apparatus including: a center electrode reel from which a center electrode is to be unwound; a first heater configured to apply radiant heat to the unwound center electrode; an upper separator reel from which an upper separator to be laminated on a top surface of the center electrode is to be unwound; a lower separator reel from which a lower separator to be laminated on a bottom surface of the center electrode is to be unwound; an upper electrode reel from which an upper electrode to be laminated on a top surface of the upper separator is to be unwound; and a second heater configured to apply radiant heat to the unwound upper electrode.
Method and apparatus for reduction of solar cell LID
Reduction of solar wafer LID by exposure to continuous or intermittent High-Intensity full-spectrum Light Radiation, HILR, by an Enhanced Light Source, ELS, producing 3-10 Sols, optionally in the presence of forming gas or/and heating to within the range of from 100° C.-300° C. HILR is provided by ELS modules for stand-alone bulk/continuous processing, or integrated in wafer processing lines in a High-Intensity Light Zone, HILZ, downstream of a wafer firing furnace. A finger drive wafer transport provides continuous shadowless processing speeds of 200-400 inches/minute in the integrated furnace/HILZ. Wafer dwell time in the peak-firing zone is 1-2 seconds. Wafers are immediately cooled from peak firing temperature of 850° C.-1050° C. in a quench zone ahead of the HILZ-ELS modules. Dwell in the HILZ is from about 10 sec to 5 minutes, preferably 10-180 seconds. Intermittent HILR exposure is produced by electronic control, a mask, rotating slotted plate or moving belt.
METHOD AND SYSTEM FOR PROVIDING VARIABLE RAMP-UP CONTROL FOR AN ELECTRIC HEATER
In one form, the present disclosure is directed toward a method for controlling temperature of a heater including a resistive heating element. The method includes applying power to the resistive heating element of the heater at a variable ramp rate to increase temperature of the heater to a desired temperature setpoint. The variable ramp rate is set to a desired ramp rate. The method further includes monitoring an electric current flowing through the resistive heating element of the heater, and reducing the variable ramp rate from the desired ramp rate to a permitted ramp rate in response to the electric current being greater than a lower limit of an electric current limit band. An upper limit of the electric current limit band is provided as a system current limit.