A support frame of a thin electric heating band contains: a body, multiple first blades, multiple second blades, multiple fixing sheets, and multiple defining elements. The body includes a base and multiple supporting arms. Each first blade includes multiple first spaced recesses, and each second blade includes multiple second spaced recesses, such that the thin electric heating band is engaged in each first spaced recess and each second spaced recess, thus positioning the thin electric heating band. Each fixing sheet is stacked on each first blade and includes multiple spaced notches, and each spaced notch communicates with each first spaced recess laterally. Each first blade includes an air facing fringe and an air shadow fringe, and each defining element is fixed on the air shadow fringe of each first blade.

A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.

A ceramic heater includes a disc-shaped ceramic plate having a wafer placement surface, and a shaft provided on a surface on an opposite side of the wafer placement surface of the ceramic plate. First and second resistance heating elements are embedded inside the ceramic plate. When the ceramic plate is viewed from above, the gap (first gap) between first turn-back sections which face each other in a circumferential direction, and the gap (second gap) between second turn-back sections which face each other in a circumferential direction are arranged so as not to overlap.

A substrate support includes a body and a thermal void. The body is configured to support a substrate during processing of the substrate. The body includes plates including a top plate, a first intermediate plate, a second intermediate plate and a bottom plate. The plates are arranged to form a stack. The first intermediate plate is disposed on the second intermediate plate. The thermal void is defined by an upper surface of the second intermediate plate and at least one of a lower surface of the first intermediate plate or a lower surface of the top plate. The thermal void is annular-shaped.

A substrate support assembly for supporting a substrate includes a baseplate, a ceramic plate arranged on the baseplate, and N resistive heaters arranged in X rows and Y columns and coupled to the ceramic plate. X, Y, and N are integers greater than 1, and N is less than or equal to X*Y. Each of the N resistive heaters have a first terminal and a second terminal. The ceramic plate includes Y conductors arranged in a first layer of the ceramic plate, and X conductors arranged in a second layer of the ceramic plate. The first terminals of each resistive heater in one of the X rows are directly connected to the Y conductors, respectively, by first vias. Second terminals of each resistive heater in the one of the X rows are directly connected to one of the X conductors by second vias.

A support unit may include a plurality of heaters disposed in a matrix form in the support unit to heat a substrate, and a power supply unit for supplying power to the plurality of heaters, wherein a current applied to the plurality of heaters is controlled by switches connected to rows and columns of the matrix, respectively, and the switches connected to the rows of the matrix include first switches capable of controlling the current applied to the rows of the matrix and second switches connected in parallel with the first switches.

Disclosed is a stage including a shaft, a first supporting plate over the shaft, a heater arranged in a trench formed in the first supporting plate, and a gas-supplying tube arranged in the shaft and configured to blow a gas to the first supporting plate. The first supporting plate may have a disk shape, and a cross section of the gas-supplying tube parallel to a surface of the first supporting plate may overlap a center of the disk shape. The first supporting plate may be configured to block the gas so that the gas is not released to a chamber in which the stage is arranged.

A wafer holder comprising: a ceramic base having a wafer-mounting surface as an upper surface; and a conductive member embedded in the ceramic base, the conductive member including a circuit portion provided parallel to the wafer-mounting surface, a pull-out portion provided parallel to the wafer-mounting surface and spaced from the circuit portion in a direction opposite to a direction toward the wafer-mounting surface, and a connecting portion configured to electrically connect the circuit portion and the pull-out portion to each other.

A heater includes a base having a first surface and a second surface, and a heat generator disposed on a third surface of the base, the third surface being parallel to the first surface. The base includes a hole portion that opens in at least the second surface. The third surface includes a plurality of blank areas on each of which the heat generator is not present and each of which is circular. The blank areas include a first blank area including a region that the hole portion overlaps and a second blank area that does not include a region that the hole portion overlaps.

A sample holder includes an insulating substrate, a heat element, a support member, and a bond. The insulating substrate is a ceramic member having a first surface and a second surface opposite to the first surface. The heat element is on the second surface of the insulating substrate. The second surface of the insulating substrate includes a first portion where the heat element is located, a second portion surrounding the first portion, and a groove between the first portion and the second portion. A surface roughness of the first portion is greater than a surface roughness of the second portion.