The present disclosure relates to a power supply system for improving plasma uniformity and a method thereof, wherein the power supply system includes a signal generating device, a first electrode and a second electrode. The signal generator is respectively connected with a plurality of signal processing circuits and is used for generating a plurality of initial signals at different frequencies; the signal processing circuits are used for processing the initial signals at corresponding frequencies; the plurality of signal processing circuits are all connected with the first electrode; and the initial signals are processed by the signal processing circuits and then act on the plasma through the first electrode. The present disclosure may effectively process signals in different power supplies, improve the stability of plasma discharge, reduce the impact of the coupling effect between different power supplies, and realize the independent control of ion flux and ion energy.

Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about n.sub.e×10.sup.8-n.sub.e×10.sup.12 or 0.001 to 0.4 W/cm.sup.3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).

Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

The present disclosure provides a plasma reactor having a function of tuning low frequency RF power distribution, comprising: a reaction chamber in which an electrically conductive base is provided, the electrically conductive base being connected to a low frequency RF source via a first match, an electrostatic chuck being provided on the electrically conductive base, an upper surface of the electrostatic chuck being configured for fixing a to-be-processed substrate, an outer sidewall of the electrically conductive base being coated with at least one layer of plasma corrosion-resistance dielectric layer, a coupling ring made of a dielectric material surrounding an outer perimeter of the base, a focus ring being disposed above the coupling ring, the focus ring being arranged surround the electrostatic chuck and be exposed to a plasma during a plasma processing procedure; the plasma reactor further comprising an annular electrode that is disposed above the coupling ring but below the focus ring; a wire, a first end of which is electrically connected to the base, and a second end of which is connected to the annular electrode, a variable capacitance being serially connected to the wire.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode, a second electrode arranged so as to define a predetermined gap between a planar bottom surface of the first electrode and a planar top surface of the second electrode; at least one supplemental electrode, a first dielectric layer, a second dielectric layer, at least one supplemental top dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, at least one supplemental bottom dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, and a power supply configured to supply electrical power to the first, second, and supplemental electrodes at a predetermined voltage and frequency, such that, based on the predetermined gaps between the first, second, and supplemental electrodes, atmospheric pressure, low temperature plasma is generated.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode; a second electrode opposing the first electrode so as to define a predetermined gap therebetween; at least one supplemental electrode opposing a planar top surface of the second electrode and a planar bottom surface of the first electrode; a first dielectric layer; at least one supplemental dielectric layer that is disposed on a additional planar bottom surface of the at least one supplemental electrode having a relative permittivity between 2 and 500, and a thickness of 3 mm or less; and a power supply configured to supply electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first and second electrodes, atmospheric pressure, low-temperature plasma is generated.

A method and system for tattoo removal from a subject by exposing tattoo ink particles trapped within the dermis to a cold plasma is described herein. The tattoo removal method and system can be used to remove the tattoo from the skin of the subject being treated. In addition, the method and system described allows for the extraction of the tattoo ink particles, which may have toxic properties, from the subject's body.

The present disclosure provides systems and methods for nitric oxide (NO) generation and/or delivery. In some aspects, a nitric oxide generation system comprises a plasma chamber configured to ionize a reactant gas including nitrogen and oxygen to form a product gas that includes NO, a scrubber downstream from the plasma chamber and having a volume at least partially containing NO.sub.2 scrubbing material, and a flow controller downstream of the scrubber configured to control the flow of product gas from the scrubber to a delivery device. A pump is configured to convey product gas from the plasma chamber into the scrubber and is configured to pressurize the product gas in the scrubber when the flow controller is positioned to restrict the flow of product gas from the scrubber. The pressurized product gas accumulates within the scrubber and is at least partially scrubbed of NO.sub.2 prior to passage through the flow controller.

The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem, and a ground plate disposed between the support body and the stem. A top flange is coupled to a lower peripheral surface the ground plate and a bottom flange is coupled to a bottom of the chamber body. The bottom flange and the top flange is coupled to one another with a plurality of straps, each of the straps having a first end coupled to the bottom flange and a second end coupled to the top flange.