A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Described are concepts, systems, circuits, devices, structures and methods for depositing carbon nanotubes (CNTs) uniformly over a substrate. The described concepts, systems, circuits, devices, structures and methods meet at least several requirements; namely, the systems, circuits, devices, structures are: (1) manufacturable; (2) silicon-CMOS compatible; and (3) provide a path for realizing energy efficiency benefits utilizing silicon. In embodiments, described is an illustrative CNT solution-based deposition technique that addresses all of these requirements. Also described is a method for providing carbon nanotube field effect transistors (CNFETs) using uniform and reproducible fabrication techniques suitable for use across industry-standard wafers and which may use the same equipment currently being used to fabricate silicon product wafers. Also described are CNFETs fabricated within commercial silicon manufacturing facilities and having wafer-scale uniformity and reproducibility across multiple wafers.

The present invention provides a self-healing field-effect transistor (FET) device comprising a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 μm, a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and at least one channel comprising semi-conducting elongated nanostructures. Further provided is a method for fabricating the FET device.

A two-dimensional semiconductor transistor includes a gate electrode, a gate insulating layer disposed on the gate electrode, an organic dopant layer disposed on the gate insulating layer and comprising an organic material including electrons, a two-dimensional semiconductor layer disposed on the organic dopant layer, a source electrode disposed on the two-dimensional semiconductor layer, and a drain electrode disposed on the two-dimensional semiconductor layer and spaced apart from the source electrode. A hysteresis of the two-dimensional semiconductor transistor is reduced due to the two-dimensional semiconductor transistor including the organic dopant layer.

Disclosed are a polymer including at least one structural unit with a moiety represented by Chemical Formula 1, an organic thin film including the polymer, a thin film transistor, and an electronic device. ##STR00001## In Chemical Formula 1, Ar.sup.1 to Ar.sup.3, L.sup.1, L.sup.2, and R.sup.1 to R.sup.6 are the same as described in the detailed description.

A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than −4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device.

##STR00001##

Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.

Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

An organic electrochemical transistor including a source and drain connected by a conductive channel, a gate electrically connected to the conductive channel via an ionically stable layer, and a biological recognition layer in direct contact with the gate. The organic electrochemical transistor can be used to measure the concentration of a biological element in a biological sample. Also, an electronic device including the organic electrochemical transistor.