An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure is formed. The fin structure includes a plurality of stacked structures each comprising a dielectric layer, a CNT over the dielectric layer, a support layer over the CNT. A sacrificial gate structure is formed over the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, the support layer is removed from each of the plurality of stacked structures in the source/drain opening, and a source/drain contact layer is formed in the source/drain opening. The source/drain contact is formed such that the source/drain contact is in direct contact with only a part of the CNT and a part of the dielectric layer is disposed between the source/drain contact and the CNT.

A flexible device (1) includes an insulating substrate (2), a source electrode (3), a drain electrode (4), and an extended gate electrode (5) formed on a surface of the insulating substrate (2) at intervals, a channel (6) arranged at an interval between the source electrode (3) and the drain electrode (4), and a gate dielectric (7) formed so as to cover all of the channel (6) and a part of the extended gate electrode (5), in which the insulating substrate (2) is a flexible thin film having light transmissivity, the extended gate electrode (5) is a carbon material thin film having biocompatibility and light transmissivity, the channel (6) is an organic semiconductor thin film, and the gate dielectric (7) is an ionic liquid or an ionic gel.

A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

A thin-film transistor and a method for producing a thin-film transistor are provided. The thin-film transistor comprising at least one semiconductor layer, at least one insulator layer, at least one source electrode, at least one drain electrode and at least one gate electrode, which are arranged on a substrate, wherein the at least one source electrode and/or the at least one drain electrode and/or the at least one gate electrode consist(s) of a layer system comprising a first layer composed of molybdenum oxide or tungsten oxide and, deposited thereon, a second layer comprising magnesium.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

The present disclosure provides an OLED display substrate, a manufacturing method thereof, and a display device, which relates to the field of display technologies. The OLED display substrate includes a light-shielding layer, a buffer layer, an active layer pattern, a gate insulating layer, a gate layer pattern, an interlayer insulating layer, a source-drain layer pattern, an anode, a light-emitting layer, and a cathode which are arranged in turn on a base substrate, wherein the source-drain layer pattern and/or the gate layer pattern are made of a transparent conductive material.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure is formed. The fin structure includes a plurality of stacked structures each comprising a dielectric layer, a CNT over the dielectric layer, a support layer over the CNT. A sacrificial gate structure is formed over the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, the support layer is removed from each of the plurality of stacked structures in the source/drain opening, and a source/drain contact layer is formed in the source/drain opening. The source/drain contact is formed such that the source/drain contact is in direct contact with only a part of the CNT and a part of the dielectric layer is disposed between the source/drain contact and the CNT.