Patent classifications
H05K3/428
HERMETIC METALLIZED VIA WITH IMPROVED RELIABILITY
According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 m at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 m at the second major surface and fully fills the via between the first cavity and the second cavity.
PRINTED CIRCUIT BOARD AND MANUFACTURING METHOD FOR THE SAME
A printed circuit board includes: a first insulating layer; and a heat radiating circuit pattern disposed on a first surface of the first insulating layer and having a pad and a via. The heat radiating circuit pattern includes: a first metal layer disposed on the first insulating layer; a graphite layer disposed on the first metal layer; and a second metal layer disposed on the graphite layer.
CIRCUIT BOARD AND METHOD OF MAKING CIRCUIT BOARD
A circuit board includes a first conductive circuit layer, a cover layer, and a second conductive circuit layer. The cover layer includes an adhesive layer and a base film. The first conductive circuit layer is embedded within the adhesive layer. One side of the first conductive circuit layer is revealed from the adhesive layer. The second conductive circuit layer is located on a side of the base film facing away from the adhesive layer. The cover layer defines a first through hole and a second through hole passing through the cover layer. A diameter of the first through hole is greater than a diameter of the second through hole. The first through hole is filled with a copper post adjacent to the first conductive circuit layer and an electroplating layer adjacent to the second conductive circuit layer. The second through hole is filled with the electroplating layer.
Wiring substrate and method for manufacturing wiring substrate
A wiring substrate includes a first conductor layer, an insulating layer formed on the first conductor layer, a second conductor layer formed on the insulating layer, a connection conductor penetrating through the insulating layer and connecting the first and second conductor layers, and a coating film formed on a surface of the first conductor layer and adhering the first conductor layer and the insulating layer. The first conductor layer includes a conductor pad in contact with the connection conductor such that the conductor pad has a surface having a first region and a second region on second conductor layer side and that surface roughness of the first region is different from surface roughness of the second region, and the conductor pad of the first conductor layer is formed such that the first region is covered by the coating film and that the second region is covered by the connection conductor.
MICROCONTROLLER BOARD FOR THE LEARNING AND PRACTICE OF CODING
Disclosed herein is a microcontroller board for the learning and practice of coding. In the microcontroller board, a platform area (S1) including a platform circuit board (10) in which a microcontroller is provided and module areas (S2) each having a cut line and including a module circuit board (20) are divided and formed on a single board array (S), corresponding header socket holes H are formed in the platform area (S1) including the platform circuit board (10) and the module areas (S2) on both sides of each of the cut lines, a plurality of machine holes (30) is provided along each of the cut lines between the header socket holes (H), via holes (40) are formed by plating the inner circumferential surfaces of the machine holes (30) with metal layers (35) in order to conduct electricity, and V-cut grooves (50) are formed along each of the cut lines.
SUBSTRATE CONNECTING STRUCTURE
A substrate connecting structure includes a substrate that includes a flat base material having a first surface and a second surface at a side opposite to the first surface, a first wiring layer arranged on the first surface, and a second wiring layer arranged on the second surface, a through hole extending through the base material, a connection metal body that includes a connecting portion connected to the second wiring layer and a projection inserted into the through hole, and a mounted component mounted on the substrate. The connection metal body is connected to the mounted component only at a distal end surface of the projection.
Forming through holes through exposed dielectric material of component carrier
A method of manufacturing a component carrier is provided. The method includes forming a through hole between a first main surface and a second main surface of an electrically insulating layer structure by removing material from at least one of the main surfaces of the electrically insulating layer structure, in particular by irradiating at least one of the main surfaces of the electrically insulating layer structure with at least one laser shot, wherein the at least one main surface from which material is removed, in particular which is to be irradiated, is not covered by an electrically conductive layer structure at least in a surface region in which the through hole is to be formed, and subsequently at least partially filling the through hole and at least partially covering the main surfaces of the electrically insulating layer structure by an electrically conductive filling medium.
FORMING CONDUCTIVE VIAS USING A LIGHT GUIDE
The present invention provides a process and a structure of forming conductive vias using a light guide. In an exemplary embodiment, the process includes providing a via in a base material in a direction perpendicular to a plane of the base material, applying a photoresist layer to an interior surface of the via, inserting a light guide into the via, exposing, by the light guide, a portion of the photoresist layer to light, thereby resulting in an exposed portion of the photoresist layer and an unexposed portion of the photoresist layer, removing a portion of the photoresist layer, and plating an area of the via, where the photoresist has been removed, with a metal, thereby resulting in a portion of the via plated with metal and a portion of the via not plated with metal.
Forming conductive vias using a light guide
The present invention provides a process and a structure of forming conductive vias using a light guide. In an exemplary embodiment, the process includes providing a via in a base material in a direction perpendicular to a plane of the base material, applying a photoresist layer to an interior surface of the via, inserting a light guide into the via, exposing, by the light guide, a portion of the photoresist layer to light, thereby resulting in an exposed portion of the photoresist layer and an unexposed portion of the photoresist layer, removing a portion of the photoresist layer, and plating an area of the via, where the photoresist has been removed, with a metal, thereby resulting in a portion of the via plated with metal and a portion of the via not plated with metal.
HERMETIC METALLIZED VIA WITH IMPROVED RELIABILITY
An article includes a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and at least one via extending through the substrate from the first major surface to the second major surface over an axial length in an axial dimension. The article also includes a metal connector disposed within the via that hermetically seals the via. The article has a helium hermeticity of less than or equal to 1.010.sup.8 atm-cc/s after 1000 thermal shock cycles, each of the thermal shock cycle comprises cooling the article to a temperature of 40 C. and heating the article to a temperature of 125 C., and the article has a helium hermeticity of less than or equal to 1.010.sup.8 atm-cc/s after 100 hours of HAST at a temperature of 130 C. and a relative humidity of 85%.