H05K1/0246

STRUCTURE AND METHOD OF MANUFACTURING A STRUCTURE FOR GUIDING ELECTROMAGNETIC WAVES
20200411942 · 2020-12-31 · ·

Structure and method of manufacturing a structure for guiding electromagnetic waves, the method including providing a printed circuit board having a conductive trace, and providing a metal structure on the conductive trace for guiding the electromagnetic waves, wherein the conductive trace is disposed on the printed circuit board, wherein a metal powder is disposed on the conductive trace, and the metal structure is printed onto the conductive trace on the printed circuit board by fusion using laser.

RF Coaxial Thermal Power Sensor
20200341038 · 2020-10-29 · ·

A coaxial power sensor assembly configured to provide a broadband matched termination utilizing coplanar waveguide topology while simultaneously providing a source of heat energy for a surface mount chip thermistor element to measure applied input power. The coaxial thermal power sensor is comprised of a thin film resistive device on a dielectric substrate and a surface mount chip thermistor element placed in close planar proximity to the resistive device in order to maximize the heat flux via a closely coupled thermal path to the thermistor and alter the bias current through the resistance to be measured. The power sensor is intended to function from DC to 70 GHz, but the same should not be construed as a limitation.

GROUNDING STRUCTURE OF HIGH FREQUENCY CIRCUIT BOARD

A grounding structure of the high-frequency circuit board includes a dielectric substrate, a back surface ground electrode, an upper ground electrode, and a microstripline upper electrode. The dielectric substrate has a first surface and a second surface, and is provided with a first through-hole. A first opening of the first through-hole at the first surface is smaller than a second opening of the first through-hole at the second surface. A first grounding conductor layer is provided in the first through-hole. The back surface ground electrode is provided at the second surface and is connected with the first grounding conductor layer. The upper ground electrode is provided at the first surface and is connected with the first ground conductor layer. The microstripline upper electrode is provided at the first surface.

Communication channel with tuning structure

An example system includes a communication channel and at least one tuning structure coupled to the communication channel. The tuning structure includes a branch of the communication channel. The tuning structure is to dissipate energy from the communication channel at least at one selected wavelength. The branch of the communication channel is a terminated portion.

Wideband termination for high power applications
10772193 · 2020-09-08 · ·

A wideband termination circuit layout is provided for high power applications. The circuit layout may include a dielectric layer having a first surface and a second surface. The circuit layout may also include an input port disposed over the first surface. The circuit layout may further include at least two resistive film patches disposed over the first surface of the dielectric layer and a tuning line between the at least two resistive films disposed over the first surface of the dielectric layer. The at least two resistive film patches are connected in series with the at least one tuning line.

Semiconductor device

Performance of a semiconductor device is improved. The semiconductor device includes a semiconductor chip and a chip component that are electrically connected to each other via a wiring substrate. The semiconductor chip includes an input/output circuit and an electrode pad electrically connected to the input/output circuit and transmitting the signal. The chip component includes a plurality of types of passive elements and includes an equalizer circuit for correcting signal waveforms of the signal, and electrodes electrically connected to the equalizer circuit. The path length from the signal electrode of the semiconductor chip to the electrode of the chip component is 1/16 or more and 3.5/16 or less with respect to the wavelength of the signal.

EXPANSION CARD INTERFACE FOR HIGH-FREQUENCY SIGNALS
20200275566 · 2020-08-27 ·

The present disclosure describes an expansion card interface for a printed circuit board. The expansion card interface includes a substrate having an edge. The expansion card interface further includes a plurality of signal pins configured to communicate one or more signals to and from the printed circuit board. The expansion card interface further includes a plurality of ground pins adjacent to the plurality of signal pins configured to provide a ground. At least one signal pin of the plurality of signal pins extends closer to the edge of the substrate than at least one ground pin of the plurality of ground pins.

MEMORY DEVICES AND SYSTEMS WITH PARALLEL IMPEDANCE ADJUSTMENT CIRCUITRY AND METHODS FOR OPERATING THE SAME
20200159684 · 2020-05-21 ·

Methods, systems, and apparatuses related to memory operation with common clock signals are provided. A memory device or system that includes one or more memory devices may be operable with a common clock signal without a delay from switching on-die termination on or off. For example, a memory device may comprise first impedance adjustment circuitry configured to provide a first impedance to a received clock signal having a clock impedance and second impedance adjustment circuitry configured to provide a second impedance to the received clock signal. The first impedance and the second impedance may be configured to provide a combined impedance about equal to the clock impedance when the first impedance adjustment circuitry and the second impedance adjustment circuitry are connected to the received clock signal in parallel.

SEMICONDUCTOR DEVICE
20200083663 · 2020-03-12 ·

Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.

Memory devices and systems with parallel impedance adjustment circuitry and methods for operating the same
10565151 · 2020-02-18 · ·

Methods, systems, and apparatuses related to memory operation with common clock signals are provided. A memory device or system that includes one or more memory devices may be operable with a common clock signal without a delay from switching on-die termination on or off. For example, a memory device may comprise first impedance adjustment circuitry configured to provide a first impedance to a received clock signal having a clock impedance and second impedance adjustment circuitry configured to provide a second impedance to the received clock signal. The first impedance and the second impedance may be configured to provide a combined impedance about equal to the clock impedance when the first impedance adjustment circuitry and the second impedance adjustment circuitry are connected to the received clock signal in parallel.