Patent classifications
H05H1/246
PLASMA GENERATING DEVICE
According to one embodiment of the present disclosure, there can be provided a plasma generating device for performing plasma discharge, the plasma generating device having multiple operation modes including a first mode and a second mode, and including: a first power supply capable of changing a frequency within a first frequency range; a second power supply capable of changing a frequency within a second frequency range that is at least partially different from the first frequency range; a dielectric tube; and an antenna module including a first unit coil wound around the dielectric tube at least one time, a second unit coil wound around the dielectric tube at least one time, and a first capacitor connected in series between the first unit coil and the second unit coil.
Nozzle and substrate treating apparatus including the same
An apparatus for treating a substrate includes a support unit that supports the substrate and a nozzle that dispenses liquid plasma to etch a film formed on the substrate supported on the support unit.
Systems and methods for igniting plasma within tubes
A system is provided for generating plasma within narrow diameter tubes, e.g., tubes with an inner diameter of less than 1 millimeter. The system may comprise the tube, a nozzle connected to at least one end of the tube configured to supply a gas into the interior of the tube at atmospheric pressure, at least one ring-shaped anode electrode and configured to surround an outer surface of the tube, at least one ring-shaped cathode electrode spaced apart from the anode electrode along the longitudinal axis and configured to surround the outer surface of the tube, and a voltage source connected to the at least one anode electrode. When activated, the system is configured to generate an electric field between the electrodes which ignites a plasma within the gas in the interior of the tube.
Atmospheric pressure plasma reduction of copper oxide to copper metal
Copper oxide films can be reduced to copper with an atmospheric pressure argon and hydrogen plasma at temperatures between 25 and 300 C. A 50-nm-thick CuO layer on a Cu-coated Si wafer, 200 mm in diameter, can be fully reduced by the plasma in 200 seconds at 200 C. The activation energy for the reaction can be approximately 3.7 kcal/mol. X-ray photoelectron spectroscopy can show the copper oxide reduced to metallic copper.