A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

The invention relates to novel compounds containing one or more units derived from 2,6-disubstituted-[1,5]naphthyridine or 1,6-disubstituted-1H-[1,5]naphthyridine-2-one, to methods for their preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the compounds, mixtures and formulations as organic semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these compounds, mixtures or formulations.

Provided is a compound that is excellent in chemical stability, has a high solubility in a solvent, and exhibits an excellent carrier mobility.

A compound represented by Formula (1):

##STR00001## where in Formula (1), X.sup.1, X.sup.2, X.sup.3, and R.sup.1 to R.sup.10 are as defined in the specification.

There are provided a π-conjugated boron compound, an electronic device containing an organic functional layer including the π-conjugated boron compound, a method for producing a triarylborane, and a method for producing a triarylborane intermediate. In the π-conjugated boron compound, a boron atom is bonded to three aromatic groups via three boron-carbon bonds. Bond distances of the three boron-carbon bonds are all 1.48 Å or less.

A self-healing field-effect transistor (FET) device is disclosed in this application, the self-healing FET has a self-healing substrate, a self-healing dielectric layer, a gate electrode, at least one source electrode, at least one drain electrode, and at least one channel. The self-healing substrate and the self-healing dielectric layer have a disulfide-containing poly(urea-urethane) (PUU) polymer. The self-healing dielectric layer has a thickness of less than about 10 .Math.m. The electrodes have electrically conductive elongated nanostructures. The at least one channel has semi-conducting elongated nanostructures.

An organic field effect transistor includes a channel structure having a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer, where a charge carrier mobility varies along a thickness direction of the channel structure. The channel structure may define an active area between a source and a drain of the transistor and may include alternating layers of at least two photoalignment layers and at least two organic semiconductor layers. Each photoalignment layer is configured to influence an orientation of molecules within an overlying organic semiconductor layer and hence impact the mobility of charge carriers within the device active area while also advantageously decreasing the OFF current of the device.

A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Methods of forming films of aligned carbon nanotubes on a substrate surface are provided. The films are deposited from carbon nanotubes that have been concentrated and confined at a two-dimensional liquid/liquid interface. The liquid/liquid interface is formed by a dispersion of organic material-coated carbon nanotubes that flows over the surface of an immiscible liquid within a flow channel. Within the interface, the carbon nanotubes self-organize via liquid crystal phenomena and globally align along the liquid flow direction. By translating the interface across the substrate, large-area, wafer-scale films of aligned carbon nanotubes can be deposited on the surface of the substrate in a continuous and scalable process.

A method for producing a patterned organic film includes: forming a hydrophobic organic film on a hydrophilic and non-water-soluble first substrate using a coating method, pressing the organic film formed on the first substrate against a convex portion of a stamp having the convex portion and a concave portion, transferring the organic film to the convex portion by applying water or an aqueous solution to an interface between the first substrate and the organic film, and pressing the organic film transferred to the convex portion against a second substrate to transfer the organic film to the second substrate to obtain a patterned organic film, wherein at least one of the organic film and the second substrate is an organic semiconductor.

A semiconductor sensor device for detecting an analyte including a semiconducting layer, one or more organic molecules in the semiconducting layer, and one or more receptor molecules, comprising a poly-cyanostilbene macrocycle, wherein the one or more receptors is embedded within or onto the semiconducting layer of the semiconductor sensor device. Also disclosed is a method of preparing the semiconductor sensor device including a step of coupling the one or more receptor molecules into or onto the semiconducting layer of the semiconductor sensor device, a dielectric surface, or an electrode surface. Also described is chemical sensing device including the semiconductor sensor device and other elements of a sensing device.