Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

A stretchable wiring board that includes: a stretchable substrate; a first stretchable wiring extending in a length direction on a main surface side of the stretchable substrate; and a second stretchable wiring extending in the length direction on the main surface side of the stretchable substrate, the second stretchable wiring having a first portion with a first region overlapping on top of the first stretchable wiring on an end portion side of the first stretchable wiring, and a width of the first portion of the second stretchable wiring in a width direction orthogonal to the length direction is smaller than a width of the first stretchable wiring.

The present disclosure is directed to a ceramic substrate that includes a plurality of contact pads, a plurality of electrical traces, and a microelectromechanical die. Contacts on the die are coupled to the plurality of contact pads through the plurality of electrical traces. The substrate also includes a plurality of memory bits formed directly on the substrate. Each memory bit is coupled between a first one of the contact pads and a second one of the contact pads.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

A capacitor component includes a body including a structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, reinforcing layers formed on surfaces of the body to which the internal electrodes are exposed to thus cover portions of the internal electrodes, and external electrodes connected to the internal electrodes while covering the internal electrodes and the reinforcing layers.

Some embodiments include a capacitive chip having a plurality of capacitive units. The individual capacitive units include alternating electrode layers and dielectric layers in a capacitor stack. The capacitor stack extends across an undulating topography. The undulating topography has peaks and valleys with the peaks being elevationally offset relative to the valleys by a distance within a range of from about 30 microns to about 100 microns. The capacitor stack includes at least about 10 total layers. Some embodiments include apparatuses and multi-chip modules having capacitor chips.

A material for forming of the capacitor layer which generates no crack in drilling on the dielectric layer of the capacitor in manufacturing of a highly multilayered printed wiring board embedded a capacitor circuit. Copper clad laminate for forming of an embedded capacitor layer of a multilayered printed wiring board including an embedded capacitor circuit having a layer structure of copper layer/dielectric layer of the capacitor/copper layer in an inner layer characterized in that the composite elastic modulus Er of the resin film constituting the dielectric layer of the capacitor along the thickness direction is less than 6.1 GPa is employed.