Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

The present invention relates to a method for checking a discharge inception voltage of a dielectric material, a method for forming a displacement field on the dielectric materials comprising applying a voltage the same as or higher than the discharge inception voltage generated by an external field obtained from the above to the dielectric material to which electrodes are connected, a method for forming plasma on the surfaces of the dielectric material comprising injecting reaction gases and applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, a method for forming a displacement field on the entire surface of the dielectric material comprising applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, and a dielectric material which is modified, in which the surfaces thereof are treated with plasma by the methods described above.

A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.

Disclosed herein are methods and apparatuses for adding thermal energy to a glass melt. Apparatuses for generating a thermal plasma disclosed herein comprise an electrode, a grounded electrode, a dielectric plasma confinement vessel extending between the two electrodes, and a magnetic field generator extending around the dielectric plasma confinement vessel. Also disclosed herein are methods for fining molten glass comprising generating a thermal plasma using the apparatuses disclosed herein and contacting the molten glass with the thermal plasma. Glass structures produced according to these methods are also disclosed herein.

A system for generating cold plasma is presented, suitable for use in in-vivo treatment of biological tissue. The system comprising: a control unit connectable to an elongated member at a first proximal end of the elongated member. The elongated member comprises a plasma generating unit at a second distal end thereof and gas and electricity transmission channels extending from said first proximal end towards said plasma generating unit. The control unit comprises a gas supply unit configured to provide predetermined flow rate of selected gas composition through said gas transmission channel and a power supply unit configured to generate selected sequence of high-frequency electrical pulses, typically in mega Hertz range, directed through said electricity transmission channel, thereby providing power and gas of said selected composition to the plasma generating unit for generating cold plasma.

This disclosure relates to stabilized anti-cancer cold atmospheric plasma (CAP)-stimulated media, to methods for preparing such media, and to methods of treatment using such media.

A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.

A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.

A gas jetting apparatus capable of uniformly jetting, even onto a treatment-target object having a high-aspect-ratio groove, a gas into the groove. The gas jetting apparatus includes a gas jetting cell unit for jetting a gas toward a treatment-target object. The gas jetting cell unit includes a first cone-shaped member and a second cone-shaped member. A gap is formed between a side surface of a first cone shape and a side surface of the second cone-shaped member. Apex sides of the cone-shaped members face the treatment-target object.

An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device. The portable container comprises a closed compartment containing the implant immersed in a fluid, and the activation device comprises a slot configured to receive the portable container. The activation device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the closed compartment, when the portable container is disposed in the slot. A container suitable for providing plasma treatment to a silicone implant and a method for preparing an implant for implantation surgery are also provided.