The disclosure includes a coaxial microwave applicator for plasma production, including a coaxial tube formed by a central core and an outer conductor separated from the central core by an annular space allowing propagation of microwaves. The applicator includes: a cylindrical permanent magnet disposed at the end of the central core; and at least one annular permanent magnet disposed at the end of the outer conductor, all of the magnets disposed at the end of the coaxial tube having the same direction of magnetization. The magnetization of the magnets forms a magnetic field suitable for generating, in a zone away from the end of the applicator, an electronic cyclotronic resonance coupling with the electric microwave field of the applicator. The external radius and the magnetization of the annular magnet are selected such that the magnetic field lines generated by the magnets pass through the coupling zone in a direction substantially parallel to the axis of the applicator.

Apparatus for treating materials with plasma, comprising a microwave generator (15), a waveguide (20) and a tubular torch (30), comprising three coaxial tubes (33, 35, 37) and a central section (30.2) connected to the waveguide (20) by means of a body (50) having a cavity (52) through which the tubes pass. A plasma containment chamber is defined in the outer tube (35) at the cavity (52) of the body (50).

A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.

The ion source includes a microwave power supply provided outside main magnetic poles, a radiofrequency waveguide and an antenna configured to introduce a microwave generated by the microwave power supply to a region to which a magnetic field generated by the main magnetic poles is applied, and a magnetic field generation unit provided inside a hole provided in a part of the main magnetic poles and configured to generate a magnetic field in a direction opposite to that of the magnetic field generated by the main magnetic poles. Plasma is generated inside the main magnetic poles by a magnetic field generated by applying the magnetic field generated by the magnetic field generation unit in the opposite direction to the main magnetic field decreased according to a diameter of the hole and the microwave introduced by the radiofrequency waveguide and the antenna.

Systems and methods for plasma based synthesis of graphitic materials. The system includes a plasma forming zone configured to generate a plasma from radio-frequency radiation, an interface element configured to transmit the plasma from the plasma forming zone to a reaction zone, and the reaction zone configured to receive the plasma. The reaction zone is further configured to receive feedstock material comprising a carbon containing species, and convert the feedstock material to a product comprising the graphitic materials in presence of the plasma.

A plasma processing method for a gas comprises supplying a gas inside a cavity for plasma processing, supplying microwaves having a predetermined frequency and power in order to generate a plasma of the gas, and propagating the microwaves in the gas by means of a waveguide which communicates directly with the cavity so as to provide a plasma cracking processing operation for the gas inside the cavity (2).

A plasma torch employs a dielectric resonator excited at separate locations with phase shifted signals to provide more uniform current flow through the resonator. High-power operation is possible while protecting the dielectric by using a combination segregated spiral flow and linear flow cooling air at different rates. Microwave leakage from the plasma resonant chamber is contained by conductive metal chokes.

Provided is a negative ion source and a negative ion generation method capable of providing a high negative ion generation efficiency. A negative ion source includes a housing that includes: an inlet from which a sample is introduced; a plasma generation region communicated with the inlet, a plasma being generated by discharge in the plasma generation region; a negative ion generation region in which particles dissociated or excited by a reaction of the generated plasma with the sample are converted into negative ions; and an extraction port communicated with the negative ion generation region, the generated negative ions being extracted outside through the extraction port. The negative ion generation region is filled with a thermionic emission material for generating thermoelectrons by high frequency heating.

The embodiments disclosed herein are directed to systems and devices which utilize multiple microwave plasmas can be used to increase the efficiency of traditional single microwave plasma systems. Disclosed herein is a microwave plasma apparatus for processing materials which includes a reaction chamber, a plurality of microwave plasma applicators in communication with the reaction chamber, one or more microwave radiation sources, at least one waveguide for guiding microwave radiation from the one or more microwave radiations sources to multiple plasma applicators, and a material feeding system in communication with the reaction chamber.

Described is an apparatus for guiding an electromagnetic microwave, having: antenna surrounding walls, which define an interior space so as to surround therein at least an end region of an antenna of a microwave source, in particular laterally annularly as well as frontally; waveguide boundary walls, at least two of which are arranged in parallel to each other, wherein the waveguide boundary walls form a, in particular cuboid-shaped, waveguide having a substantially rectangular cross-section, wherein a cross-sectional plane is defined by a first direction that extends along a longitudinal direction of the antenna and a second direction that extends perpendicularly to the first direction, wherein it holds: 25>a/b>3, wherein a: is a width of the waveguide along the second direction, b: is a height of the waveguide along the first direction, wherein the apparatus is designed to let proceed a microwave from the interior space of the antenna surrounding walls into the waveguide.