Patent classifications
H05B3/283
THERMOCOUPLE GUIDE AND CERAMIC HEATER
A thermocouple guide includes a first tube portion of a straight shape, and a second tube portion connected to the first tube portion and including a curved section that is formed to turn an extension direction from the first tube portion. An outer diameter of at least a tip-side part of the curved section, the tip-side part extending from a tip end of the curved section through a predetermined length, is smaller than an outer diameter of the first tube portion.
SUBSTRATE FIXING DEVICE, ELECTROSTATIC CHUCK, AND METHOD OF MANUFACTURING ELECTROSTATIC CHUCK
There is provided a substrate fixing device. The substrate fixing device includes: a base plate; and an electrostatic chuck that is fixed to the base plate and configured to adsorb a subject by electrostatic force. The electrostatic chuck includes: an adsorptive layer configured to adsorb and retain the subject; and a heater layer that is provided between the adsorptive layer and the base plate and configured to heat the subject retrained by the adsorptive layer. A thickness of the heater layer is uniform over an entire area of the heater layer.
HEATABLE GLAZING PANEL
A laminated electrically heatable glazing panel includes: (i) a first outer and second inner substrates with respectively an internal and an external faces, laminated to one another via at least one polymer inclusive interlayer, (ii) a coating including at least one heatable conductive layer provided between the outer and the inner substrates, the coating divided into at least one heatable coating zone and at least one non-heatable coating zone, the first heatable zone being delimited by at least two zone boundaries which are insulating by a coating deletion area, and (iii) at least a first and second conductive bus bars, each of the spaced first and second bus bars adapted to supply electrical voltage across the at least one electrically heatable coating zone. Only the at least one electrically heatable coating zone is heated when current runs through said first and second bus bars and wherein the conductive path is defined between the busbars.
CERAMIC HEATER
A ceramic heater includes an AlN ceramic substrate having a wafer placement surface in which, from a position closer to the wafer placement surface, a plasma-generation RF electrode and a heater electrode are embedded in this order so as to be separated from each other. The AlN ceramic substrate includes an AlN ceramic high-resistivity layer disposed between the RF electrode and the heater electrode, and an AlN ceramic low-resistivity layer other than the high-resistivity layer. The high-resistivity layer and the low-resistivity layer each contain Si, Mg, and Ti. The high-resistivity layer has higher Mg and Ti contents and a higher volume resistivity than the low-resistivity layer.
Showerhead
A showerhead provided in a chamber of a semiconductor manufacturing apparatus and facing a wafer holder includes: a plate-shaped ceramic substrate; a plurality of through holes penetrating the ceramic substrate in the direction of the thickness of the ceramic substrate; and a plurality of radio frequency conductors embedded in a plurality of zones, respectively, of the ceramic substrate, as seen on the side of a surface of the ceramic substrate facing the wafer holder.
Cylindrical heating apparatus
A specimen heating apparatus includes a heater unit configured to heat a test specimen held in a material testing machine, a heater holding unit configured to hold the heater unit in a set position relative to the test specimen for heating, a specimen temperature measurement unit attached to the heater unit and configured to measure temperature of the test specimen when the heater unit is in the set position, a temperature controller configured to control heating of the heater unit in response to a temperature measured by the specimen temperature measurement unit, and a thermal insulation unit configured to cover the heater unit, wherein the heater holding unit holds the heater unit in such a way that the heater unit is allowed to be brought to and removed from the set position while the test specimen is being held in the material testing machine.
SEMICONDUCTOR MANUFACTURING APPARATUS AND WAFER HOLDING TABLE FOR SEMICONDUCTOR MANUFACTURING APPARATUS
A wafer holder includes a mounting table that has a mounting surface for a workpiece at a top, a supporting member that supports the mounting table from a lower side, a first cylindrical member one end of which is joined hermetically to a lower surface of the mounting table, and a second cylindrical member that is provided inside the first cylindrical member and one end of which is joined hermetically to the lower surface of the mounting table.
CERAMIC HEATER AND METHOD OF MANUFACTURING THE SAME
A ceramic heater includes: a ceramic plate which is provided with a wafer placement surface on an upper surface and in which a heating resistor is internally embedded; a ceramic tubular shaft with an upper end bonded to a lower surface of the plate; and power feeding members which penetrate a peripheral wall part of the tubular shaft in a vertical direction, and are electrically connected to the heating resistor. The power feeding members are embedded in the peripheral wall part of the tubular shaft, and are in tight contact with a ceramic material of the tubular shaft.
Ultra fine bubble generation apparatus
An object of the present disclosure is to improve the generation efficiency of a UFB-contained liquid in a generation apparatus having a circulation mechanism. One embodiment of the present invention is an ultra fine bubble generation apparatus including: a first tank that stores a liquid; a generation unit configured to generate an ultra fine bubble in the liquid output from the first tank; a second tank that stores the liquid output from the generation unit; and a liquid passage that inputs again the liquid stored in the second tank to the first tank, and the ultra fine bubble generation apparatus includes a blocking configuration that blocks an ultra fine bubble included in the stored liquid from being input again to the first tank.
BASE STRUCTURE AND WAFER PLACING DEVICE
A base structure includes a base, a first conductor layer, and a via conductor. The base has a first surface. The first conductor layer is positioned along the first surface in the base. The via conductor includes a first part and a second part in a section that includes the via conductor and that extends in a first direction perpendicular to the first surface. The length of the first part in the first direction is larger than the thickness of the first conductor layer. The length of the second part in the first direction is larger than the thickness of the first conductor layer. The second part is continuous with the first part, and at least a portion of the outer edge of the second part is displaced from the outer edge of the first part when viewed in the first direction.