A semiconductor device includes a first conductive pattern at an upper portion of a first insulating interlayer on a first substrate, a first plurality of conductive nanotubes (CNTs) extending vertically, a second conductive pattern at a lower portion of a second insulating interlayer beneath a second substrate, and a second plurality of CNTs extending vertically. A lower surface of the second insulating interlayer contacts an upper surface of the first insulating interlayer. At least a portion of a sidewall of each of the first plurality of CNTs is covered by the first conductive pattern, and at least a portion of a sidewall of each of the second plurality of CNTs is covered by the second conductive pattern. The first and second conductive patterns vertically face each other, and at least one of the first plurality of CNTs and at least one of the second plurality of CNTs contact each other.

The present invention provides a light-transmitting electrode which has high electrical conductivity and high electron blocking performance. The present invention also provides a solar cell which is capable of achieving high energy conversion efficiency at low cost. The present invention provides a method for producing a light-transmitting electrode that has a light-transmitting substrate, a carbon nanotube film which is formed directly or indirectly on the light-transmitting substrate, and a metal oxide film which is formed directly on the carbon nanotube film. This production method includes vapor depositing the metal oxide film, which contains oxygen and a metal element belonging to the group 4, 5 or 6 of the periodic table, on one surface or both surfaces of the carbon nanotube film. The present invention provides a light-transmitting electrode which includes a light-transmitting substrate and a conductive carbon nanotube film that is formed directly or indirectly on the light-transmitting substrate.

Disclosed is a building blocks method for low-cost fabrication of single crystal organometallic perovskite materials with pseudo crystallized hole transporting material layer. This method uses self-assembled molecular monolayers SAM as building blocks. This approach enables creation of defect-free perovskite crystals with desired morphology and crystallinity in a controlled way. Additionally, the crosslinked molecular layers SAM play a role of hole transporting materials HTM and encapsulation against diffusion of metal atoms and gas molecules, thus enhancing the stability of the perovskite materials. This method is cost effective and can be scaled up.

The present invention provides a light-transmitting electrode which has high electrical conductivity and high electron blocking performance. The present invention also provides a solar cell which is capable of achieving high energy conversion efficiency at low cost. The present invention provides a method for producing a light-transmitting electrode that has a light-transmitting substrate, a carbon nanotube film which is formed directly or indirectly on the light-transmitting substrate, and a metal oxide film which is formed directly on the carbon nanotube film. This production method includes vapor depositing the metal oxide film, which contains oxygen and a metal element belonging to the group 4, 5 or 6 of the periodic table, on one surface or both surfaces of the carbon nanotube film. The present invention provides a light-transmitting electrode which includes a light-transmitting substrate and a conductive carbon nanotube film that is formed directly or indirectly on the light-transmitting substrate.

A method of fabricating a composite conductive film is provided. The method includes providing, as a matrix, a layer of photoresist material. The method further includes introducing a plurality of inorganic particles upon a surface of the layer of photoresist material. The method further includes, without patterning the layer of photoresist material, embedding at least some of the plurality of inorganic particles into the layer of photoresist material to form an inorganic mesh within the layer of photoresist material, thereby forming the composite conductive film. Embedding at least some of the plurality of inorganic particles into the layer of photoresist material results in the composite conductive film being patternable and substantially transparent to optical light.

A light detector includes a semiconductor element, a first electrode, a second electrode and a current detecting element electrically connected with each other to form a circuit. The semiconductor element includes a semiconductor structure, a carbon nanotube and a transparent conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. The carbon nanotube is located on the first surface of the semiconductor. The transparent conductive film is located on the second surface of the semiconductor. The transparent conductive film is formed on the second surface by a depositing method or a coating method.

A method of forming a memory device includes the following steps. A plurality of carbon nanotubes are formed over a substrate as a first electrode. An insulating layer is formed over the carbon nanotubes. A graphene is formed over the insulating layer as a second electrode separated from the first electrode by the insulating layer.

A method of fabricating a composite conductive film is provided. The method includes providing, as a matrix, a layer of cross-linkable polymer while the cross-linkable polymer is in a substantially noncross-linked state. The method further includes introducing a plurality of inorganic nanowires onto a surface of the layer of cross-linkable polymer and embedding at least some of the plurality of inorganic nanowires into the layer of cross-linkable polymer to form an inorganic mesh within the layer of cross-linkable polymer, thereby forming the composite conductive film. The method further includes cross-linking the cross-linkable polymer within at least a surface portion of the composite conductive film, wherein following the cross-linking, the cross-linkable polymer within at least the surface portion of the composite conductive film is in a cross-linked state.

According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.

A method of making a photodetector includes: providing a substrate and forming an interdigital electrode layer on a surface of the substrate; and forming a photoactive layer on a surface of the interdigital electrode layer.