Patent classifications
H05K1/024
PREPARATION METHOD FOR SPHERICAL SILICA POWDER FILLER, POWDER FILLER OBTAINED THEREBY AND USE THEREOF
A preparation method for a spherical silica powder filler, comprises the following steps: S1, providing spherical polysiloxane comprising T units by means of a hydrolysis condensation reaction of R.sub.1SiX.sub.3, wherein R.sub.1 is hydrogen atom or an independently selectable organic group having 1 to 18 carbon atoms, X is a hydrolyzable group, and the T unit is R.sub.1SiO.sub.3—; and S2, calcining the spherical polysiloxane under the condition of a dry oxidizing gas atmosphere at a calcining temperature between 850° C. and 1200° C., so as to obtain a spherical silica powder filler having a low hydroxyl content. The spherical silica powder filler is composed of at least one selected from Q.sub.1 unit, Q.sub.2 unit, Q.sub.3 unit and Q.sub.4 unit, wherein Q.sub.1 unit is Si(OH).sub.3O—, Q.sub.2 unit is Si(OH).sub.2O.sub.2—,Q.sub.3 unit is SiOHO.sub.3—, Q.sub.4 unit is SiO.sub.4—, and the content of Q.sub.4 unit is greater than or equal to 95%.
Substrate Integrated Waveguide Transition
Example embodiments relate to substrate integrated waveguide (SIW) transitions. An example SIW may include a dielectric substrate having a top surface and a bottom surface and a first metallic layer portion coupled to the top surface of the dielectric substrate that includes a single-ended termination, an impedance transformer, and a metallic rectangular patch located within an open portion in the first metallic layer portion such that the open portion forms a non-conductive loop around the metallic rectangular patch. The SIW also includes a second metallic layer portion coupled to the bottom surface of the dielectric substrate and metallic via-holes electrically coupling the first metallic layer to the second metallic layer. The SIW may be implemented in a radar unit to couple antennas to a printed circuit board (PCB). In some examples, the SIW may be implemented with only a non-conductive opening that lacks the metallic rectangular patch.
CIRCUIT BOARD STRUCTURE
A circuit board structure includes a substrate, a third dielectric layer, a fourth dielectric layer, a first external circuit layer, a second external circuit layer, a conductive through hole electrically connected to the first and second external circuit layers, a first annular retaining wall surrounding the conductive through hole, and a second annular retaining wall surrounding the conductive through hole. The first annular retaining wall is electrically connected to the first external circuit layer and a first inner circuit layer. The second annular retaining wall is electrically connected to the second external circuit layer and a second inner circuit layer. A first ground circuit, the first annular retaining wall, and the first inner circuit layer define a first ground path surrounding a first signal circuit. A second ground circuit, the second annular retaining wall, and the second inner circuit layer define a second ground path surrounding a second signal circuit.
Laminated plate
A laminated plate has a metallic conductive layer layered on one surface or each surface of an insulating substrate, the insulating substrate contains a fluorine resin and a polymer of an alkoxysilane, and the fluorine resin is dispersed in the polymer of the alkoxysilane.
CIRCUIT BOARD AND MULTILAYER CIRCUIT BOARD
A circuit board includes, in order in a stacking direction, a first insulating layer, a second insulating layer in contact with the first insulating layer, and a conductor layer, the first insulating layer includes a liquid crystal polymer as a main component, and the second insulating layer includes a fluoropolymer including at least one of polytetrafluoroethylene and a perfluoroalkoxy alkane and includes a polyimide resin with an imidization rate of about 90% or more, the polyimide resin being present in an amount of about 0.5 parts or more by weight and less than about 20 parts by weight per 100 parts by weight of the fluoropolymer.
CIRCUIT BOARD STRUCTURE FOR MOBILE PCI EXPRESS MODULE
A circuit board structure for mobile PCI express module is applied to conform to PCI Express 4.0 specification. The circuit board structure includes a top signal layer and a bottom signal layer with a core and a conductive copper wire, a power supply layer disposed between the top signal layer and the bottom signal layer, a plurality of first insulating layers disposed between the top signal layer and the power supply layer and between the bottom signal layer and the power supply layer, and a plurality of second insulating layers disposed between the power supply layer and the first insulating layers. The dielectric loss values of the first insulating layer and the second insulating layer are between 0.004 and 0.014, and the length of the conductive cooper wire is between 500 and 2500 mil, so that the signal loss of the mobile PCI express module is less than 8 dB.
WIRING SUBSTRATE
A wiring substrate includes a first insulating layer, a conductor layer including first and second pads, a second insulating layer having first openings exposing the first pads and a second opening exposing the second pads, metal posts formed on the first pads and filling the first openings, and a wiring structure positioned in the second opening and having first and second connection pads such that the second connection pads are connected to the second pads. The upper surfaces of the first connection pads and the upper surfaces of the metal posts form a component mounting surface having first, second and third regions, the first connection pads are formed in the first, second and third regions and include a group of first connection pads formed in the first and second regions and electrically connected and a group of first connection pads formed in the first and third regions and electrically connected.
WIRING CIRCUIT BOARD
Provided is a wiring circuit board that includes a first insulating layer, a conductive pattern disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and covering the conductive pattern, and a third protective layer disposed between the conductive pattern and the second insulating layer and protecting the conductive pattern. The third protective layer consists of a metal oxide.
Thermally conductive thermoplastic compositions with good dielectric property and the shaped article therefore
A polymer composition includes: from about 20 wt. % to about 80 wt. % of a polymer base resin; from about 10 wt. % to about 60 wt. % of a thermally conductive filler; and from about 5 wt. % to about 60 wt. % of a dielectric ceramic filler having a Dk of at least 20 when measured at 1.1 GHz or greater. The polymer composition exhibits a dielectric constant greater than 3.0 at 1.1 GHz when tested using a split post dielectric resonator and network analyzer on a sample size of 120 mm by 120 mm and 6 mm thickness according to ASTM D150. The polymer composition exhibits a dissipation factor of less than 0.002 at 1.1 GHz when tested using a split post dielectric resonator and network analyzer on a sample size of 120 mm by 120 mm and 6 mm thickness according to ASTM D150.
Glass resin laminate, composite laminate, and manufacturing method thereof
To provide a glass resin laminate of the present invention, in which the glass substrate and the resin layer containing a TFE polymer are strongly laminated, is hardly warped and is excellent in the electrical properties, a composite laminate further having a metal foil, and methods for producing them. A glass resin laminate comprising a glass substrate 10 having an uneven surface 12 with an arithmetic mean roughness of at least 5 nm, and a resin layer containing a tetrafluoroethylene polymer in contact with the uneven surface 12, wherein the uneven surface 12 has specific convex portions 21 and 22 which narrow at at least a part of the root portion as compared with the tip portion.