To provide a fused thiophene molecule having further sufficiently high hole mobility. Disclosed is a fused thiophene molecule that has seven aromatic rings containing three thiophene rings in one molecule and in which the seven aromatic rings have one or two naphthalene structures. And, semiconductor devices including a layer using the fused thiophene molecule are disclosed.

There is provided a compound which provides a semiconductor material. The compound is represented by General Formula (1) ##STR00001## wherein Ar represents an aryl group which may have a substituent or a heteroaryl group which may have a substituent, and R.sup.1 represents an acyclic alkyl group having 1 to 20 carbon atoms wherein hydrogen atom in the alkyl group may be replaced by a halogeno group, a nitrile group or an aryl group, and —CH.sub.2— in the alkyl group may be replaced by —O—, —R′C═CR′—, —CO—, —OCO—, —COO—, —S—, —SO.sub.2—, —SO—, —NH—, —NR′— or —C≡C— provided that, with respect to each of an oxygen atom, a sulfur atom and a nitrogen atom, the same atoms are not directly bonded to each other, wherein R′ represents an acyclic or cyclic alkyl group having 1 to 20 carbon atoms.

The present invention provides compounds of formulae (1) (2) wherein R.sup.1 and R.sup.2 are C.sub.1-30alkyl, C.sub.2-3O-alkenyl, C.sub.2-30-alkynyl, C.sub.5-7-cycloalkyl, C.sub.6-14-aryl or 5 to 14 membered heteroaryl, wherein C.sub.1-30-alkyl, C.sub.2-3O-alkenyl and C.sub.2-3O-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C.sub.1-20-alkyl, O—C.sub.2-20-alkenyl and O—C.sub.2-2O-alkynyl, and wherein C.sub.5-7-cycloalkyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, C.sub.1-20alkyl, C.sub.2-2O-alkenyl, C.sub.2-2O-alkynyl, O—C.sub.1-20-alkyl, O—C.sub.2-2o-alkenyl and O—C.sub.2-2o-alkynyl, R.sup.a, R.sup.b, R.sup.c and R.sup.d are independently and at each occurrence selected from the group consisting of C.sub.1-30alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl, wherein C.sub.1-30-alkyl, C.sub.2-3o-alkenyl and C.sub.2-3o-alkynyl can be substituted with one or more substituents selected from the group consisting of halogen, phenyl, O—C.sub.1-20-alkyl, O—C.sub.2-20-alkenyl and O—C.sub.2-20-alkynyl, and wherein C.sub.5-7-cycloalkyl, C.sub.6-14-aryl and 5 to 14 membered heteroaryl can be substituted with one or more substituents selected from the group consisting of halogen, C.sub.1-20alkyl, C.sub.2-2o-alkenyl, C.sub.2-20-alkynyl, O—C.sub.1-20-alkyl, O—C.sub.2-20-alkenyl and O—C.sub.2-2o-alkynyl, n and o are independently 0, 1, 2, 3, 4 or 5, and m and p are independently 0, 1, 2 or 3, and to electronic device comprising the compounds of formulae 1 or 2. ##STR00001##

An electronic device may include an organic light emitting display (OLED), a heat generating device, and a heat spreading device. The heat generating device may provide heat directly to the heat spreading device, and the heat spreading device is to dissipate the heat from the heat generating device and evenly heat the OLED and lower a driving voltage of the OLED to reduce power consumption of the OLED.

A thin-film transistor and a method for producing a thin-film transistor are provided. The thin-film transistor comprising at least one semiconductor layer, at least one insulator layer, at least one source electrode, at least one drain electrode and at least one gate electrode, which are arranged on a substrate, wherein the at least one source electrode and/or the at least one drain electrode and/or the at least one gate electrode consist(s) of a layer system comprising a first layer composed of molybdenum oxide or tungsten oxide and, deposited thereon, a second layer comprising magnesium.

Disclosed are an interstitially mixed self-assembled monolayer (ImSAM) that can be manufactured very easily by utilizing a novel method of manufacturing supramolecular alloys called “repeated surface exchange of molecules (ReSEM)”, maintain chemical functional groups exposed to the surface of conventional thin films and selectively improve stability without interfering with performance, and a method of manufacturing the same. The interstitially mixed self-assembled monolayers (imSAMs) remarkably enhance electrical stability of molecular-scale electronic devices without deterioration in functions and reliability, withstand a high voltage, and exhibit better stability than a single SAM while maintaining the performance of the prior art, thus being useful for a variety of technical fields using SAMs, especially electronics, organic light-emitting displays (OLEDs), solar cells, sensors, heterogeneous catalysts, frictional electricity, cell growth surfaces, and heat transfer control films.

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

A carbon nanotube composition capable of producing an FET having improved mobility is provided. The carbon nanotube composition of the present invention is a halogen-free carbon nanotube composition comprising a carbon nanotube having the following features (1) and (2).

(1) A dispersion liquid obtained by dispersing the carbon nanotube in a solution containing a cholic acid derivative and water has, in the absorption spectrum in the wavelength range of 300 nm to 1100 nm measured by an ultraviolet/visible/near-infrared spectroscopy, the minimum absorbance in the range of 600 nm to 700 nm and the maximum absorbance in the range of 900 nm to 1050 nm; wherein the ratio of the minimum absorbance and the maximum absorbance is 2.5 or more and 4.5 or less; and
(2) the dispersion liquid has the height ratio of the G-band and the D-band (value of (D/G)×100) of 3.33 or less, as measured by a Raman spectrophotometer, using light having a wavelength of 532 nm as excitation light.

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device. ##STR00001## Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.