A method for forming a nanostructure array and a field effect transistor device on a substrate are provided. The method for forming the nanostructure array includes: providing a template solution comprising template nanostructures; depositing at least one template nanostructure onto the substrate by contacting the template solution with the substrate; and forming on the substrate at least one fixation structure each intersecting with all or a portion of the at least one template nanostructure to fix all or a portion of the at least one template nanostructure on the substrate.

In a method of forming a gate-all-around field effect transistor (GAA FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) are disposed over the bottom support layer. A first support layer is formed over the first group of CNTs and the bottom support layer such that the first group of CNTs are embedded in the first support layer. A second group of carbon nanotubes (CNTs) are disposed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer such that the second group of CNTs are embedded in the second support layer. A fin structure is formed by patterning at least the first support layer and the second support layer.

Polymers comprising at least one unit of formulae ##STR00001## and compounds of the formulae ##STR00002## wherein, in formulae 1, 1′, 2 and 2′ n is 0, 1, 2, 3 or 4 m is 0, 1, 2, 3 or 4 M1 and M2 are independently of each other an aromatic or heteroaromatic monocyclic or bicyclic ring system; X is at each occurrence selected from the group consisting of O, S, Se or Te, Q is at each occurrence selected from the group consisting of C, Si or Ge R is at each occurrence selected from the group consisting of hydrogen, C.sub.1-100-alkyl, C.sub.2-100-alkenyl, C.sub.2-100-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl, a 5 to 20 membered heteroaryl, C(O)—C.sub.1-100-alkyl, C(O)—C.sub.5-12-cycloalkyl and C(O)—OC.sub.1-100-alkyl. R.sup.2, R.sup.2′, R.sup.2″, R* are at each occurrence independently selected from the group consisting of hydrogen, C.sub.1-30-alkyl, C.sub.2-30-alkenyl, C.sub.2-30-alkynyl, C.sub.5-12-cycloalkyl, C.sub.6-18-aryl, 5 to 20 membered heteroaryl, OR.sup.21, OC(O)—R.sup.21, C(O)—OR.sup.21, C(O)—R.sup.21, NR.sup.21R.sup.22, NR.sup.21—C(O)R.sup.22, C(O)—NR.sup.21R.sup.22, N[C(O)R.sup.21][C(O)R.sup.22], SR.sup.21, halogen, CN, SiR.sup.SisR.sup.SitR.sup.Siu and OH, L.sup.1 and L.sup.2 are independently from each other and at each occurrence selected from the group consisting of C.sub.6-30-arylene, 5 to 30 membered heteroarylene, ##STR00003##

The present invention provides a high-performance, highly homogeneous, highly stable electronic device by forming an extremely uniform interface between an insulator and an organic semiconductor, as well as an electronic apparatus using the same. The present invention relates to an electronic device which contains, as a component, an organic thin film in which a geometric two-dimensional arrangement is formed regularly by interdigitating skeletal structures of a positive three-pronged shape of triptycene and by adding a first molecule extending out of one plane of a two-dimensional molecular structure of the triptycene skeletal structure. The invention also relates to an electronic apparatus and the like which contains the electronic device in the interior of the electronic apparatus.

A polymer containing at least one unit of formula

##STR00001##

is prepared by treating a compound of formula

##STR00002##

wherein Y.sup.2 is I, Br, Cl or O—S(O).sub.2CF.sub.3,
with an S-donor agent, in order to obtain the compound of formula

##STR00003##

wherein Y.sup.2 is as defined for the compound of formula (5).

A memory device includes a gate electrode, a gate insulating layer formed on the gate electrode, a tunneling insulating layer stacked on the gate insulating layer, a channel layer stacked on the tunneling insulating layer, and a source electrode and a drain electrode formed on the channel layer to be spaced apart from each other. The tunneling insulating layer suppresses tunneling of charges from any one of the channel layer and the gate electrode by a voltage applied to each of the gate electrode and the drain electrode, and a density of tunneled charges is set according to the voltage applied to the drain electrode to output and store multiple current levels.

A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.

The present invention relates to new semiconductor materials prepared from perylene-based compounds. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

A bioFET cell for measuring a time dependent characteristic of an analyte bearing fluid includes a source, a drain, a semiconductive single wall carbon nanotube network layer extending between the source and drain electrodes and electrically coupled there between, a gate insulatively spaced from and disposed over and extending between the source and drain electrodes, a layer of at least one selected antibody disposed on and linked to the polymer layer to functionalize the semiconductive single wall carbon nanotube network layer to a selected target biomarker corresponding to the at least one selected antibody so that electron transport into the semiconductive single wall carbon nanotube network layer is facilitated, where the source, drain and gate electrodes with the carbon nanotube network layer form a defined channel through which the analyte bearing fluid may flow, and a high impedance source follower amplifier coupled to the source electrode.

A method for producing an organic electronic component and an organic electronic component are disclosed. In an embodiment the component comprises at least one organic electronic layer having a matrix, wherein the matrix contains a metal complex as a dopant, wherein the metal complex comprises at least one metal atom M and at least one ligand L bonded to the metal atom M.