The present invention pertains to: a Janus-type triptycene derivative which is capable of forming a self-assembled film which does not depend on the material quality of a substrate; a self-assembled film using said Janus-type triptycene derivative; a structure having said film on a surface thereof; a method for manufacturing said film; and an electronic device using said method.

The present invention relates to organic electronic devices, and more specifically to organic field effect transistors, comprising a dielectric layer that comprises a polycycloolefinic polymer and a diazirine compound.

An organic field effect transistor includes a channel structure defining an active area located between a source and a drain. The channel structure includes a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer. The photoalignment layer is configured to influence an orientation of molecules within the organic semiconductor layer and hence impact the mobility of charge carriers both within the active area and adjacent to the active area.

An object is to provide an organic semiconductor element having excellent carrier mobility and heat resistance of a semiconductor active layer, an organic semiconductor composition for obtaining this element, an organic semiconductor film, and a method of manufacturing an organic semiconductor element in which the composition is used, and another object is to provide a compound and an oligomer or a polymer that are suitably used in the organic semiconductor element, the organic semiconductor composition, the organic semiconductor film, and the method of manufacturing an organic semiconductor element.

The organic semiconductor element of the present invention includes a compound represented by Formula 1 below in a semiconductor active layer. In Formula 1, X represents a chalcogen atom, p and q each independently represent an integer of 0 to 2, and R.sup.1 and R.sup.2 each independently represent a halogen atom or a group represented by Formula W below.

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A semiconductor element includes a substrate, a gate electrode, an active layer, a contact layer, a first electrode, and a second electrode. The gate electrode is disposed on the substrate. The gate insulation layer is disposed on the gate electrode. The active layer is disposed on the gate insulation layer, and includes a first end portion and a second end portion that is opposite the first end portion. The contact layer overlaps the second end portion of the active layer. The first electrode is in contact with the first end portion. The second electrode is spaced apart from the first electrode, and is in contact with the contact layer.

An organic light-emitting diode display is disclosed. In one aspect, the display includes a substrate, a scan line formed over the substrate and configured to provide a scan signal, and a data line crossing the scan line and configured to provide a data voltage. A driving voltage line crosses the scan line and is configured to provide a driving voltage. The display also includes a switching transistor electrically connected to the scan line and the data line and a driving transistor electrically connected to the switching transistor and including a driving gate electrode, a driving source electrode, and a driving drain electrode. The display further includes a storage capacitor including a first storage electrode formed over the driving transistor and the driving gate electrode as a second storage electrode. The second storage electrode overlaps the first storage electrode in the depth dimension and extends from the driving voltage line.

A fused polycyclic heteroaromatic compound represented by Chemical Formula 1, and an organic thin film, an organic thin film transistor, and an electronic device including the fused polycyclic heteroaromatic compound are provided. The fused polycyclic heteroaromatic compound may have a conjugation structure but reinforce planarity among adjacent rings and have further dense packing and thus much increase charge mobility.

Sulfur-fused perylene diimides (PDIs) having the formula 2PDI-nS, wherein n is an integer. Such sulfur-fused PDIs (e.g., 2PDI-2S, 2PDI-3S, and 2PDI-4S) are incorporated as electron acceptors in an active region of a bulk heterojunction solar cell and/or as an electron transport layer. Example solar cells exhibit a power conversion efficiency above 5% and a fill factor above 70% (a record high for non-fullerene bulk heterojunction solar cell devices) when 2PDI-nS is used as the electron acceptor. In addition, the solar cells exhibit low open circuit voltage (V.sub.oc) loss.

The invention relates to a method for manufacturing an electronic device, particularly a device including a flexible and/or low-cost substrate and/or carbon nanotubes, and also relates to electronic devices produced using said method. The method for manufacturing an electronic device, including a substrate mad of a material M and an active semiconductor material layer (3), includes the following steps: a) providing a carrier (10) made of an alkali metal salt or alkaline earth metal salt, preferably sodium chloride (NaCl) or potassium chloride (KCl); optionally, b) depositing a dielectric material layer (2) onto one surface of the carrier; c) forming an active semiconductor material layer (3) on one surface of the carrier when Step b) is not implemented or on the free surface of the layer when Step b) is implemented; d) forming different components of the electronic device on and/or under the layer; e) depositing a protective layer onto the layer stack, obtained in Step d), of the different components of the electronic device, said protective layer being made of the material M required for the substrate (1); and f) removing the carrier (10) by dissolving one or more of the components of said electronic device on a substrate different from the substrate (1). In said removal of the carrier, the method does not include any step for manufacturing one or more of the components of said electronic device on a substrate different from the substrate (1). The invention is of use in the field of electronics in particular.

The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, with the n-type semiconductor material comprising an electron-transporting compound represented by formula (N-1):

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where X, Ar, Ar′, R.sup.1, R.sup.2, m and m′ are as defined herein.