Disclosed are a plasma reactor and a heating apparatus therefor, wherein the heating apparatus comprises: a programmable power supply, a heater assembly, and a bandpass filter assembly, the heater assembly being configured for connecting with the programmable power supply via the bandpass filter assembly, the bandpass filter assembly including a plurality of bandpass filters, wherein the programmable power supply may input, based on match relationships between outputted AC heating powers and conduction frequencies of the bandpass filters BPF, an AC heating power to a matched heater unit to perform heating, thereby achieving zoned temperature control; the disclosures offer a simple circuit structure due to eliminating the need of switch elements, thereby offering a simple control manner.

A power supply for supplying a power to a heating mechanism used for heating a measurement target that emits a measurement signal includes an input device configured to output an input signal that reflects a control signal in a differentiable periodic waveform having a frequency of 1 kHz or less. The power supply includes a switching amplifier configured to amplify the input signal from the input device and output the amplified signal.

The semiconductor wafer is preheated at a preheating temperature, and then irradiated with a flash of light from a flash lamp. The upper radiation thermometer measures a temperature of a front-surface of a semiconductor wafer which is raised by irradiation with a flash of light. When the front-surface temperature of the semiconductor wafer measured by the upper radiation thermometer reaches the target temperature, the supply of a current to the flash lamps is stopped to lower the front-surface temperature of the semiconductor wafer. Since the supply of a current to the flash lamps is stopped when the measured temperature of the front-surface of the semiconductor wafer reaches the target temperature, the front-surface temperature of the semiconductor wafer can be accurately raised to the target temperature regardless of the front-surface state and reflectance of the semiconductor wafer.

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes etching the first film with first gas including carbon and fluorine to form a concave portion in the first film and form a second film in the concave portion. The method further includes treating the second film by using the second film to second gas or second liquid, wherein the second film is treated without plasma.

A heater assembly includes a housing having an accommodation space therein and having a cooling gas inlet communicating with the accommodation space, a heater coupled to the housing, and a porous block disposed in the accommodation space.

Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.

A support unit may include a plurality of heaters disposed in a matrix form in the support unit to heat a substrate, and a power supply unit for supplying power to the plurality of heaters, wherein a current applied to the plurality of heaters is controlled by switches connected to rows and columns of the matrix, respectively, and the switches connected to the rows of the matrix include first switches capable of controlling the current applied to the rows of the matrix and second switches connected in parallel with the first switches.

A support pedestal is provided that includes a substrate having a top resistive layer defining a first set of zones and a bottom resistive layer defining a second set of zones. Each zone of the first and second set of zones is coupled to at least two electric terminals from among a plurality of electric terminals, and a total number of electric terminals is less than or equal to a total of the first and second set of zones.

Disclosed is a stage including a shaft, a first supporting plate over the shaft, a heater arranged in a trench formed in the first supporting plate, and a gas-supplying tube arranged in the shaft and configured to blow a gas to the first supporting plate. The first supporting plate may have a disk shape, and a cross section of the gas-supplying tube parallel to a surface of the first supporting plate may overlap a center of the disk shape. The first supporting plate may be configured to block the gas so that the gas is not released to a chamber in which the stage is arranged.

Embodiments disclosed herein relate to circular lamp arrays for use in a semiconductor processing chamber. Circular lamp arrays utilizing one or more torroidal lamps disposed in a reflective trough and arranged in a concentric circular pattern may provide for improved rapid thermal processing. The reflective troughs, which may house the torroidal lamps, may be disposed at various angles relative to a surface of a substrate being processed.