A semiconductor device package includes a lower-density substrate and a higher-density substrate. The higher-density substrate is attached to the lower-density substrate. The higher-density substrate has a first interconnection layer and a second interconnection layer disposed over the first interconnection layer. A thickness of the first interconnection layer is different from a thickness of the second interconnection layer.

An insulated circuit board having a ceramic substrate, a circuit layer on which a circuit pattern is formed and that is bonded to one surface of the ceramic substrate, and a metal layer bonded to the other surface of the ceramic substrate. The circuit layer has a first circuit layer that is bonded to the ceramic substrate and is made of aluminum and a second circuit layer that is bonded to the upper surface of the first circuit layer and is made of copper, the metal layer has a first metal layer that is bonded to the ceramic substrate and is made of aluminum and a second metal layer that is bonded to the upper surface of the first metal layer and is made of copper, and the thicknesses of the first circuit layer and the first metal layer are each 0.2 mm or more and 0.9 mm or less.

A structure for wireless communication having a plurality of conductor layers, an insulator layer separating each of the conductor layers, and at least one connector connecting two of the conductor layers wherein an electrical resistance is reduced when an electrical signal is induced in the resonator at a predetermined frequency. The structure is capable of transmitting or receiving electrical energy and/or data at various near and far field magnetic coupling frequencies.

A stretchable mounting board that includes a stretchable substrate having a main surface, a stretchable wiring disposed on the main surface of the stretchable substrate, a mounting electrode section electrically connected to the stretchable wiring, solder electrically connected to the mounting electrode section and including bismuth and tin, and an electronic component electrically connected to the mounting electrode section with the solder interposed therebetween. The mounting electrode section has a first electrode layer on a side thereof facing the stretchable wiring and which includes bismuth and tin, and a second electrode layer on a side thereof facing the solder and which includes bismuth and tin. A concentration of the bismuth in the first electrode layer is lower than a concentration of the bismuth in the second electrode layer, and the concentration of the bismuth in the second electrode layer is constant along a thickness direction thereof.

Generally, the present disclosure provides example embodiments relating to a printed circuit board (PCB). In an embodiment, a structure includes a PCB including insulating layers with respective metal layers being disposed therebetween. Each of first layers of the insulating layers includes a first fiberglass content. A second layer of the insulating layers has a second fiberglass content less than the first fiberglass content. For example, in some embodiments, the second insulating layer does not include a fiberglass matrix.

An insulated circuit board having a ceramic substrate, a circuit layer on which a circuit pattern is formed and that is bonded to one surface of the ceramic substrate, and a metal layer bonded to the other surface of the ceramic substrate. The circuit layer has a first circuit layer that is bonded to the ceramic substrate and is made of aluminum and a second circuit layer that is bonded to the upper surface of the first circuit layer and is made of copper, the metal layer has a first metal layer that is bonded to the ceramic substrate and is made of aluminum and a second metal layer that is bonded to the upper surface of the first metal layer and is made of copper, and the thicknesses of the first circuit layer and the first metal layer are each 0.2 mm or more and 0.9 mm or less.

A conductor includes (i) a substrate, (ii) a transparent conductive film formed on the substrate and including a silver nanowire, (iii) a metal film formed over the transparent conductive film such that at least a portion thereof overlaps the transparent conductive film, and (iv) a buffer film provided between the transparent conductive film and the metal film, the buffer film having adhesion to each of the transparent conductive film and the metal film, and not impeding conductivity between the transparent conductive film and the metal film. Preferably, the buffer film is formed of an organic material having respective functional groups capable of bonding to the transparent conductive film and the metal film.

A component carrier being less prone to deterioration by oxidation and a method for manufacturing the same are disclosed. The component carrier includes a laminated stack with a first surface finish covering a first part of an exposed surface of the laminated stack and a second surface finish covering a second part of an exposed surface of the laminated stack. The first surface finish and the second surface finish are arranged in direct contact with one another so as to at least partially overlap.

Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a first layer of a package substrate and a conductive trace over the first layer of the package substrate. In an embodiment, the conductive trace comprises a conductive body with a first surface over the first layer of the package substrate, a second surface opposite the first surface, and sidewall surfaces coupling the first surface to the second surface. In an embodiment, the second surface has a first roughness and the sidewall surfaces have a second roughness that is less than the first roughness.

A conductor structure includes a first metal layer, a second metal layer, and a controlling layer. The second metal layer is disposed on the first metal layer. A material of the first metal layer and a material of the second metal layer include at least one identical metal element. The controlling layer is disposed between the first metal layer and the second metal layer. A thickness of the controlling layer is less than a thickness of the first metal layer, and the thickness of the controlling layer is less than a thickness of the second metal layer.