A conductive rod body is embedded in an insulative torch adapter into which a plasma torch is fitted so that a leading end protrudes from its outer circumferential surface. Further, a metal plate member electrically connected to a cable line to which a voltage for plasma ignition is applied is attached to a lower holder, and a conductive leaf spring member having a V-shaped cross section is attached to an upper holder. When the torch adapter is placed on the lower holder so that the protruding part of the rod body faces upward and the upper holder is closed to tighten a draw latch, the rod body and the metal plate member are electrically connected via the leaf spring member, and a high voltage for ignition can be applied to the plasma torch.

A dual frequency power-driven inductively coupled plasma torch according to an exemplary embodiment of the present invention includes: a hollow confinement tube provided with a space in which thermal plasma is formed; an induction coil that surrounds the confinement tube; and a power supply source that supplies power to the induction coil, wherein the power supply source may supply at least two powers having different frequencies to the induction coil.

A reaction gas supply equipment of an inductive coupled plasma mass spectrometer comprises an ammonia supply end and a helium supply end and a reaction gas supply equipment, which is supplied with an ammonia supply end and a helium supply end, and the reaction gas supply equipment is provided with an ammonia mass flow meter to adjust the flow of ammonia and helium mass flow meter to adjust the flow of helium; the ammonia mass flow meter and helium mass flow meter are adjusted by the proportion of reaction gas specified by the inductive coupled plasma spectrometer, and ammonia gas is mixed with helium gas to form reaction gas, which is then provided to the inductive coupled plasma mass spectrometer; through the technical means of the prevent invention, several advantages such as the protection of detection instrument and the reduction of cost of reaction gas can be achieved.

Exemplary systems and methods for modifying and enhancing pyrotechnic emissions and effects are provided including systems for irradiating pyrotechnic emissions using electromagnetic radiation sources with programmable electromagnetic radiation profiles. Exemplary systems include coupling an electromagnetic radiation source to a pyrotechnic device to irradiate pyrotechnic emissions or irradiating pyrotechnic emissions with an external electromagnetic radiation source. Exemplary methods include identifying a desired pyrotechnic emission output and designing an emission and effect output to meet the desired output.

Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

A chemically assisted reactive ion beam etching (CAME) system for fabricating a slanted surface-relief structure in a material layer includes an reactive ion source generator configured to generate a plasma using a first reactive gas; one or more aligned collimator grids configured to extract and accelerate at least some of the reactive ions in the plasma to form a collimated reactive ion beam towards the material layer; and a gas ring configured to inject a second reactive gas onto the material layer. The plasma includes reactive ions of the first reactive gas that react with the material layer to generate volatile materials. The second reactive gas also reacts with the material layer. The collimated reactive ion beam and the second reactive gas etch the material layer both physically and chemically to form the slanted surface-relief structure in the material layer.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

A plasma apparatus includes a remote plasma source, a substrate processing chamber, and a connector which connects the remote plasma source to the substrate processing chamber. The remote plasma source includes a continuous peripheral wall structure that surrounds an inner channel, and that includes an electrode structure that defines at least a part of an internal channel extending internally within the continuous peripheral wall structure in which the inductively coupled plasma can be sustained. The remote plasma source also includes an electrical signal supply device for supplying an electrical signal that drives the electrode structure, and a plasma outlet which is in communication with the internal channel. The connector is in connection with the plasma outlet of the remote plasma source and the substrate processing chamber so that at least some components of the inductively coupled plasma sustained in the internal channel can be introduced to the substrate processing chamber.

Example systems have a defrost system that can receive a first RF signal at a first frequency to defrost a load. An air treatment device can receive a second RF signal at a second frequency and perform an air treatment process. An RF signal source has a power output, and a switching arrangement selectively electrically connects the defrost system and the first air treatment device to the power output of the RF signal source. A controller can electrically connect one of the defrost system and the first air treatment device to the power output of the RF signal source. When the defrost system is electrically connected, the RF signal source outputs the first RF signal at the first frequency, and when the first air treatment device is electrically connected, the RF signal source outputs the second RF signal at the second frequency.

Techniques for fabricating a slanted structure are disclosed. In one embodiment, a method of fabricating a slanted structure in a material layer includes injecting a first reactive gas into an reactive ion source generator, generating a plasma that includes reactive ions in the reactive ion source generator, extracting at least some of the reactive ions from the plasma to form a collimated reactive ion beam towards the material layer, and injecting a second reactive gas onto the material layer. The collimated reactive ion beam and the second reactive gas etch the material layer both physically and chemically to form the slanted surface-relief structure.