A disclosed circuit arrangement includes a substrate having first bond pads coupled to a pattern of conductors. The first bond pads and the pattern of conductors are disposed on a first surface of the substrate. A first layer of adhesive is directly disposed on the first surface of the substrate and the pattern of conductors and has openings at the first bond pads. An electronic device has opposing first and second surfaces and is attached to the first surface of the substrate by the first surface of the electronic device in contact with the first layer of adhesive. The second surface of the electronic device has second bond pads. Bond wires are connected at the first bond pads through the openings in the first layer of adhesive and connected at the second bond pads.

A packaging substrate includes a core layer including a glass substrate with a first surface and a second surface facing each other, and a plurality of core vias. The plurality of core vias penetrating through the glass substrate in a thickness direction, each comprising a circular core via having a circular opening part and a non-circular core via having an aspect ratio of 2 to 25 in the x-y direction of an opening part. One or more electric power transmitting elements are disposed on the non-circular core via.

A method of manufacturing a glass substrate that has a through hole, includes (1) forming an initial hole in a glass substrate by irradiating laser light from a first surface side of the glass substrate; (2) performing a first etching process using a first etching solution to form, from the initial hole, a first through hole that extends from a first opening formed at a first surface to a second opening formed at a second surface, and to make a ratio “d.sub.1/R.sub.t1” of a thickness “d.sub.1” of the glass substrate with respect to a diameter “R.sub.t1” of the first opening to be within a range between 10 to 20; and (3) performing a second etching process to enlarge the first through hole using a second etching solution, whose etching rate with respect to the glass substrate is faster than that of the first etching solution.

A wafer-level manufacturing method for embedding a passive element in a glass substrate is disclosed. A highly doped silicon wafer is dry etched to form a highly doped silicon mould wafer, containing highly doped silicon passive component structures mould seated in cavity arrays; a glass wafer is anodically bonded to the highly doped silicon mould wafer in vacuum pressure to seal the cavity arrays; the bonded wafers are heated so that the glass melts and fills gaps in the cavity arrays, annealing and cooling are performed, and a reflowed wafer is formed; the upper glass substrate of the reflowed wafer is grinded and polished to expose the highly doped silicon passives; the passive component structure mould embedded in the glass substrate is fully etched; the blind holes formed in the glass substrates after the passive component structure mould has been etched is filled with copper by electroplating; the highly doped silicon substrate and unetched silicon between the cavity arrays are etched, and several glass substrates embedded with a passive element are obtained; to form electrodes for the passives, a metal adhesion layer is deposited, and a metal conductive layer is electroplated. The process is simple, costs are low, and the prepared passive elements have superior performance.

A manufacturing method of a display device includes locating a base member on a support substrate; and removing a part of the support substrate by preventing a first surface portion having a predetermined region in a border plane between the support substrate and the base member from being irradiated with laser light through the support substrate, whereas irradiating a second surface portion, other than the predetermined region, in the border plane between the support substrate and the base member with the laser light through the support substrate.

A ceramic-metal substrate in which the ceramic substrate has a low content of an amorphous phase. The ceramic-metal substrate includes a ceramic substrate and on at least one side of the ceramic substrate a metallization. The ceramic-metal substrate has at least one scribing line, at least one cutting edge, or both at least one scribing line and at least one cutting edge. Amorphous phases extend parallel to the scribing line and/or the cutting edge in a width of at most 100 μm or of at least 0.50 μm.

There are provided a printed circuit board and a method of manufacturing the same. The printed circuit board include a glass plate, an insulating member penetrating through the glass plate, insulating layers disposed on a first surface and a second surface of the glass plate, and a via through the insulating member.

The invention relates to a method of forming a void with a circular cross section in a substrate, more particularly to forming through holes electronic substrates The method comprising the steps of causing a laser cutter to traverse in an arc to an intended circumference of the void, traversing the intended circumference of the void at least once, wherein the lead in from the arc to the circumference comprises a radius.

A wiring substrate is provided with a surface wiring on at least one surface, a through hole which passes through the wiring substrate, and a through wiring which is formed in the through hole and is connected to a surface wiring, in which an inner surface of the through hole is a rough surface, and electric resistance of the through wiring is equal to or less than the electric resistance of the surface wiring.

Pastes are disclosed that are configured to coat a passage of a substrate. When the paste is sintered, the paste becomes electrically conductive so as to transmit electrical signals from a first end of the passage to a second end of the passage that is opposite the first end of the passage. The metallized paste contains a lead-free glass frit, and has a coefficient of thermal expansion sufficiently matched to the substrate so as to avoid cracking of the sintered paste, the substrate, or both, during sintering.